Patents by Inventor Ching-Hung Weng

Ching-Hung Weng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Advanced info POP and method of forming thereof
    Patent number: 11955460
    Abstract: In accordance with some embodiments, a package-on-package (PoP) structure includes a first semiconductor package having a first side and a second side opposing the first side, a second semiconductor package having a first side and a second side opposing the first side, and a plurality of inter-package connector coupled between the first side of the first semiconductor package and the first side of the second semiconductor package. The PoP structure further includes a first molding material on the second side of the first semiconductor package. The second side of the second semiconductor package is substantially free of the first molding material.
    Type: Grant
    Filed: October 5, 2020
    Date of Patent: April 9, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Da Tsai, Meng-Tse Chen, Sheng-Feng Weng, Sheng-Hsiang Chiu, Wei-Hung Lin, Ming-Da Cheng, Ching-Hua Hsieh, Chung-Shi Liu
  • N-type polysilicon crystal, manufacturing method thereof, and N-type polysilicon wafer
    Patent number: 10510830
    Abstract: An N-type polysilicon crystal, a manufacturing method thereof, and an N-type polysilicon wafer are provided. The N-type polysilicon crystal has a slope of resistivity and a slope of defect area percentage. When the horizontal axis is referred to solidified fraction and the vertical axis is referred to resistivity presented by a unit of Ohm·cm (?·cm), the slope of resistivity is 0 to ?1.8 at the solidified fraction of 0.25 to 0.8. When the horizontal axis is referred to solidified fraction and the vertical axis is referred to defect area percentage (%), the slope of defect area percentage is less than 2.5 at the solidified fraction of 0.4 to 0.8.
    Type: Grant
    Filed: September 2, 2018
    Date of Patent: December 17, 2019
    Assignee: Sino-American Silicon Products Inc.
    Inventors: Ching-Hung Weng, Cheng-Jui Yang, Yu-Min Yang, Yuan-Hsiao Chang, Bo-Kai Wang, Wen-Huai Yu, Ying-Ru Shih, Sung-Lin Hsu
  • N-TYPE POLYSILICON CRYSTAL, MANUFACTURING METHOD THEREOF, AND N-TYPE POLYSILICON WAFER
    Publication number: 20190096987
    Abstract: An N-type polysilicon crystal, a manufacturing method thereof, and an N-type polysilicon wafer are provided. The N-type polysilicon crystal has a slope of resistivity and a slope of defect area percentage. When the horizontal axis is referred to solidified fraction and the vertical axis is referred to resistivity presented by a unit of Ohm·cm (?·cm), the slope of resistivity is 0 to ?1.8 at the solidified fraction of 0.25 to 0.8. When the horizontal axis is referred to solidified fraction and the vertical axis is referred to defect area percentage (%), the slope of defect area percentage is less than 2.5 at the solidified fraction of 0.4 to 0.8.
    Type: Application
    Filed: September 2, 2018
    Publication date: March 28, 2019
    Applicant: Sino-American Silicon Products Inc.
    Inventors: Ching-Hung Weng, Cheng-Jui Yang, Yu-Min Yang, Yuan-Hsiao Chang, Bo-Kai Wang, Wen-Huai Yu, Ying-Ru Shih, Sung-Lin Hsu