Abstract: A resistive memory structure including a transistor device and a resistive memory device is provided. The transistor device includes a gate. The resistive memory device is electrically connected to the gate of the transistor device.

Abstract: A transistor with a fin structure and a nanosheet includes a fin structure. A first gate device is disposed on the fin structure. A first source/drain layer is disposed at one side of the first gate device. A first source/drain layer is on the fin structure and extends into the fin structure. A second source/drain layer is disposed at another side of the first gate device. The second source/drain layer is on the fin structure and extends into the fin structure. A nanosheet is disposed above the first gate device, between the first source/drain layer and the second source/drain layer, and contacts the first source/drain layer and the second source/drain layer. A second gate device surrounds the nanosheet.

Abstract: An iridium complex is disclosed, which has a structure represented by the following formula (I): wherein each of Z1 and Z3 represents an atomic group for forming a nitrogen-containing heteroaryl group or a nitrogen-containing heterocycloalkenyl group; Z2 represents an atomic group for forming an aryl group, a heteroaryl group, a cycloalkenyl group or a heterocycloalkenyl group; Y represents an atomic group for forming a 5-membered nitrogen-containing heterocycloalkenyl group; each of R1, R2, R3 and R4 represents a hydrogen atom or a substituent; m is 1 or 2; a, b and d is 0 or any positive integer; and c is an integer of from 0 to 2.

Abstract: A thin-film solar cell includes a body and a polymer layer. The body includes a first electrode layer, a photoelectric conversion layer, and a second electrode layer, and the polymer layer includes a hardening material and an interface material. The photoelectric conversion layer is disposed between the first electrode layer and the second electrode layer, and the polymer layer surrounds the photoelectric conversion layer, in which the interface material is used for bonding to the hardening material and the photoelectric conversion layer respectively. Therefore, the thin-film solar cell may reduce the Staebler-Wronski Effect generated by the photoelectric conversion layer in the photoelectric conversion procedure. Accordingly, the photoelectric conversion efficiency is improved.

Abstract: An iridium complex is disclosed, which has a structure represented by the following formula (I): wherein each of Z1 and Z3 represents an atomic group for forming a nitrogen-containing heteroaryl group or a nitrogen-containing heterocycloalkenyl group; Z2 represents an atomic group for forming an aryl group, a heteroaryl group, a cycloalkenyl group or a heterocycloalkenyl group; Y represents an atomic group for forming a 5-membered nitrogen-containing heterocycloalkenyl group; each of R1, R2, R3 and R4 represents a hydrogen atom or a substituent; m is 1 or 2; a, b and d is 0 or any positive integer; and c is an integer of from 0 to 2.