Patents by Inventor Ching-Hau Hsieh

Ching-Hau Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Cobalt silicide formation method employing wet chemical silicon substrate oxidation
    Patent number: 6849543
    Abstract: A method for forming a cobalt silicide layer employs a sequential treatment of a silicon substrate with a hydrofluoric acid material followed by a wet chemical oxidant material. A cobalt material layer is then formed upon the sequentially treated silicon substrate and the silicon substrate/cobalt material layer laminate is thermally annealed to form a cobalt silicide layer. Use of the wet chemical oxidant material for treating the silicon substrate provides the cobalt silicide layer with enhanced electrical properties.
    Type: Grant
    Filed: October 12, 2002
    Date of Patent: February 1, 2005
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Mei-Yun Wang, Chih-Wei Chang, Shau-Lin Shue, Ching-Hau Hsieh
  • Cobalt silicide formation method employing wet chemical silicon substrate oxidation
    Publication number: 20040087144
    Abstract: A method for forming a cobalt silicide layer employs a sequential treatment of a silicon substrate with a hydrofluoric acid material followed by a wet chemical oxidant material. A cobalt material layer is then formed upon the sequentially treated silicon substrate and the silicon substrate/cobalt material layer laminate is thermally annealed to form a cobalt silicide layer. Use of the wet chemical oxidant material for treating the silicon substrate provides the cobalt silicide layer with enhanced electrical properties.
    Type: Application
    Filed: October 12, 2002
    Publication date: May 6, 2004
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Mei-Yun Wang, Chih-Wei Chang, Shau-Lin Shue, Ching-Hau Hsieh