Abstract: Methods and apparatus for forming a bond pad of a semiconductor device such as a backside illuminated (BSI) image sensor device are disclosed. The substrate of a device may have an opening at the backside, through the substrate reaching the first metal layer at the front side of the device. A buffer layer may be formed above the backside of the substrate and covering sidewalls of the substrate opening. A pad metal layer may be formed above the buffer layer and in contact with the first metal layer at the bottom of the substrate opening. A bond pad may be formed in contact with the pad metal layer. The bond pad is connected to the pad metal layer vertically above the substrate, and further connected to the first metal layer of the device at the opening of the substrate.

Abstract: A method of manufacturing an image sensor includes at least the following steps. A storage node is formed in a substrate. A gate dielectric layer, a storage gate electrode, and a first dielectric layer are sequentially formed over the substrate. A portion of the first dielectric layer is removed to form an opening. A protection layer and a shielding layer are sequentially filled into the opening. The protection layer laterally surrounds the shielding layer and at least a portion of the protection layer is located between the storage gate electrode and the shielding layer. A second dielectric layer is formed over the shielding layer.

Abstract: A pad structure with a contact via array for high bond structure is provided. In some embodiments, a semiconductor substrate comprises a pad opening. An interconnect structure is under the semiconductor substrate, and comprises an interlayer dielectric (ILD) layer, a wiring layer, and the contact via array. The wiring layer and the contact via array are in the ILD layer. Further, the contact via array borders the wiring layer and is between the wiring layer and the semiconductor substrate. A pad covers the contact via array in the pad opening, and protrudes into the ILD layer to contact the wiring layer on opposite sides of the contact via array. A method for manufacturing the pad structure, as well as an image sensor with the pad structure, are also provided.

Abstract: A system for fabricating a semiconductor device includes a first supplier, a second supplier, a mixer, and an applier. The first supplier is configured to supply a developer solution having a first chemical. The second supplier is configured to supply the second chemical to the mixer. The mixer is configured to mix the developer solution with a second chemical, in which the second chemical is configured to form a plurality of bubbles in the developer solution. The applier is configured to apply the developer solution mixed with the bubbles onto a photoresist layer formed on a substrate, in which the photoresist layer has an exposed region, and the first chemical is configured to dissolve the exposed region of the photoresist layer through a chemical reaction.

Abstract: A method of manufacturing an image sensor includes at least the following steps. A storage node is formed in a substrate. A gate dielectric layer, a storage gate electrode, and a first dielectric layer are sequentially formed over the substrate. A portion of the first dielectric layer is removed to form an opening. A protection layer and a shielding layer are sequentially filled into the opening. The protection layer laterally surrounds the shielding layer and at least a portion of the protection layer is located between the storage gate electrode and the shielding layer. A second dielectric layer is formed over the shielding layer.

Abstract: An image sensor includes a photosensitive device, a storage device, and a driving circuit. The storage device is adjacent to the photosensitive device and includes a storage node, a gate dielectric layer, a storage gate electrode, and etch stop layer, a shielding layer, and a protection layer. The gate dielectric layer is over the storage node. The storage gate electrode is over the gate dielectric layer. The etch stop layer covers the gate dielectric layer and the storage gate electrode. The shielding layer is over the storage gate electrode. The protection layer is sandwiched between the etch stop layer and the shielding layer. The driving circuit is adjacent to the storage device.

Abstract: An image sensor includes a photosensitive device, a storage device, and a driving circuit. The storage device is adjacent to the photosensitive device and includes a storage node, a gate dielectric layer, a storage gate electrode, and etch stop layer, a shielding layer, and a protection layer. The gate dielectric layer is over the storage node. The storage gate electrode is over the gate dielectric layer. The etch stop layer covers the gate dielectric layer and the storage gate electrode. The shielding layer is over the storage gate electrode. The protection layer is sandwiched between the etch stop layer and the shielding layer. The driving circuit is adjacent to the storage device.

Abstract: Methods and apparatus for forming a bond pad of a semiconductor device such as a backside illuminated (BSI) image sensor device are disclosed. The substrate of a device may have an opening at the backside, through the substrate reaching the first metal layer at the front side of the device. A buffer layer may be formed above the backside of the substrate and covering sidewalls of the substrate opening. A pad metal layer may be formed above the buffer layer and in contact with the first metal layer at the bottom of the substrate opening. A bond pad may be formed in contact with the pad metal layer. The bond pad is connected to the pad metal layer vertically above the substrate, and further connected to the first metal layer of the device at the opening of the substrate.

Abstract: Methods and apparatus for forming a bond pad of a semiconductor device such as a backside illuminated (BSI) image sensor device are disclosed. The substrate of a device may have an opening at the backside, through the substrate reaching the first metal layer at the front side of the device. A buffer layer may be formed above the backside of the substrate and covering sidewalls of the substrate opening. A pad metal layer may be formed above the buffer layer and in contact with the first metal layer at the bottom of the substrate opening. A bond pad may be formed in contact with the pad metal layer. The bond pad is connected to the pad metal layer vertically above the substrate, and further connected to the first metal layer of the device at the opening of the substrate.

Abstract: A pad structure with a contact via array for high bond structure is provided. In some embodiments, a semiconductor substrate comprises a pad opening. An interconnect structure is under the semiconductor substrate, and comprises an interlayer dielectric (ILD) layer, a wiring layer, and the contact via array. The wiring layer and the contact via array are in the ILD layer. Further, the contact via array borders the wiring layer and is between the wiring layer and the semiconductor substrate. A pad covers the contact via array in the pad opening, and protrudes into the ILD layer to contact the wiring layer on opposite sides of the contact via array. A method for manufacturing the pad structure, as well as an image sensor with the pad structure, are also provided.

Abstract: A pad structure with a contact via array for high bond structure is provided. In some embodiments, a semiconductor substrate comprises a pad opening. An interconnect structure is under the semiconductor substrate, and comprises an interlayer dielectric (ILD) layer, a wiring layer, and the contact via array. The wiring layer and the contact via array are in the ILD layer. Further, the contact via array borders the wiring layer and is between the wiring layer and the semiconductor substrate. A pad covers the contact via array in the pad opening, and protrudes into the ILD layer to contact the wiring layer on opposite sides of the contact via array. A method for manufacturing the pad structure, as well as an image sensor with the pad structure, are also provided.

Abstract: A pad structure with a contact via array for high bond structure is provided. In some embodiments, a semiconductor substrate comprises a pad opening. An interconnect structure is under the semiconductor substrate, and comprises an interlayer dielectric (ILD) layer, a wiring layer, and the contact via array. The wiring layer and the contact via array are in the ILD layer. Further, the contact via array borders the wiring layer and is between the wiring layer and the semiconductor substrate. A pad covers the contact via array in the pad opening, and protrudes into the ILD layer to contact the wiring layer on opposite sides of the contact via array. A method for manufacturing the pad structure, as well as an image sensor with the pad structure, are also provided.

Abstract: A system for fabricating a semiconductor device includes a first supplier, a second supplier, a mixer, and an applier. The first supplier is configured to supply a developer solution having a first chemical. The second supplier is configured to supply the second chemical to the mixer. The mixer is configured to mix the developer solution with a second chemical, in which the second chemical is configured to form a plurality of bubbles in the developer solution. The applier is configured to apply the developer solution mixed with the bubbles onto a photoresist layer formed on a substrate, in which the photoresist layer has an exposed region, and the first chemical is configured to dissolve the exposed region of the photoresist layer through a chemical reaction.

Abstract: The present disclosure provides an image sensor semiconductor device. A semiconductor substrate having a first-type conductivity is provided. A plurality of sensor elements is formed in the semiconductor substrate. An isolation feature is formed between the plurality of sensor elements. An ion implantation process is performed to form a doped region having the first-type conductivity substantially underlying the isolation feature using at least two different implant energy.

Abstract: A backlight module is disclosed, which includes an outer frame having a sidewall and a hole formed on the sidewall, an inner frame disposed inside of the outer frame, and an adhesive device. The inner frame includes a block wall and a support. The block wall has an inner surface, an outer surface, and a breakable section. The outer surface is in contact with the sidewall, and the breakable section is disposed corresponding to the hole. The adhesive device is disposed on the support.

Abstract: This invention provides a display device and a backlight module thereof, wherein the backlight module includes a backplate, a frame body, and a first optical film. The frame body is disposed on the backplate and extending along the inner surface of the sidewall. A concave portion is formed on the frame body and exposes the inner surface of the sidewall. The first optical film has a protrusion portion extending to the concave portion, wherein the frame body extends along the edge of the first optical film. The protrusion portion includes a main body and a shelter portion, wherein the shelter portion bends in opposition to the main body and at least partially shelter a portion of the sidewall exposed by the concave portion.

Abstract: A housing of an electronic device includes a first housing body, a second housing body and a buffer. The first housing body defines an accommodating recess. The second housing body is assembled to the first housing body and adapted to be foldable relative to the first housing body. The buffer is disposed on the second housing body. In a closed position, the second housing body and the first housing body are stacked with each other, the accommodating recess is recessed away from the second housing body, the buffer faces the first housing body, and the buffer substantially overlaps with a fringe of the accommodating recess.

Abstract: Methods and apparatus for forming a bond pad of a semiconductor device such as a backside illuminated (BSI) image sensor device are disclosed. The substrate of a device may have an opening at the backside, through the substrate reaching the first metal layer at the front side of the device. A buffer layer may be formed above the backside of the substrate and covering sidewalls of the substrate opening. A pad metal layer may be formed above the buffer layer and in contact with the first metal layer at the bottom of the substrate opening. A bond pad may be formed in contact with the pad metal layer. The bond pad is connected to the pad metal layer vertically above the substrate, and further connected to the first metal layer of the device at the opening of the substrate.

Abstract: A backlight module is disclosed, which includes an outer frame having a sidewall and a hole formed on the sidewall, an inner frame disposed inside of the outer frame, and an adhesive device. The inner frame includes a block wall and a support. The block wall has an inner surface, an outer surface, and a breakable section. The outer surface is in contact with the sidewall, and the breakable section is disposed corresponding to the hole. The adhesive device is disposed on the support.

Abstract: A display device includes a front casing, a back casing, a backlight module and a display panel. The back casing is connected to the front casing. The backlight module is disposed between the front casing and the back casing. The backlight module includes a bezel fixed on the back casing. The display panel is disposed between the front casing and the back casing and disposed on the backlight module. The display panel includes an optical film. The optical film has a first fixing portion, wherein the first fixing portion is extended out of an edge of the bezel and fixed on the back casing.