Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a first device and a second device disposed adjacent to the first device; a conductive pillar disposed adjacent to the first device or the second device; a molding surrounding the first device, the second device and the conductive pillar; and a redistribution layer (RDL) over the first device, the second device, the molding and the conductive pillar, wherein the RDL electrically connects the first device to the second device and includes an opening penetrating the RDL and exposing a sensing area over the first device.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: A conductive-insulator-semiconductor (CIS) device with low flicker noise is provided. In some embodiments, the CIS device comprises a semiconductor substrate, a pair of source/drain regions, a selectively-conductive channel, and a gate electrode. The pair of source/drain regions is in the semiconductor substrate, and the source/drain regions are laterally spaced. The selectively-conductive channel is in the semiconductor substrate, and extends laterally in a first direction, from one of the source/drain regions to another one of the source/drain regions. The gate electrode comprises a pair of peripheral segments and a central segment. The peripheral segments extend laterally in parallel in the first direction. The central segment covers the selectively-conductive channel and extends laterally in a second direction transverse to the first direction, from one of the peripheral segments to another one of the peripheral segments. A method for manufacturing the CIS device is also provided.

Abstract: A conductive-insulator-semiconductor (CIS) device with low flicker noise is provided. In some embodiments, the CIS device comprises a semiconductor substrate, a pair of source/drain regions, a selectively-conductive channel, and a gate electrode. The pair of source/drain regions is in the semiconductor substrate, and the source/drain regions are laterally spaced. The selectively-conductive channel is in the semiconductor substrate, and extends laterally in a first direction, from one of the source/drain regions to another one of the source/drain regions. The gate electrode comprises a pair of peripheral segments and a central segment. The peripheral segments extend laterally in parallel in the first direction. The central segment covers the selectively-conductive channel and extends laterally in a second direction transverse to the first direction, from one of the peripheral segments to another one of the peripheral segments. A method for manufacturing the CIS device is also provided.

Abstract: A liquid crystal display (LCD) is disclosed. The LCD includes: a screen; a pivot seat mounted at the rear surface of the screen; a connection rod; a first hinge chain positioned at the pivot seat and the top end of the connection rod so as to adjust the observation angle of the screen; a seat body; a pivotal section mounted onto the seat body; and a second hinge chain positioned at the pivot seat and the other top end of the connection rod so as to adjust the height of the screen.

Abstract: The present invention relates to a semiconductor device comprising at least one gate located in each of a memory array area and a periphery circuit area of a substrate, respectively, wherein the pattern density in the memory array area is higher than that in the periphery circuit area. The semiconductor device also comprises a barrier layer, which is located in the memory array area and the periphery circuit area, an undoped oxide barrier, which is located on the barrier layer in the periphery circuit area, and a boron-containing silicate glass, which is located on the barrier layer in the memory array area and on the undoped oxide barrier in the periphery circuit area.

Abstract: The present invention provides a method for preventing doped boron in a dielectric layer from diffusing into a substrate. First, at least one gate is formed on a periphery circuit area and a memory array area of a substrate, respectively, wherein the pattern density in the memory array area is higher than that in the periphery circuit area. Then, a barrier layer is formed on the memory array area and the periphery circuit area, and an undoped oxide barrier is formed on the periphery circuit area. Finally, a silicate glass containing boron is deposited on the memory array area and the periphery circuit area.

Abstract: A liquid crystal display includes a display, multiple signal and power connectors; a hinge on the back of the display; a base provided with a combination part connected to the hinge; an opening facing a gap on the front of the display being provided below the combination part; the depth of the gap not less than the distance between the hinge to the bottom of the display for swiveling the display to indicate horizontal status to allow easy visibility of those connectors to facilitate their connection.

Abstract: An LCD structure with excellent heat dissipation efficiency is disclosed. The LCD structure has a display body comprising a front cover framed onto the front side of the display body; a rear cover framed onto the rear side of the display body, and the rear cover is mounted to the front cover to form a cavity to hold circuit board and electronic components, and the rear side surface of the rear cover has a through hole in communication with the cavity; and a rear panel, wherein a plurality of protruded pillars are formed between the edge of one side face of the rear panel and the through hole surrounding on the rear cover, the protruded pillar provide a distance for the rear panel to be mounted beyond the through hole of the rear cover so that a plurality of sideway dissipation holes are formed in between individual protruded pillars to the cavity.