Patents by Inventor Ching-Ho Hsu

Ching-Ho Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240145379
    Abstract: Methods and semiconductor devices are provided. A method includes determining a location of a polyimide opening (PIO) corresponding to an under-bump metallization (UBM) feature in a die. The die includes a substrate and an interconnect structure over the substrate. The method also includes determining a location of a stacked via structure in the interconnect structure based on the location of the PIO. The method further includes forming, in the interconnect structure, the stacked via structure comprising at most three stacked contact vias at the location of the PIO.
    Type: Application
    Filed: February 23, 2023
    Publication date: May 2, 2024
    Inventors: Yen-Kun Lai, Wei-Hsiang Tu, Ching-Ho Cheng, Cheng-Nan Lin, Chiang-Jui Chu, Chien Hao Hsu, Kuo-Chin Chang, Mirng-Ji Lii
  • Patent number: 11940828
    Abstract: A voltage tracking circuit is provided. The voltage tracking circuit includes first and second P-type transistors and a control circuit. The drain of the first P-type transistor is coupled to a first voltage terminal. The gate and the drain of the second P-type transistor are respectively coupled to the first voltage terminal and a second voltage terminal. The control circuit is coupled to the first and second voltage terminals and generates a control voltage according to the first voltage and the second voltage. The sources of the first and second P-type transistors are coupled to an output terminal of the voltage tracking circuit, and the output voltage is generated at the output terminal. In response to the second voltage being higher than the first voltage, the control circuit generates the control signal to turn off the first P-type transistor.
    Type: Grant
    Filed: August 17, 2022
    Date of Patent: March 26, 2024
    Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
    Inventors: Shao-Chang Huang, Yeh-Ning Jou, Ching-Ho Li, Kai-Chieh Hsu, Chun-Chih Chen, Chien-Wei Wang, Gong-Kai Lin, Li-Fan Chen
  • Publication number: 20220359607
    Abstract: A method of forming a deep trench isolation in a radiation sensing substrate includes: forming a trench in the radiation sensing substrate; forming a corrosion resistive layer in the trench, in which the corrosion resistive layer includes titanium carbon nitride having a chemical formula of TiCxN(2-x), and x is in a range of 0.1 to 0.9; and filling a reflective material in the trench and over the corrosion resistive layer.
    Type: Application
    Filed: July 25, 2022
    Publication date: November 10, 2022
    Inventors: Chi-Ming LU, Chih-Hui HUANG, Jung-Chih TSAO, Yao-Hsiang LIANG, Chih-Chang HUANG, Ching-Ho HSU
  • Patent number: 11404470
    Abstract: A method of forming a deep trench isolation in a radiation sensing substrate includes: forming a trench in the radiation sensing substrate; forming a corrosion resistive layer in the trench, in which the corrosion resistive layer includes titanium carbon nitride having a chemical formula of TiCxN(2-x), and x is in a range of 0.1 to 0.9; and filling a reflective material in the trench and over the corrosion resistive layer.
    Type: Grant
    Filed: December 13, 2019
    Date of Patent: August 2, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chi-Ming Lu, Chih-Hui Huang, Jung-Chih Tsao, Yao-Hsiang Liang, Chih-Chang Huang, Ching-Ho Hsu
  • Publication number: 20200119081
    Abstract: A method of forming a deep trench isolation in a radiation sensing substrate includes: forming a trench in the radiation sensing substrate; forming a corrosion resistive layer in the trench, in which the corrosion resistive layer includes titanium carbon nitride having a chemical formula of TiCxN(2-x), and x is in a range of 0.1 to 0.9; and filling a reflective material in the trench and over the corrosion resistive layer.
    Type: Application
    Filed: December 13, 2019
    Publication date: April 16, 2020
    Inventors: Chi-Ming LU, Chih-Hui HUANG, Jung-Chih TSAO, Yao-Hsiang LIANG, Chih-Chang HUANG, Ching-Ho HSU
  • Patent number: 10510798
    Abstract: A method of forming a deep trench isolation in a radiation sensing substrate includes: forming a trench in the radiation sensing substrate; forming a corrosion resistive layer in the trench, in which the corrosion resistive layer includes titanium carbon nitride having a chemical formula of TiCxN(2-x), and x is in a range of 0.1 to 0.9; and filling a reflective material in the trench and over the corrosion resistive layer.
    Type: Grant
    Filed: October 9, 2018
    Date of Patent: December 17, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chi-Ming Lu, Chih-Hui Huang, Jung-Chih Tsao, Yao-Hsiang Liang, Chih-Chang Huang, Ching-Ho Hsu
  • Publication number: 20190043915
    Abstract: A method of forming a deep trench isolation in a radiation sensing substrate includes: forming a trench in the radiation sensing substrate; forming a corrosion resistive layer in the trench, in which the corrosion resistive layer includes titanium carbon nitride having a chemical formula of TiCxN(2-x), and x is in a range of 0.1 to 0.9; and filling a reflective material in the trench and over the corrosion resistive layer.
    Type: Application
    Filed: October 9, 2018
    Publication date: February 7, 2019
    Inventors: Chi-Ming Lu, Chih-Hui Huang, Jung-Chih Tsao, Yao-Hsiang Liang, Chih-Chang Huang, Ching-Ho Hsu
  • Patent number: 10134801
    Abstract: A method of forming a deep trench isolation in a radiation sensing substrate includes: forming a trench in the radiation sensing substrate; forming a corrosion resistive layer in the trench, in which the corrosion resistive layer includes titanium carbon nitride having a chemical formula of TiCxN(2-x), and x is in a range of 0.1 to 0.9; and filling a reflective material in the trench and over the corrosion resistive layer.
    Type: Grant
    Filed: February 19, 2016
    Date of Patent: November 20, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Chi-Ming Lu, Chih-Hui Huang, Jung-Chih Tsao, Yao-Hsiang Liang, Chih-Chang Huang, Ching-Ho Hsu
  • Publication number: 20170154917
    Abstract: A method of forming a deep trench isolation in a radiation sensing substrate includes: forming a trench in the radiation sensing substrate; forming a corrosion resistive layer in the trench, in which the corrosion resistive layer includes titanium carbon nitride having a chemical formula of TiCxN(2?x), and x is in a range of 0.1 to 0.9; and filling a reflective material in the trench and over the corrosion resistive layer.
    Type: Application
    Filed: February 19, 2016
    Publication date: June 1, 2017
    Inventors: Chi-Ming LU, Chih-Hui HUANG, Jung-Chih TSAO, Yao-Hsiang LIANG, Chih-Chang HUANG, Ching-Ho HSU
  • Publication number: 20020074018
    Abstract: A method of prevention maintenance preventing parts of an etcher from being eroded is disclosed. First, a layer of hydrogen-free chemical compound is formed on surface of the parts of the etcher according to one embodiment of the present invention. Otherwise, the parts of the etcher are immersed into a tank containing hydrogen-free chemical compound according to another embodiment of the present invention. After that, a standard process of prevention maintenance is performed by a cleaning agent.
    Type: Application
    Filed: June 26, 2001
    Publication date: June 20, 2002
    Inventors: Wen-Peng Chiang, Ching-Ho Hsu
  • Patent number: 6131825
    Abstract: A spray paint gun air stabilizing structure comprised in sequence of a connector, a valve, a shouldered tube, a spring and a piston. Wherein, the shouldered tube is provided inside the connector to accommodate the valve. A proper gap exists between the valve and the connector. The spring slips on the hollow piston. One end of the piston and its walls form two stopper walls compromising the inner diameter of the air passage of the spray paint gun while the other end of the piston penetrates through the shouldered tube towards the valve. Whereby, the pre-pressurized air in normal status drives the valve in the connector, then is introduced into the spray paint gun via the gap provided to the inner wall of the valve. If the air is over-pressurized, back-pressure is formed in the air passage to push the piston to compress the spring, the outer end of the piston gets closer to the end surface of the valve to narrow down the gap.
    Type: Grant
    Filed: August 13, 1999
    Date of Patent: October 17, 2000
    Inventor: Ching-ho Hsu
  • Patent number: 5361690
    Abstract: A can crusher for environmental protection is generally composed of a hydraulic pump to drive a piston, upwardly or downwardly. When the piston is driven downwardly, a plate is driven downwardly to crush a can. A groove is formed at an inner bottom portion to drain any residues left in the can to a collecting pan.
    Type: Grant
    Filed: July 13, 1993
    Date of Patent: November 8, 1994
    Inventor: Ching-Ho Hsu
  • Patent number: 5277367
    Abstract: A spray gun pressurized air control system includes an air adjusting knob, a trigger, a trigger seat within a housing, and a control ring. The air adjusting knob comprises a knob at one end having indicia marked thereon, and a hollow shank at the other end to receive a spring therein. An inner end of the spring engages with one end of an enlarged portion of a pin. The other end of the enlarged portion engages with the bottom portion of an L-shaped plate extending downward from one end of the trigger. By adjusting the knob to a predetermined position, pressurized air may be released from a valve controlled by the trigger.
    Type: Grant
    Filed: July 7, 1992
    Date of Patent: January 11, 1994
    Inventor: Ching-Ho Hsu