Patents by Inventor Ching-Hung Chiu

Ching-Hung Chiu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240172475
    Abstract: The invention discloses an etching solution and a manufacturing method of a display panel. The method includes following steps: providing a first substrate; forming a conductive layer stack including a first sub-layer, a second sub-layer and a third sub-layer, each of the first sub-layer and the second sub-layer includes a transparent conductive material including indium-containing oxide, the third sub-layer is disposed between the first sub-layer and the second sub-layer, and the third sub-layer includes silver or silver alloy; performing an etching process, an etching solution is used to etch the first sub-layer, the second sub-layer and the third sub-layer to form a first patterned sub-layer, a second patterned sub-layer and a third patterned sub-layer, and the etching solution includes 1 to 2.6 wt % of nitric acid, 35 to 45 wt % of acetic acid, 35 to 45 wt % of phosphoric acid and a remaining amount of water.
    Type: Application
    Filed: October 17, 2023
    Publication date: May 23, 2024
    Applicant: HANNSTAR DISPLAY CORPORATION
    Inventors: Li-Fang Chiu, Ching-Chieh Lee, Chien-Hung Wu
  • Patent number: 11955460
    Abstract: In accordance with some embodiments, a package-on-package (PoP) structure includes a first semiconductor package having a first side and a second side opposing the first side, a second semiconductor package having a first side and a second side opposing the first side, and a plurality of inter-package connector coupled between the first side of the first semiconductor package and the first side of the second semiconductor package. The PoP structure further includes a first molding material on the second side of the first semiconductor package. The second side of the second semiconductor package is substantially free of the first molding material.
    Type: Grant
    Filed: October 5, 2020
    Date of Patent: April 9, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Da Tsai, Meng-Tse Chen, Sheng-Feng Weng, Sheng-Hsiang Chiu, Wei-Hung Lin, Ming-Da Cheng, Ching-Hua Hsieh, Chung-Shi Liu
  • Publication number: 20120141358
    Abstract: Disclosed is a method for making nanometer ITO powder. In the method, first and second reactants are added to a solvent to provide a clear metal ion solution. The solvent is an alcohol or an organic solvent. The clear metal ion solution is added to a hydrolysis concentration solution at a desired ratio to provide a first solution. The hydrolysis concentration solution contains a sour catalyst and water. An aging step is taken on the first solution and the hydrolysis concentration solution to provide a second solution. A solvothermal step is executed on the second solution to provide multi-ingredient transparent conductive ITO powder in the order of nanometer. The solvothermal step includes the steps of locating the second solution in a solvothermal device and heating the second solution to a solvothermal temperature for a solvothermal reaction.
    Type: Application
    Filed: December 1, 2010
    Publication date: June 7, 2012
    Applicant: Chung-Shan Institute of Science and Technology, Armaments, Bureau, Ministry of National Defense
    Inventors: Yen-Chung Chen, Hsiou-Jeng Shy, Hsin-Chun Lu, Ching-Hung Chiu, Kai-Wei Wang