Abstract: A method includes etching a dielectric layer of a substrate to form an opening in the dielectric layer, forming a metal layer extending into the opening, performing an anneal process, so that a bottom portion of the metal layer reacts with a semiconductor region underlying the metal layer to form a source/drain region, performing a plasma treatment process on the substrate using a process gas including hydrogen gas and a nitrogen-containing gas to form a silicon-and-nitrogen-containing layer, and depositing a metallic material on the silicon-and-nitrogen-containing layer.

Abstract: A beta2-microglobulin concentration analyzing method includes: inputting samples that are prepared from spent dialysate and corresponding to sampling time points into a differential mobility analyzing device for analysis to obtain beta2-microglobulin concentrations, multiplying the sampling time points with a dialysate flowrate respectively to obtain spent dialysate volumes, performing fitting on the beta2-microglobulin concentrations to obtain a concentration-spent dialysate volume fitting curve, and performing integration on the concentration-spent dialysate volume fitting curve to generate a total dialyzed weight.

Abstract: A beta2-microglobulin concentration analyzing method includes: preparing a sample with dialysate, and putting the sample into a differential mobility analyzing device for analysis to obtain a beta2-microglobulin concentration. The present invention further provides a beta2-microglobulin concentration analyzing system, which includes: a preparation device and a differential mobility analyzing device, wherein the preparation device is configured to prepare a sample with dialysate, and the differential mobility analyzing device is configured to analyze the sample to obtain a beta2-microglobulin concentration.