Abstract: The present disclosure relates to a complex probiotic composition and a method for improving exercise performance of a subject with low intrinsic aerobic exercise capacity. The complex probiotic composition, which includes Lactobacillus rhamnosus GKLC1, Bifidobacterium lactis GKK24 and Clostridium butyricum GKB7, administered to the subject with the low intrinsic aerobic exercise capacity in a continuation period, can effectively reduce serum lactic acid and serum urea nitrogen after aerobic exercise, reduce proportion of offal fat and/or increase liver and muscle glycogen contents, thereby being as an effective ingredient for preparation of various compositions.

Abstract: A method for determining parameters of nanostructures, wherein the method includes steps as follows: Firstly, an X-ray reflection intensity measurement curve of a nanostructure to be tested is obtained by radiating the nanostructure to be tested with X-ray. The X-ray reflection intensity measurement curve is compared with an X-ray reflection intensity standard curve to obtain a comparison result. Subsequently, at least one parameter existing in the nanostructure to be tested is determined according to the comparison result.

Abstract: This disclosure relates to an X-ray reflectometry apparatus and a method for measuring a three-dimensional nanostructure on a flat substrate. The X-ray reflectometry apparatus comprises an X-ray source, an X-ray reflector, a 2-dimensional X-ray detector, and a two-axis moving device. The X-ray source is for emitting X-ray. The X-ray reflector is configured for reflecting the X-ray onto a sample surface. The 2-dimensional X-ray detector is configured to collect a reflecting X-ray signal from the sample surface. The two-axis moving device is configured to control two-axis directions of the 2-dimensional X-ray detector to move on at least one of x-axis and z-axis with a formula concerning an incident angle of the X-ray with respect to the sample surface for collecting the reflecting X-ray signal.

Abstract: Disclosed is a semiconductor device and a method for fabricating such semiconductor device, specifically a High Electron Mobility Transistor (HEMT) with a back barrier layer for blocking electron leakage and improve threshold voltage. In one embodiment, a semiconductor device, includes: a Gallium Nitride (GaN) layer; a front barrier layer over the GaN layer; a source electrode, a drain electrode and a gate electrode formed over the front barrier layer; a 2-Dimensional Electron Gas (2-DEG) in the GaN layer at a first interface between the GaN layer and the front barrier layer; and a back barrier layer in the GaN layer, wherein the back barrier layer comprises Aluminum Nitride (AlN).

Abstract: A semiconductor structure includes a barrier layer over a channel layer, and a doped layer over the barrier layer. A gate electrode is over the doped layer and a doped interface layer is formed between the barrier layer and the doped layer. The doped interface layer includes a dopant and a metal. The metal has a metal concentration that follows a gradient function from a highest metal concentration to a lowest metal concentration.

Abstract: This disclosure relates to an apparatus and methods for applying X-ray reflectometry (XRR) in characterizing three dimensional nanostructures supported on a flat substrate with a miniscule sampling area and a thickness in nanometers. In particular, this disclosure is targeted for addressing the difficulties encountered when XRR is applied to samples with intricate nanostructures along all three directions, e.g. arrays of nanostructured poles or shafts. Convergent X-ray with long wavelength, greater than that from a copper anode of 0.154 nm and less than twice of the characteristic dimensions along the film thickness direction, is preferably used with appropriate collimations on both incident and detection arms to enable the XRR for measurements of samples with limited sample area and scattering volumes. In one embodiment, the incident angle of the long-wavelength focused X-ray is ?24°, and the sample area is ?25 ?m×25 ?m.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The method includes the following steps. A plurality of conductive balls is placed over a circuit substrate, where each of the conductive balls is placed over a contact area of one of a plurality of contact pads that is accessibly revealed by a patterned mask layer. The conductive balls are reflowed to form a plurality of external terminals with varying heights connected to the contact pads of the circuit substrate, where a first external terminal of the external terminals formed in a first region of the circuit substrate and a second external terminal of the external terminals formed in a second region of the circuit substrate are non-coplanar.

Abstract: This disclosure relates to an apparatus and methods for applying X-ray reflectometry (XRR) in characterizing three dimensional nanostructures supported on a flat substrate with a miniscule sampling area and a thickness in nanometers. In particular, this disclosure is targeted for addressing the difficulties encountered when XRR is applied to samples with intricate nanostructures along all three directions, e.g. arrays of nanostructured poles or shafts. Convergent X-ray with long wavelength, greater than that from a copper anode of 0.154 nm and less than twice of the characteristic dimensions along the film thickness direction, is preferably used with appropriate collimations on both incident and detection arms to enable the XRR for measurements of samples with limited sample area and scattering volumes.

Abstract: This disclosure relates to an apparatus and methods for applying X-ray reflectometry (XRR) in characterizing three dimensional nanostructures supported on a flat substrate with a miniscule sampling area and a thickness in nanometers. In particular, this disclosure is targeted for addressing the difficulties encountered when XRR is applied to samples with intricate nanostructures along all three directions, e.g. arrays of nanostructured poles or shafts. Convergent X-ray with long wavelength, greater than that from a copper anode of 0.154 nm and less than twice of the characteristic dimensions along the film thickness direction, is preferably used with appropriate collimations on both incident and detection arms to enable the XRR for measurements of samples with limited sample area and scattering volumes. In one embodiment, the incident angle of the long-wavelength focused X-ray is ?24°, and the sample area is ?25 ?m×25 ?m.

Abstract: The present disclosure relates to a device and a method for measuring a thickness of an ultrathin film on a solid substrate. The thickness of the target ultrathin film is measured from the intensity of the fluorescence converted by the substrate and leaking and tunneling through the target ultrathin film at low detection angle. The fluorescence generated from the substrate has sufficient and stable high intensity, and therefore can provide fluorescence signal strong enough to make the measurement performed rapidly and precisely. The detection angle is small, and therefore the noise ratio is low, and efficiency of thickness measurement according to the method disclosed herein is high. The thickness measurement method can be applied into In-line product measurement without using standard sample, and therefore the thickness of the product can be measured rapidly and efficiently.

Abstract: The present disclosure relates to a device and a method for measuring a thickness of an ultrathin film on a solid substrate. The thickness of the target ultrathin film is measured from the intensity of the fluorescence converted by the substrate and leaking and tunneling through the target ultrathin film at low detection angle. The fluorescence generated from the substrate has sufficient and stable high intensity, and therefore can provide fluorescence signal strong enough to make the measurement performed rapidly and precisely. The detection angle is small, and therefore the noise ratio is low, and efficiency of thickness measurement according to the method disclosed herein is high. The thickness measurement method can be applied into In-line product measurement without using standard sample, and therefore the thickness of the product can be measured rapidly and efficiently.

Abstract: This disclosure relates to an apparatus and methods for applying X-ray reflectometry (XRR) in characterizing three dimensional nanostructures supported on a flat substrate with a miniscule sampling area and a thickness in nanometers. In particular, this disclosure is targeted for addressing the difficulties encountered when XRR is applied to samples with intricate nanostructures along all three directions, e.g. arrays of nanostructured poles or shafts. Convergent X-ray with long wavelength, greater than that from a copper anode of 0.154 nm and less than twice of the characteristic dimensions along the film thickness direction, is preferably used with appropriate collimations on both incident and detection arms to enable the XRR for measurements of samples with limited sample area and scattering volumes.

Abstract: Various examples and techniques pertaining to audio output monitoring for failure detection of warning sound playback are described. In one aspect, audio data, which includes a plurality of bits of a first sound sample and one or more control bits for integrity check, is retrieved from a data storage. The audio data is processed by: (i) performing an integrity check on the first sound sample based on the one or more control bits, and (ii) playing back a first sound using the first sound sample. The first sound can be a warning sound in automobile applications.

Abstract: Various examples and techniques pertaining to audio output monitoring for failure detection of warning sound playback are described. In one aspect, audio data, which includes a plurality of bits of a first sound sample and one or more control bits for integrity check, is retrieved from a data storage. The audio data is processed by: (i) performing an integrity check on the first sound sample based on the one or more control bits, and (ii) playing back a first sound using the first sound sample. The first sound can be a warning sound in automobile applications.

Abstract: What is disclosed is a system and method to use discovery packets, such as in an LLDP message, for determining operational status of a rack system. A network device is connected to the port of a switch. Operational data may be sent or received via a discovery packet to the network device. The operational data may be determined by a management agent on the network device and sent to a management controller via the discovery packet. The operational data may be determined by the management controller and sent to the network device.

Abstract: Various examples and techniques pertaining to audio output monitoring for failure detection of warning sound playback are described. In one aspect, audio data, which includes a plurality of bits of a first sound sample and one or more control bits for integrity check, is retrieved from a data storage. The audio data is processed by: (i) performing an integrity check on the first sound sample based on the one or more control bits, and (ii) playing back a first sound using the first sound sample. The first sound can be a warning sound in automobile applications.

Abstract: Various examples and techniques pertaining to audio output monitoring for failure detection of warning sound playback are described. In one aspect, audio data, which includes a plurality of bits of a first sound sample and one or more control bits for integrity check, is retrieved from a data storage. The audio data is processed by: (i) performing an integrity check on the first sound sample based on the one or more control bits, and (ii) playing back a first sound using the first sound sample. The first sound can be a warning sound in automobile applications.

Abstract: A contactless dual-plane positioning method is disclosed. In this method, an X ray is provided. The X ray passes through a first test piece along a light incident axis. A scattering pattern generated by the X ray passing through the first test piece, and a scatting light intensity corresponding to the scattering pattern are obtained. According to the scattering light intensity, the first test piece is pivoted along a first axis or a second axis until the scattering intensity is greater than or equal to a predetermined intensity. At least three measurement distances between a second test piece and the first test piece are then obtained. According to the measurement distances, an included angle between the second test piece and the light incident axis is adjusted by pivoting the second test piece along a third axis or a fourth axis until the differences between any two measurement distances are less than a predetermined threshold value.

Abstract: What is disclosed is a system and method to use discovery packets, such as in an LLDP message, for determining operational status of a rack system. A network device is connected to the port of a switch. Operational data may be sent or received via a discovery packet to the network device. The operational data may be determined by a management agent on the network device and sent to a management controller via the discovery packet. The operational data may be determined by the management controller and sent to the network device.

Abstract: A contactless dual-plane positioning method is disclosed. In this method, an X ray is provided. The X ray passes through a first test piece along a light incident axis. A scattering pattern generated by the X ray passing through the first test piece, and a scatting light intensity corresponding to the scattering pattern are obtained. According to the scattering light intensity, the first test piece is pivoted along a first axis or a second axis until the scattering intensity is greater than or equal to a predetermined intensity. At least three measurement distances between a second test piece and the first test piece are then obtained. According to the measurement distances, an included angle between the second test piece and the light incident axis is adjusted by pivoting the second test piece along a third axis or a fourth axis until the differences between any two measurement distances are less than a predetermined threshold value.