Patents by Inventor Ching-Ho Yang

Ching-Ho Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7741659
    Abstract: A semiconductor device is provided. An isolation structure is formed in a substrate to define a first and a second active region, and a channel active region therebetween. A field implant region is formed below a portion of the isolation structure around the first, second, and channel active regions. A channel active region includes two first sides defining a channel width. The distance from each first side to a second side of a neighboring field implant region is d1. The shortest distance from a third side of each first or second active region to an extension line of each second side of the field implant region is d2. R=d1/d2, where 0.15?R?0.85. A gate structure covers the channel active region and extends over a portion of the isolation structure. Source/drain doped regions are formed in the first and the second active regions.
    Type: Grant
    Filed: October 25, 2007
    Date of Patent: June 22, 2010
    Assignee: United Microelectronics Corp.
    Inventors: Ching-Ho Yang, Jung-Ching Chen, Shyan-Yhu Wang, Shang-Chi Wu
  • Publication number: 20090108348
    Abstract: A semiconductor device is provided. An isolation structure is formed in a substrate to define a first and a second active region, and a channel active region therebetween. A field implant region is formed below a portion of the isolation structure around the first, second, and channel active regions. A channel active region includes two first sides defining a channel width. The distance from each first side to a second side of a neighboring field implant region is d1. The shortest distance from a third side of each first or second active region to an extension line of each second side of the field implant region is d2. R=d1/d2, where 0.15?R?0.85. A gate structure covers the channel active region and extends over a portion of the isolation structure. Source/drain doped regions are formed in the first and the second active regions.
    Type: Application
    Filed: October 25, 2007
    Publication date: April 30, 2009
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Ching-Ho Yang, Jung-Ching Chen, Shyan-Yhu Wang, Shang-Chi Wu
  • Publication number: 20070171039
    Abstract: An indication device for vehicles is installed to an obvious position of the vehicle such as at rear of the vehicle and includes a first section, a second section and a third section. The indication device is controlled by a controller and each section includes an indication member, such as an arrow which lights up to represent specific information. The three indication members represent three specific information of the speed of the vehicle such as the speed is increased, reduced and below a pre-set value.
    Type: Application
    Filed: January 23, 2006
    Publication date: July 26, 2007
    Inventor: Ching-Ho Yang
  • Publication number: 20060231715
    Abstract: A kettle bracket includes a back plate having a lower end forward bent to form a support for supporting the kettle such that the back plate has an L-shaped structure. The back plate has two ribs formed on two opposite sides of a vertical portion of the L-shaped structure. Two curved straps are respectively secured to the back plate to form a receiving space for contained the kettle. The receiving space is tapered relative to the support for user to conveniently insert the kettle into the receiving space and clamping a lower portion of the kettle. The two curved straps are intersected relative to each other.
    Type: Application
    Filed: April 13, 2005
    Publication date: October 19, 2006
    Inventor: Ching-Ho Yang