Abstract: An integrated circuit package including electrically floating metal lines and a method of forming are provided. The integrated circuit package may include integrated circuit dies, an encapsulant around the integrated circuit dies, a redistribution structure on the encapsulant, a first electrically floating metal line disposed on the redistribution structure, a first electrical component connected to the redistribution structure, and an underfill between the first electrical component and the redistribution structure. A first opening in the underfill may expose a top surface of the first electrically floating metal line.

Abstract: A semiconductor structure includes a functional die, a dummy die, a redistribution structure, a seal ring and an alignment mark. The dummy die is electrically isolated from the functional die. The redistribution structure is disposed over and electrically connected to the functional die. The seal ring is disposed over the dummy die. The alignment mark is between the seal ring and the redistribution structure, wherein the alignment mark is electrically isolated from the dummy die, the redistribution structure and the seal ring. The insulating layer encapsulates the functional die and the dummy die.

Abstract: A high-voltage alternating current (AC) light-emitting diode (LED) structure is provided. The high-voltage AC LED structure includes a circuit substrate and a plurality of high-voltage LED (HV LED) chips. Each one of the HV LED chips includes a first substrate, an adhering layer, first ohmic contact layers, epi-layers, a first insulating layer, at least two first electrically conducting plates, at least two second electrically conducting plates, and a second substrate. The HV LED chips manufactured by a wafer-level process are coupled to the low-cost circuit substrate to produce the downsized high-voltage AC LED structure.

Abstract: A high-luminance ultraviolet (UV) light-emitting diode (LED) nail lamp structure and an LED light source module thereof are provided. The LED nail lamp structure includes a housing and an LED light source module. The LED light source module is provided in the housing and has a plurality of UV LEDs, wherein each UV LED has an LED chip disposed in a concave lamp cup. The LED nail lamp structure features high luminance and good lighting effect.

Abstract: The present invention discloses a LED package structure with transparent electrodes. The electrode layers the semiconductor layers inside the LED chip and the protection layer are all transparent to visible and invisible lights. With the adoption of the present invention, electrodes on the LED package no longer block any part of the light emission from inside the LED.

Abstract: Disclosed are an LED lamp structure driven by double current and a double current driving method thereof. The LED lamp structure driven by double current includes a COB package, a temperature sensor, and a controller. The COB package is provided therein with a blue LED chipset to be driven by a first current and a red LED chipset to be driven by a second current. The temperature sensor detects the working temperature of the red LED chipset, and the controller performs dynamic adjustment on the second current according to the working temperature so as to stabilize the color temperature of the LED lamp structure. Thus, as soon as the LED lamp structure is activated, its color temperature will be stabilized to ensure user comfort, which may otherwise be disturbed by variation of the color temperature.

Abstract: The present invention provides a high-voltage alternating current light-emitting diode (AC LED) structure. The high-voltage AC LED structure includes a circuit substrate and a plurality of AC LED chips. The AC LED chips each include an insulated substrate, an LED set, a first metal layer and a second metal layer. The AC LED chips manufactured by a wafer level process are coupled to the low-cost circuit substrate to produce the downsized high-voltage AC LED structure.

Abstract: A low-light-emitting-angle high-luminance ultraviolet (UV) light-emitting diode (LED) nail lamp structure and an LED light source module thereof are provided. The UV LED nail lamp structure includes a housing and an LED light source module. The LED light source module is provided in the housing and has a plurality of UV LEDs, wherein the light-emitting angle of each UV LED ranges between 25° and 80°. The UV LED nail lamp structure features high luminance and enhanced lighting effect.

Abstract: The present invention provides a high-voltage alternating current light-emitting diode (AC LED) structure. The high-voltage AC LED structure includes a circuit substrate and a plurality of AC LED chips. The AC LED chips each include an insulated substrate, an LED set, a first metal layer and a second metal layer. The AC LED chips manufactured by a wafer level process are coupled to the low-cost circuit substrate to produce the downsized high-voltage AC LED structure.

Abstract: A high-voltage alternating current (AC) light-emitting diode (LED) structure is provided. The high-voltage AC LED structure includes a circuit substrate and a plurality of high-voltage LED (HV LED) chips. Each one of the HV LED chips includes a first substrate, an adhering layer, first ohmic contact layers, epi-layers, a first insulating layer, at least two first electrically conducting plates, at least two second electrically conducting plates, and a second substrate. The HV LED chips manufactured by a wafer-level process are coupled to the low-cost circuit substrate to produce the downsized high-voltage AC LED structure.

Abstract: A high-luminance ultraviolet (UV) light-emitting diode (LED) nail lamp structure and an LED light source module thereof are provided. The LED nail lamp structure includes a housing and an LED light source module. The LED light source module is provided in the housing and has a plurality of UV LEDs, wherein each UV LED has an LED chip disposed in a concave lamp cup. The LED nail lamp structure features high luminance and good lighting effect.

Abstract: A manufacturing method and a structure of a light-emitting diode (LED) chip are disclosed. The method includes the steps of: providing a conductive block; providing an epitaxial block; bonding; removing an epitaxial substrate; making independent LEDs; forming a dielectric layer; and making electrical connection. A first LED, a second LED, and a third LED are formed on the conductive block, wherein the first and second LEDs are electrically connected in series, and the second and third LEDs are electrically connected in parallel. Thus, a basic unit with a flexible design of series- and parallel-connected LEDs can be formed to increase the variety and application of LED chip-based designs.

Abstract: A method for preparing an ion source from nanoparticles is provided. The method includes the steps of: providing nanoparticles, vaporizing the nanoparticles from a solid state to a gaseous state, and ionizing the gas to form the ion source. The ion source is prepared by placing solid nanoparticles in a stainless tube, heating and vaporizing the solid nanoparticles into a gaseous state, and ionizing the gas. The gas can be formed at a lower heating temperature than when solid lumps are used because solid nanoparticles have a lower melting point than solid lumps. Thus, the heating temperature is lowered, and the preparing time of the ion source is shortened. Besides, under the same temperature, an ion source prepared from nanoparticles provides higher vapor pressure and allows a higher implantation dose than when the ion source is prepared from solid lumps, thus expanding the applicability of ion implantation technology.

Abstract: The present invention relates to an alternating current (AC) light emitting diode (LED) structure with overload protection, which comprises an AC LED, a heat dissipating unit and an overload protecting unit. The AC LED is thermally connected with the heat dissipating unit, and the overload protecting unit is connected in series between the AC LED and a power source. Thus, when an overload current is inputted to the AC LED structure, the temperature of the overload protecting unit will rise to disconnect the AC LED from the power source. In this way, an open-circuit status can be produced timely in the AC LED structure to block the power input into the AC LED for purpose of protection against overload.

Abstract: A method for preparing an ion source from nanoparticles is provided. The method includes the steps of: providing nanoparticles, vaporizing the nanoparticles from a solid state to a gaseous state, and ionizing the gas to form the ion source. The ion source is prepared by placing solid nanoparticles in a stainless tube, heating and vaporizing the solid nanoparticles into a gaseous state, and ionizing the gas. The gas can be formed at a lower heating temperature than when solid lumps are used because solid nanoparticles have a lower melting point than solid lumps. Thus, the heating temperature is lowered, and the preparing time of the ion source is shortened. Besides, under the same temperature, an ion source prepared from nanoparticles provides higher vapor pressure and allows a higher implantation dose than when the ion source is prepared from solid lumps, thus expanding the applicability of ion implantation technology.