Patents by Inventor CHING-HSUN HSU

CHING-HSUN HSU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11913047
    Abstract: A method for producing ?-aminobutyric acid includes cultivating, in a culture medium containing glutamic acid or a salt thereof, a probiotic composition including at least one lactic acid bacterial strain selected from the group consisting of Bifidobacterium breve CCFM1025 which is deposited at the Guangdong Microbial Culture Collection Center under an accession number GDMCC 60386, Lactobacillus acidophilus TYCA06, Lactobacillus plantarum LPL28, and Bifidobacterium longum subsp. infantis BLI-02 which are deposited at the China General Microbiological Culture Collection Center respectively under accession numbers CGMCC 15210, CGMCC 17954, and CGMCC 15212, Lactobacillus salivarius subsp. salicinius AP-32 which is deposited at the China Center for Type Culture Collection under an accession number CCTCC M 2011127, and combinations thereof.
    Type: Grant
    Filed: January 7, 2022
    Date of Patent: February 27, 2024
    Assignee: GLAC BIOTECH CO., LTD.
    Inventors: Hsieh-Hsun Ho, Ching-Wei Chen, Yu-Fen Huang, Chen-Hung Hsu, Wen-Yang Lin, Yi-Wei Kuo, Shin-Yu Tsai
  • Patent number: 11626398
    Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a diode region, and a dummy stripe. The substrate has a first surface. The diode region is in the substrate. The diode region includes a first implant region of a first conductivity type approximate to the first surface, and a second implant region of a second conductivity type approximate to the first surface and surrounded by the first implant region. The dummy stripe is on the first surface and located between the first implant region and the second implant region. A method for manufacturing a semiconductor structure is also provided.
    Type: Grant
    Filed: March 11, 2021
    Date of Patent: April 11, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Ta-Wei Lin, Fu-Hsiung Yang, Ching-Hsun Hsu, Yu-Lun Lu, Li-Hsuan Yeh, Tsung-Chieh Tsai, Kong-Beng Thei
  • Publication number: 20220293590
    Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a diode region, and a dummy stripe. The substrate has a first surface. The diode region is in the substrate. The diode region includes a first implant region of a first conductivity type approximate to the first surface, and a second implant region of a second conductivity type approximate to the first surface and surrounded by the first implant region. The dummy stripe is on the first surface and located between the first implant region and the second implant region. A method for manufacturing a semiconductor structure is also provided.
    Type: Application
    Filed: March 11, 2021
    Publication date: September 15, 2022
    Inventors: TA-WEI LIN, FU-HSIUNG YANG, CHING-HSUN HSU, YU-LUN LU, LI-HSUAN YEH, TSUNG-CHIEH TSAI, KONG-BENG THEI
  • Publication number: 20120063019
    Abstract: A control method is provided to reduce the spring resonance of a voice coil motor when the coil current of the voice coil motor is changed. Each time a total variation for the coil current to be changed is identified and divided into a plurality of step variations applied one by one with a time step equal to one half of the spring resonant period of the voice coil motor. Due to reduction of the spring resonance, the control method speed up the voice coil motor to a steady state. With this control method, a lens focusing system has a shorter focusing time.
    Type: Application
    Filed: September 12, 2011
    Publication date: March 15, 2012
    Applicant: FITIPOWER INTEGRATED TECHNOLOGY INC.
    Inventors: CHING-HSUN HSU, HUNG-AN HUANG