Abstract: Semiconductor devices and methods of forming the same are provided. In some embodiments, a method includes receiving a workpiece having a redistribution layer disposed over and electrically coupled to an interconnect structure. In some embodiments, the method further includes patterning the redistribution layer to form a recess between and separating a first conductive feature and a second conductive feature of the redistribution layer, where corners of the first conductive feature and the second conductive feature are defined adjacent to and on either side of the recess. The method further includes depositing a first dielectric layer over the first conductive feature, the second conductive feature, and within the recess. The method further includes depositing a nitride layer over the first dielectric layer. In some examples, the method further includes removing portions of the nitride layer disposed over the corners of the first conductive feature and the second conductive feature.

Abstract: A method includes placing a polisher head on platen, the polisher head including a set of first magnets, and controlling a set of second magnets to rotate the polisher head on the platen, wherein controlling the set of second magnets includes reversing the polarity of at least one second magnet of the set of second magnets to produce a magnetic force on at least one first magnet of the set of first magnets, wherein the set of second magnets are external to the polisher head.

Abstract: A method of forming a semiconductor device includes forming a first interconnect structure over a carrier; forming a thermal dissipation block over the carrier; forming metal posts over the first interconnect structure; attaching a first integrated circuit die over the first interconnect structure and the thermal dissipation block; removing the carrier; attaching a semiconductor package to the first interconnect structure and the thermal dissipation block using first electrical connectors and thermal dissipation connectors; and forming external electrical connectors, the external electrical connectors being configured to transmit each external electrical connection into the semiconductor device, the thermal dissipation block being electrically isolated from each external electrical connection.

Abstract: A Totem Pole PFC circuit includes at least one fast-switching leg, a slow-switching leg, and a control unit. Each fast-switching leg includes a fast-switching upper switch and a fast-switching lower switch. The slow-switching leg is coupled in parallel to the at least one fast-switching leg, and the slow-switching leg includes a slow-switching upper switch and a slow-switching lower switch. The control unit receives an AC voltage with a phase angle, and the control unit includes a current detection loop, a voltage detection loop, and a control loop. The control loop generates a second control signal assembly to respectively control the slow-switching upper switch and the slow-switching lower switch. The control loop controls the second control signal assembly to follow the phase angle, and dynamically adjusts a duty cycle of the second control signal assembly to turn on or turn off the slow-switching upper switch and the slow-switching lower switch.

Abstract: A foldable electronic apparatus is provided and includes a base unit and a display unit. The display unit includes a main panel body having a first side and a bottom side substantially perpendicular to each other, and the bottom side is connected to the base unit; a first folding module disposed on the first side; a first side panel body disposed on the first folding module, and the first side panel body is able to transform between a first unfolded state and a first folded state relative to the main panel body with the first folding module as an axis; and a flexible screen disposed on the main panel body, the first folding module and the first side panel body, and the flexible screen includes a first bendable area corresponding to the first folding module.

Abstract: A flexible screen comprises a multi-layer display structure and a covering structure. The multi-layer display structure includes an outer surface and an inner surface opposite to the outer surface, and the inner surface faces towards the foldable electronic device. The covering structure is disposed on the outer surface of the multi-layer display structure and includes a substrate layer and a plurality of nano-protrusions. The nano-protrusions are formed in array on at least one side of the substrate layer. The flexible screen can transform between an unfolded state and a folded state, and a bending section is partially formed when the flexible screen is in the folded state. The nano-protrusions located in the bending section can release the stress generated in the bending section when the flexible screen transform between the unfolded state and the folded state.

Abstract: A circuit board is disposed on a substrate and includes a dielectric layer and a circuit layer. The dielectric layer is disposed on the substrate. The circuit layer is embedded in the dielectric layer and has plural traces. Each of the traces has a first top surface and a first bottom surface which are opposite to each other, and the first bottom surface faces toward the substrate. The first top surface is exposed from the dielectric layer, and an area of a vertical projection of the first top surface on the substrate is smaller than an area of a vertical projection of the first bottom surface on the substrate.

Abstract: A circuit board is disposed on a substrate and includes a dielectric layer and a circuit layer. The dielectric layer is disposed on the substrate. The circuit layer is embedded in the dielectric layer and has plural traces. Each of the traces has a first top surface and a first bottom surface which are opposite to each other, and the first bottom surface faces toward the substrate. The first top surface is exposed from the dielectric layer, and an area of a vertical projection of the first top surface on the substrate is smaller than an area of a vertical projection of the first bottom surface on the substrate.

Abstract: A circuit board is disposed on a substrate and includes a dielectric layer and a circuit layer. The dielectric layer is disposed on the substrate. The circuit layer is embedded in the dielectric layer and has plural traces. Each of the traces has a first top surface and a first bottom surface which are opposite to each other, and the first bottom surface faces toward the substrate. The first top surface is exposed from the dielectric layer, and an area of a vertical projection of the first top surface on the substrate is smaller than an area of a vertical projection of the first bottom surface on the substrate.

Abstract: A circuit board is disposed on a substrate and includes a dielectric layer and a circuit layer. The dielectric layer is disposed on the substrate. The circuit layer is embedded in the dielectric layer and has plural traces. Each of the traces has a first top surface and a first bottom surface which are opposite to each other, and the first bottom surface faces toward the substrate. The first top surface is exposed from the dielectric layer, and an area of a vertical projection of the first top surface on the substrate is smaller than an area of a vertical projection of the first bottom surface on the substrate.