Patents by Inventor Ching-In Wu
Ching-In Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250141422Abstract: A balun includes a first coil, a second coil, a third coil, a fourth coil, and a capacitor. The first coil is coupled between an unbalanced pin and a first ground terminal. The second coil is coupled between the first ground terminal and a second ground terminal. The third coil is coupled between a first balanced pin and a connection point and is inductively coupled to the first coil. The fourth coil is coupled between the connection point and a second balanced pin and is inductively coupled to the second coil. The capacitor is coupled between the connection point and a third ground terminal.Type: ApplicationFiled: June 4, 2024Publication date: May 1, 2025Applicant: REALTEK SEMICONDUCTOR CORP.Inventors: Yi-Ching Wu, Chia-Jun Chang
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Publication number: 20250129247Abstract: A resin composition is provided, which comprises: 100 parts by weight of resin A including vinyl group-containing polyphenylene ether resin or maleimide resin; 5 parts by weight to 15 parts by weight of a compound having a structure represented by Formula (1); and 2 parts by weight to 15 parts by weight of a compound B including a compound having a structure represented by Formula (2), a compound having a structure represented by Formula (3) or a compound having a structure represented by Formula (4). Also, a product made from the aforesaid resin composition is provided, including a resin-coated copper, a laminate or a printed circuit board.Type: ApplicationFiled: December 11, 2023Publication date: April 24, 2025Applicant: ELITE MATERIAL CO., LTD.Inventors: Tse-Hung LIU, Chia-Hung WU, Wu-Ching WU
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Publication number: 20250126807Abstract: A resistive memory structure including a transistor device and a resistive memory device is provided. The transistor device includes a gate. The resistive memory device is electrically connected to the gate of the transistor device.Type: ApplicationFiled: November 1, 2023Publication date: April 17, 2025Applicant: United Microelectronics Corp.Inventor: Ching-In Wu
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Patent number: 12274172Abstract: A piezoelectric actuating apparatus including a frame, a rotatable element, an actuating structure, and a sensing structure is provided. The rotatable element is disposed in an accommodating opening and connected to the frame through a rotating shaft structure. The rotatable element is configured to reciprocatingly swing relative to the frame with an axis of the rotating shaft structure. The actuating structure is elastically coupled to the rotatable element through at least one first elastic component. The sensing structure is elastically coupled to the rotatable element through at least one second elastic component. The actuating structure is deformed by receiving a driving signal, and drives the rotatable element to rotate around the axis through the at least one first elastic component. The rotating rotatable element is linked to the sensing structure through the at least one second elastic component to be correspondingly deformed, and outputs a sensing signal.Type: GrantFiled: October 11, 2022Date of Patent: April 8, 2025Assignee: Coretronic MEMS CorporationInventors: Hao-Chien Cheng, Wei-Leun Fang, Kai-Chih Liang, Ming-Ching Wu
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Publication number: 20250113691Abstract: A white light emitting device with an efficiency of at least 230 lm/W at a blue LED chip input current density from 10 to 60 mA/mm2, preferably in the range from 15 to 40 mA/mm2 and more preferably in the range from 20 to 30 mA/mm2. The device comprises a substrate, at least one string of blue LED chips mounted on the substrate and a phosphor material composition. Said phosphor material composition comprises a narrow band red phosphor which generates light with a peak emission wavelength in a range from 625 nm to 635 nm. The weight percentages of the narrow band red phosphor are between 33 to 49 wt. % for a CCT of from 4000 to 6500K or in an amount of from 60 to 70 wt. % for a CCT of from 2700 to 3500K CCT.Type: ApplicationFiled: July 20, 2022Publication date: April 3, 2025Inventors: TUNG CHING WU, XIAO YE HU, XIURU WANG, SONGHUI CHEN, MO SHEN
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Publication number: 20250084274Abstract: A curable composition includes an epoxy monomer component and an aniline-based hardener. The epoxy monomer component is a first component formed from a first epoxy monomer represented by Formula (I), or a second component including the first epoxy monomer represented by Formula (I) and a second epoxy monomer different from the first epoxy monomer represented by Formula (I), wherein each of the substituents in Formula (I) is given the definitions as set forth in the Specification and Claims. Based on 100 wt % of the epoxy monomer component, an amount of the first epoxy monomer represented by Formula (I) is not smaller than 25 wt % and less than 100 wt % and an amount of the second epoxy monomer is greater than 0% and not greater than 75 wt %. A cured product formed from the curable composition, and a method for encapsulating a semiconductor device using the curable composition are also provided.Type: ApplicationFiled: September 12, 2024Publication date: March 13, 2025Inventors: Yun-Ching WU, Yu-Lin HUANG, Ming-Tsung TSAI, Pei-Nung CHEN, Shu-Wei CHANG, Ming-Tsung HSU
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Patent number: 12249777Abstract: An ultra-wideband antenna device includes a radiation metal body, a first slotted hole, a second slotted hole, a third slotted hole, a fourth slotted hole, a ground point, and a feeding source. The radiation metal body includes a first side edge and a second side edge opposite to each other and a third side edge and a fourth side edge opposite to each other, the first slotted hole extends inward from the first side edge, the second slotted hole extends inward from the second side edge, the third slotted hole extends inward from the third side edge, and the fourth slotted hole extends inward from the fourth side edge. The ground point is located at a middle position of the radiation metal body, and the feeding source is located on the radiation metal body and away from the middle position.Type: GrantFiled: March 10, 2023Date of Patent: March 11, 2025Assignee: ASUSTEK COMPUTER INC.Inventor: Yu-Ching Wu
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Publication number: 20250045894Abstract: An image quality evaluation system includes an image calibration device, an image capturing device, and a processing device. The image calibration device is placed in a scene and used for displaying a calibration pattern. The capturing device captures a first comparison image of the scene and the calibration pattern. The processing device is configured to obtain the first comparison image and a reference image containing the calibration pattern and compare the calibration pattern in the first comparison image and the reference image to generate calibration information. After being calibrated according to the calibration information, the image capturing device captures a second comparison image of the scene and the calibration pattern, and the processing device compares the calibration pattern in the second comparison image and the reference image to generate an image quality evaluation result.Type: ApplicationFiled: July 18, 2024Publication date: February 6, 2025Inventors: CHENG-YUAN CHANG, SHAU-SHENG LO, GUAN-WEN LIN, PO-CHING WU
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Publication number: 20250022394Abstract: A driver circuit is coupled to a control circuit which is configured to control a plurality of pixels. The driver circuit includes a detector circuit and an outputting circuit. The detector circuit is configured to detect whether an error occurs or not. The outputting circuit is configured to output an enable signal to the control circuit. When the error occurs, the enable signal changes from a first level to a second level such that the control circuit stops outputting a plurality of control signals to the plurality of pixels.Type: ApplicationFiled: July 11, 2023Publication date: January 16, 2025Inventors: Ching-Wu TSENG, Wei-Lun SHIH
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Patent number: 12198583Abstract: A driver circuit is coupled to a control circuit which is configured to control a plurality of pixels. The driver circuit includes a detector circuit and an outputting circuit. The detector circuit is configured to detect whether an error occurs or not. The outputting circuit is configured to output an enable signal to the control circuit. When the error occurs, the enable signal changes from a first level to a second level such that the control circuit stops outputting a plurality of control signals to the plurality of pixels.Type: GrantFiled: July 11, 2023Date of Patent: January 14, 2025Assignee: NOVATEK Microelectronics Corp.Inventors: Ching-Wu Tseng, Wei-Lun Shih
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Patent number: 12191274Abstract: A nano-twinned structure on a metallic thin film surface is provided. The nano-twinned structure includes a substrate, an adhesive-lattice-buffer layer over the substrate, and a metallic thin film including Ag, Cu, Au, Pd or Ni over the adhesive-lattice-buffer layer. The bottom region of the metallic thin film has equi-axial coarse grains. The surface region of the metallic thin film contains parallel-arranged high-density twin boundaries (?3+?9) with a pitch from 1 nm to 100 nm. The quantity of the parallel-arranged twin boundaries is 50% to 80% of the total quantity of twin boundaries in the cross-sectional view of the metallic thin film. The parallel-arranged twin boundaries include 30% to 90% [111] crystal orientation. The nano-twinned structure on the metallic thin film surface is formed through a post-deposition ion bombardment on the evaporated metallic thin film surface after the evaporation process.Type: GrantFiled: June 6, 2022Date of Patent: January 7, 2025Assignee: AG MATERIALS TECHNOLOGY CO., LTD.Inventors: Tung-Han Chuang, Po-Ching Wu, Pei-Ing Lee, Hsing-Hua Tsai
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Publication number: 20240421791Abstract: The present invention provides a filter configured to receive an input signal to generate a filtered signal. The filter includes a first component, a first capacitor and a second component. The first component is coupled between the input signal and a first terminal. The first capacitor is coupled between the first terminal and a second terminal. For the second component, a first node of the second component is coupled to the second terminal, and a second node of the second component is used to output the filtered signal. The first component and the second component are inductive components.Type: ApplicationFiled: April 14, 2024Publication date: December 19, 2024Applicant: Realtek Semiconductor Corp.Inventors: Yi-Ching Wu, Chia-Jun Chang
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Publication number: 20240395481Abstract: A keycap includes a keycap main body and multiple metal oxides. The metal oxides are doped in the keycap main body and forms an opaque region and a light-transmitting region in the keycap main body. The light-transmitting region is formed by irradiating a portion of the opaque region with an energy beam. A transmittancy of the light-transmitting region is greater than a transmittancy of the opaque region. A manufacturing method of the keycap is also disclosed.Type: ApplicationFiled: September 26, 2023Publication date: November 28, 2024Applicant: Chicony Electronics Co., Ltd.Inventors: Ching-Wu Yang, Pai-Hsiang Wang
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Publication number: 20240365670Abstract: A piezoelectric actuating apparatus includes a frame having an opening, a rotatable element, first and second actuating elements, a sensing element, transmission elements, a sensing electrode, and a driving electrode. The rotatable element is in the opening, connected to the frame via a rotating shaft structure, and reciprocatingly swings relative to the frame around an axis of the rotating shaft structure as a center. The first actuating element is connected to the rotatable element. The transmission elements are between the first and second actuating elements, and between the first actuating element and the sensing element. The second actuating element and the sensing element are coupled to the rotatable element via the transmission elements. The sensing electrode is on a part of the transmission elements and the sensing element. The driving electrode is on another part of the transmission elements and the first and second actuating elements.Type: ApplicationFiled: April 21, 2024Publication date: October 31, 2024Applicant: Coretronic MEMS CorporationInventors: Hao-Chien Cheng, Kai-Chih Liang, Ming-Ching Wu
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Patent number: 12109317Abstract: Disclosed herein are electrospun fibrous matrix and its production method. The method mainly includes the steps of, mixing a first polymer and a drug to form a first mixture, and sonicating the first mixture until a plurality of microparticles are formed with the drug encapsulated therein; and mixing the plurality of microparticles with a second polymer to form a second mixture, subjecting the second mixture to a wet electrospinning process to form the electrospun fibrous matrix. The thus-produced electrospun fibrous matrix is characterized by having a plurality of first and second fibrils woven together, in which each second fibril has a plurality of drug-encapsulated microparticles independently integrated and disposed along the longitudinal direction of the second fibril. Also disclosed herein is a method for treating a wound of a subject. The method includes applying the present electrospun fibrous matrix to the wound of the subject.Type: GrantFiled: December 28, 2021Date of Patent: October 8, 2024Assignee: NATIONAL CHENG KUNG UNIVERSITYInventors: Ping-Ching Wu, Cheng-Hsin Chuang, Po-Heng Chen, Yu-Yi Chiang
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Patent number: 12020905Abstract: A method of making a semiconductor device includes comparing a thickness profile of a surface of a wafer with a reference value using a control unit. The method further includes transmitting a control signal to an adjustable nozzle based on the comparison of the thickness profile and the reference value. The method further includes rotating the adjustable nozzle about a longitudinal axis of the adjustable nozzle in response to the control signal.Type: GrantFiled: May 9, 2022Date of Patent: June 25, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Wei-Ching Wu, Ding-I Liu, Wen-Long Lee
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Publication number: 20240198318Abstract: A method of hydrogenating carbon dioxide, including contacting carbon dioxide and hydrogen with an iron-based catalyst to form a liquid and a gas. The liquid includes CnH2n, CnH2n+2, or a combination thereof and water, wherein n is 5 to 18. The gas includes CH4, CmH2m, CmH2m+2, or a combination thereof, hydrogen, and carbon dioxide, wherein m is 2 to 9. The iron-based catalyst includes 70 mol % to 97 mol % of porous FeO(OH)x (wherein 1<x<2), and 3 mol % to 30 mol % of alkaline metal compound loaded onto the porous FeO(OH)x.Type: ApplicationFiled: February 5, 2024Publication date: June 20, 2024Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Kuo-Ching WU, Pao-Tsern LIN, Hsi-Yen HSU, Chao-Huang CHEN
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Publication number: 20240178818Abstract: A resistive attenuator and a method for improving linearity of the resistive attenuator are provided. The resistive attenuator includes a first transistor, an attenuation circuit and a compensation circuit, wherein both the first transistor and the attenuation circuit are coupled between an input terminal and an output terminal of the resistive attenuator, and the compensation circuit is coupled to the first transistor. The first transistor is configured to provide a first signal path between the input terminal and the output terminal. The attenuation circuit is configured to provide a second signal path between the input terminal and the output terminal, wherein signal attenuation of the second signal path is greater than signal attenuation of the first signal path. The compensation circuit is configured to compensate nonlinear distortion caused by the first transistor.Type: ApplicationFiled: August 4, 2023Publication date: May 30, 2024Applicant: Realtek Semiconductor Corp.Inventors: Yi-Ching Wu, Chia-Jun Chang
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Publication number: 20240162291Abstract: A transistor with a fin structure and a nanosheet includes a fin structure. A first gate device is disposed on the fin structure. A first source/drain layer is disposed at one side of the first gate device. A first source/drain layer is on the fin structure and extends into the fin structure. A second source/drain layer is disposed at another side of the first gate device. The second source/drain layer is on the fin structure and extends into the fin structure. A nanosheet is disposed above the first gate device, between the first source/drain layer and the second source/drain layer, and contacts the first source/drain layer and the second source/drain layer. A second gate device surrounds the nanosheet.Type: ApplicationFiled: December 7, 2022Publication date: May 16, 2024Applicant: UNITED MICROELECTRONICS CORP.Inventors: Ching-In Wu, Yu-Ming Lin, Cheng-Tung Huang
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Patent number: 11981573Abstract: A method for selectively chemically reducing CO2 to form CO includes providing a catalyst, and contacting H2 and CO2 with the catalyst to chemically reduce CO2 to form CO. The catalyst includes a metal oxide having a chemical formula of FexCoyMn(1-x-y)Oz, in which 0.7?x?0.95, 0.01?y?0.25, and z is an oxidation coordination number.Type: GrantFiled: July 3, 2023Date of Patent: May 14, 2024Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Kuo-Ching Wu, Hsi-Yen Hsu, Chao-Huang Chen, Yuan-Peng Du