Abstract: A semiconductor structure and a manufacturing method thereof are provided. The method includes the following steps. A plurality of conductive balls is placed over a circuit substrate, where each of the conductive balls is placed over a contact area of one of a plurality of contact pads that is accessibly revealed by a patterned mask layer. The conductive balls are reflowed to form a plurality of external terminals with varying heights connected to the contact pads of the circuit substrate, where a first external terminal of the external terminals formed in a first region of the circuit substrate and a second external terminal of the external terminals formed in a second region of the circuit substrate are non-coplanar.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The method includes the following steps. A plurality of conductive balls is placed over a circuit substrate, where each of the conductive balls is placed over a contact area of one of a plurality of contact pads that is accessibly revealed by a patterned mask layer. The conductive balls are reflowed to form a plurality of external terminals with varying heights connected to the contact pads of the circuit substrate, where a first external terminal of the external terminals formed in a first region of the circuit substrate and a second external terminal of the external terminals formed in a second region of the circuit substrate are non-coplanar.

Abstract: A semiconductor structure includes a solder resist layer disposed on a circuit substrate and partially covering contact pads of the circuit substrate, and external terminals disposed on the solder resist layer and extending through the solder resist layer to land on the contact pads. The external terminals include a first external terminal and a second external terminal which have different heights. A first interface between the first external terminal and corresponding one of the contact pads underlying the first external terminal is less than a second interface between the second external terminal and another corresponding one of the contact pads underlying the second external terminal.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The method includes the following steps. A plurality of conductive balls is placed over a circuit substrate, where each of the conductive balls is placed over a contact area of one of a plurality of contact pads that is accessibly revealed by a patterned mask layer. The conductive balls are reflowed to form a plurality of external terminals with varying heights connected to the contact pads of the circuit substrate, where a first external terminal of the external terminals formed in a first region of the circuit substrate and a second external terminal of the external terminals formed in a second region of the circuit substrate are non-coplanar.