Abstract: Methods and semiconductor devices are provided. A method includes determining a location of a polyimide opening (PIO) corresponding to an under-bump metallization (UBM) feature in a die. The die includes a substrate and an interconnect structure over the substrate. The method also includes determining a location of a stacked via structure in the interconnect structure based on the location of the PIO. The method further includes forming, in the interconnect structure, the stacked via structure comprising at most three stacked contact vias at the location of the PIO.

Abstract: A solar cell module includes multiple solar cells connected in series through wiring units. Each solar cell comprises an electrode unit disposed on a photoelectric conversion unit converting solar energy into electrical energy, and including multiple finger electrodes. At least one finger electrode has a first conducting section connected to a bus bar electrode, and a second conducting section disposed on one side of the first conducting section, extending away from the bus bar electrode and having a thickness greater than that of each of the first conducting section and the bus bar electrode.

Abstract: The present invention provides a surface structure of a crystalline silicon solar cell and a manufacturing method thereof. The surface structure of the crystalline silicon solar cell comprises a main body having a front side microstructure and a back side microstructure. A surface morphology of the front side microstructure includes a plurality of cone structures, a surface morphology of the back side microstructure includes a plurality of arc structures, and a surface roughness of the front side microstructure is greater than that of the back side structure.