Abstract: An image sensor includes a photoelectric conversion layer, a plurality of deep trench isolations, a first color filter, a first deflector, and a covering layer. The photoelectric conversion layer includes a first photodiode and a second photodiode. The deep trench isolations separate the first photodiode and the second photodiode, in which a pixel dimension is determined by a distance between two adjacent deep trench isolations. The first color filter is disposed on the first photodiode and the second photodiode. The first deflector is disposed on the first color filter. The covering layer covers and surrounds the first deflector. A refractive index of the covering layer is greater than a refractive index of the first deflector, and a difference value between the refractive index of the covering layer and the refractive index of the first deflector is in a range from 0.15 to 0.6.

Abstract: Provided is a package structure including a first redistribution layer (RDL) structure, a die, a circuit substrate, and a first thermoelectric cooler. The RDL) structure has a first side and a second side opposite to each other. The die is disposed on the first side of the first RDL structure. The circuit substrate is bonded to the second side of the first RDL structure through a plurality of first conductive connectors. The first thermoelectric cooler is between the first RDL structure and the circuit substrate, wherein the first thermoelectric cooler includes at least a N-type doped region and at least a P-type doped region.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above- mentioned memory device is also provided.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.

Abstract: The present disclosure provides a light sensing element including a unit. The unit includes a plurality of photodiodes, a color filter disposed above the photodiodes, and a light host embedded in the color filter. The light host is a hollow structure disposed above the photodiodes. The color filter includes a first portion surrounding the light host, a second portion surrounded by the light host, and a third portion covering and physically contacting the first portion, the light host, and the second portion.

Abstract: A solid-state image sensor is provided. The solid-state image sensor includes photoelectric conversion elements and a color filter layer disposed above the photoelectric conversion elements. The color filter layer has a first color filter segment and a second color filter segment adjacent to the first color filter segment. The first color filter segment and the second color filter segment correspond to different colors. The solid-state image sensor further includes a light-splitting structure disposed in the first color filter segment or the second color filter segment and a grid structure disposed between the first color filter segment and the second color filter segment. The light-splitting structure is separated from the grid structure.

Abstract: An electrode structure including a top electrode and a bottom electrode located below the top electrode. The top electrode includes a plurality of inner electrodes and an outer electrode connected with the inner electrodes. The inner electrodes are configured to filter a light by wavelength range and filter the light into a polarized light. The inner electrodes extend along a first direction. Each of the inner electrodes includes a metal structure having a first portion and a second portion and a dielectric structure located between the first portion and the second portion of the metal structure. The first portion, the dielectric structure, and the second portion are arranged along a second direction perpendicular to the first direction.

Abstract: A system for analyzing starts and acceleration phases in squat-style track and field events has: a launching stand, a plurality of wireless cameras, a technical analysis host, two foot tracking devices and a gyro group. The launching stand has at least one acceleration sensor and an adjusting support connected to two pedals. The technical analysis host is connected to the acceleration sensor and the wireless cameras, the acceleration sensor actives the wireless cameras to collect instantaneous speed data of a runner, and the technical analysis host generates a 100 m speed curve L1 of the runner, and the 100 m speed curve L1 includes a continuous reduced acceleration section L2. The two foot tracking devices are installed on two feet of each runner. The gyro group have a first gyro, a second gyro, a third gyro and a fourth gyro.

Abstract: A solid-state image sensor is provided. The solid-state image sensor includes a plurality of photoelectric conversion elements. The solid-state image sensor also includes a first color filter layer disposed above the photoelectric conversion elements and having a plurality of first color filter segments. The solid-state image sensor further includes a second color filter layer disposed adjacent to the first color filter layer and having a plurality of second color filter segments. The solid-state image sensor includes a first grid structure disposed between the first color filter layer and the second color filter layer. The first grid structure has a first grid height. The solid-state image sensor also includes a second grid structure disposed between the first color filter segments and between the second color filter segments. The second grid structure has a second grid height that is lower than or equal to the first grid height.

Abstract: A solid-state image sensor is provided. The solid-state image sensor includes photoelectric conversion elements and a color filter layer disposed above the photoelectric conversion elements. The photoelectric conversion elements and the color filter layer form normal pixels and auto-focus pixels, the color filter layer that correspond to the normal pixels are divided into first color filter segments and second color filter segments, the first color filter segments are disposed on at least one side that is closer to an incident light, and the width of the first color filter segments is greater than the width of the second color filter segments.

Abstract: A solid-state image sensor is provided. The solid-state image sensor includes a semiconductor substrate having photoelectric conversion elements. The solid-state image sensor also includes an isolation structure disposed between the photoelectric conversion elements. The solid-state image sensor further includes a color filter layer disposed above the semiconductor substrate and having color filter segments that correspond to the photoelectric conversion elements. Moreover, the solid-state image sensor includes an organic film disposed above the color filter layer. The solid-state image sensor also includes an upper electrode and a lower electrode respectively disposed on the upper side and the lower side of the organic film. The solid-state image sensor further includes nano-structures disposed on the upper side or the lower side of the organic film.

Abstract: A solid-state image sensor is provided. The solid-state image sensor includes a plurality of photoelectric conversion elements. The solid-state image sensor also includes a color filter layer disposed above the photoelectric conversion elements. The color filter layer has a plurality of color filter segments. The solid-state image sensor further includes a partition grid disposed between the color filter segments. Moreover, the solid-state image sensor includes a patterned structure disposed on the color filter layer. The patterned structure has a plurality of patterned segments. The solid-state image sensor also includes a transparent layer disposed on the color filter layer and the partition grid. The transparent layer surrounds the patterned segments. At least one patterned segment is disposed on the partition grid.

Abstract: A light-emitting module structure includes a substrate, a plurality of light-emitting diodes (LEDs) disposed on the substrate, and a light-guiding layer covering the light-emitting diodes. The light-guiding layer has an upper surface, the upper surface has a plurality of recesses, and the recesses are above the light-emitting diodes or between the light-emitting diodes. This light-emitting module structure can improve the brightness and uniformity of the light-emitting module.

Abstract: A solid-state image sensor is provided. The solid-state image sensor includes a plurality of photoelectric conversion elements. The solid-state image sensor also includes a color filter layer disposed above the photoelectric conversion elements. The color filter layer has a plurality of color filter segments. The solid-state image sensor further includes a partition grid disposed between the color filter segments. Moreover, the solid-state image sensor includes a patterned structure disposed on the color filter layer. The patterned structure has a plurality of patterned segments. The solid-state image sensor also includes a transparent layer disposed on the color filter layer and the partition grid. The transparent layer surrounds the patterned segments. At least one patterned segment is disposed on the partition grid.

Abstract: A solid-state image sensor is provided. The solid-state image sensor includes a plurality of photoelectric conversion elements. The solid-state image sensor also includes a first color filter layer disposed above the photoelectric conversion elements and a second color filter layer disposed adjacent to the first color filter layer, which respectively have a plurality of first color filter segments and a plurality of second color filter segments. Moreover, the solid-state image sensor includes a first metal grid structure disposed between the first color filter layer and the second color filter layer. The solid-state image sensor also includes a second metal grid structure disposed between the first color filter segments and between the second color filter segments. The bottom of the first metal grid structure has a first grid width, and the bottom of the second metal grid structure has a second grid width narrower than the first grid width.

Abstract: A system for analyzing starts and acceleration phases in squat-style track and field events has: a launching stand, a plurality of wireless cameras, a technical analysis host, two foot tracking devices and a gyro group. The launching stand has at least one acceleration sensor and an adjusting support connected to two pedals. The technical analysis host is connected to the acceleration sensor and the wireless cameras, the acceleration sensor actives the wireless cameras to collect instantaneous speed data of a runner, and the technical analysis host generates a 100 m speed curve L1 of the runner, and the 100 m speed curve L1 includes a continuous reduced acceleration section L2. The two foot tracking devices are installed on two feet of each runner. The gyro group have a first gyro, a second gyro, a third gyro and a fourth gyro.

Abstract: A computing system may, in an example, include a first computing device that includes at least one biometric data sensor and a biometric synchronization module on the first computing device to, when executed by a processor, synchronize biometric data from the first computing device to a second computing device in response to a biometric registration request.

Abstract: An electronic device includes a main frame, a support component pivoted to the main frame, a flexible display panel connected between the main frame and the support component, and a display movably connected to the support component. The support component is adapted to be closed to the main frame to fold the flexible display panel between the main frame and the support component, and is adapted to be opened from the main frame to expand the flexible display panel. When the support component is opened, the display is adapted to rotate relative to the support component to a first state such that the display and the flexible display panel are located on the same side of the support component, and to rotate relative to the support component to a second state such that the display and the flexible display panel are located on different sides of the support component.

Abstract: A solid-state image sensor is provided. The solid-state image sensor includes a plurality of photoelectric conversion elements. The solid-state image sensor also includes a first color filter layer disposed above the photoelectric conversion elements and having a plurality of first color filter segments. The solid-state image sensor further includes a second color filter layer disposed adjacent to the first color filter layer and having a plurality of second color filter segments. The solid-state image sensor includes a first grid structure disposed between the first color filter layer and the second color filter layer. The first grid structure has a first grid height. The solid-state image sensor also includes a second grid structure disposed between the first color filter segments and between the second color filter segments. The second grid structure has a second grid height that is lower than or equal to the first grid height.

Abstract: A light-emitting module structure includes a substrate, a plurality of light-emitting diodes (LEDs) disposed on the substrate, and a light-guiding layer covering the light-emitting diodes. The light-guiding layer has an upper surface, the upper surface has a plurality of recesses, and the recesses are above the light-emitting diodes or between the light-emitting diodes. This light-emitting module structure can improve the brightness and uniformity of the light-emitting module.