Patents by Inventor Ching-Ju Chen

Ching-Ju Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250053211
    Abstract: A system comprises a controller, configured to receive at least one thermal control setting and a system temperature, and to perform a first thermal throttling operation according to at least one thermal control instruction; and an application, coupled to the controller, configured to receive the at least one thermal control setting and the system temperature from the controller, and to generate the at least one thermal control instruction according to the at least one thermal control setting and the system temperature.
    Type: Application
    Filed: August 8, 2023
    Publication date: February 13, 2025
    Applicant: MEDIATEK INC.
    Inventors: Hsien-Hsi Hsieh, Ching-Yeh Chen, Yu-Ming Lin, Hsing-Ju Wei
  • Patent number: 12225735
    Abstract: A memory device is provided in various embodiments. The memory device, in those embodiments, has an ovonic threshold switching (OTS) selector comprising multiple layers of OTS materials to achieve a low leakage current and as well as relatively low threshold voltage for the OTS selector. The multiple layers can have at least one layer of low bandgap OTS material and at least one layer of high bandgap OTS material.
    Type: Grant
    Filed: June 7, 2022
    Date of Patent: February 11, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hung-Ju Li, Kuo-Pin Chang, Yu-Wei Ting, Ching-En Chen, Kuo-Ching Huang
  • Patent number: 12211823
    Abstract: A package structure includes first and second dies, an insulation structure, a through via, a dielectric layer and a redistribution layer. The second die electrically bonded to the first die includes a through substrate via. The insulation structure is disposed on the first die and laterally surrounds the second die. The through via penetrates through the insulation structure to electrically connect to the first die. The dielectric layer is disposed on the second die and the insulation structure. The redistribution layer is embedded in the dielectric layer and electrically connected to the through via. The redistribution layer includes a first barrier layer and a conductive layer on the first barrier layer. The through substrate via is electrically connected to the redistribution layer, and the conductive layer is in contact with a conductive post of the through via and separated from the through substrate via by the first barrier layer therebetween.
    Type: Grant
    Filed: May 9, 2022
    Date of Patent: January 28, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsien-Wei Chen, Ching-Jung Yang, Ming-Fa Chen, Sung-Feng Yeh, Ying-Ju Chen
  • Patent number: 12040261
    Abstract: A substrate structure includes a wiring structure, a first bump pad, a second bump pad and a compensation structure. The wiring structure includes a plurality of redistribution layers. The first bump pad and the second bump pad are bonded to and electrically connected to the wiring structure. An amount of redistribution layers disposed under the first bump pad is greater than an amount of redistribution layers disposed under the second bump pad. The compensation structure is disposed under the second bump pad.
    Type: Grant
    Filed: March 29, 2022
    Date of Patent: July 16, 2024
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Syu-Tang Liu, Tsung-Tang Tsai, Huang-Hsien Chang, Ching-Ju Chen
  • Patent number: 11894340
    Abstract: A package structure includes a wiring structure and a first electronic device. The wiring structure includes at least one dielectric layer and at least one circuit layer in contact with the dielectric layer. The first electronic device is electrically connected to the wiring structure, and has a first surface, a second surface and at least one lateral side surface extending between the first surface and the second surface. The first electronic device includes a first active circuit region and a first protrusion portion. The first protrusion portion protrudes from the at least one lateral side surface of the first electronic device. A portion of the first active circuit region is disposed in the first protrusion portion.
    Type: Grant
    Filed: November 15, 2019
    Date of Patent: February 6, 2024
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Syu-Tang Liu, Min Lung Huang, Huang-Hsien Chang, Tsung-Tang Tsai, Ching-Ju Chen
  • Publication number: 20240021540
    Abstract: A package structure includes a wiring structure, a first electronic device, a second electronic device and a reinforcement structure. The wiring structure includes at least one dielectric layer, and at least one circuit layer in contact with the dielectric layer. The at least one circuit layer includes at least one interconnection portion. The first electronic device and the second electronic device are electrically connected to the wiring structure. The second electronic device is electrically connected to the first electronic device through the at least one interconnection portion of the at least one circuit layer. The reinforcement structure is disposed above the at least one interconnection portion of the at least one circuit layer.
    Type: Application
    Filed: August 15, 2023
    Publication date: January 18, 2024
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Syu-Tang LIU, Min Lung HUANG, Huang-Hsien CHANG, Tsung-Tang TSAI, Ching-Ju CHEN
  • Patent number: 11728282
    Abstract: A package structure includes a wiring structure, a first electronic device, a second electronic device and a reinforcement structure. The wiring structure includes at least one dielectric layer, and at least one circuit layer in contact with the dielectric layer. The at least one circuit layer includes at least one interconnection portion. The first electronic device and the second electronic device are electrically connected to the wiring structure. The second electronic device is electrically connected to the first electronic device through the at least one interconnection portion of the at least one circuit layer. The reinforcement structure is disposed above the at least one interconnection portion of the at least one circuit layer.
    Type: Grant
    Filed: October 17, 2019
    Date of Patent: August 15, 2023
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Syu-Tang Liu, Min Lung Huang, Huang-Hsien Chang, Tsung-Tang Tsai, Ching-Ju Chen
  • Patent number: 11608170
    Abstract: A buoy position monitoring method includes a buoy positioning step, an unmanned aerial vehicle receiving step and an unmanned aerial vehicle flying step. In the buoy positioning step, a plurality of buoys are put on a water surface. Each of the buoys is capable of sending a detecting signal. Each of the detecting signals is sent periodically and includes a position dataset of each of the buoys. In the unmanned aerial vehicle receiving step, an unmanned aerial vehicle is disposed on an initial position, and the unmanned aerial vehicle receives the detecting signals. In the unmanned aerial vehicle flying step, when at least one of the buoys is lost, the unmanned aerial vehicle flies to a predetermined position to get contact with the at least one buoy that is lost.
    Type: Grant
    Filed: April 9, 2020
    Date of Patent: March 21, 2023
    Assignee: NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Ching-Ju Chen, Chuan-Yu Chang, Chia-Yan Cheng, Meng-Syue Li, Yueh-Min Huang
  • Publication number: 20230027674
    Abstract: A semiconductor device and method for manufacturing the same are provided. The method includes providing a first substrate. The method also includes forming a first metal layer on the first substrate. The first metal layer includes a first metal material. The method further includes treating a first surface of the first metal layer with a solution including an ion of a second metal material. In addition, the method includes forming a plurality of metal particles including the second metal material on a portion of the first surface of the first metal layer.
    Type: Application
    Filed: September 30, 2022
    Publication date: January 26, 2023
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Jhao-Cheng CHEN, Huang-Hsien CHANG, Wen-Long LU, Shao Hsuan CHUANG, Ching-Ju CHEN, Tse-Chuan CHOU
  • Patent number: 11495557
    Abstract: A semiconductor device and method for manufacturing the same are provided. The method includes providing a first substrate. The method also includes forming a first metal layer on the first substrate. The first metal layer includes a first metal material. The method further includes treating a first surface of the first metal layer with a solution including an ion of a second metal material. In addition, the method includes forming a plurality of metal particles including the second metal material on a portion of the first surface of the first metal layer.
    Type: Grant
    Filed: March 20, 2020
    Date of Patent: November 8, 2022
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Jhao-Cheng Chen, Huang-Hsien Chang, Wen-Long Lu, Shao Hsuan Chuang, Ching-Ju Chen, Tse-Chuan Chou
  • Publication number: 20220223507
    Abstract: A substrate structure includes a wiring structure, a first bump pad, a second bump pad and a compensation structure. The wiring structure includes a plurality of redistribution layers. The first bump pad and the second bump pad are bonded to and electrically connected to the wiring structure. An amount of redistribution layers disposed under the first bump pad is greater than an amount of redistribution layers disposed under the second bump pad. The compensation structure is disposed under the second bump pad.
    Type: Application
    Filed: March 29, 2022
    Publication date: July 14, 2022
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Syu-Tang LIU, Tsung-Tang TSAI, Huang-Hsien CHANG, Ching-Ju CHEN
  • Patent number: 11289411
    Abstract: A substrate structure includes a wiring structure, a first bump pad, a second bump pad and a compensation structure. The wiring structure includes a plurality of redistribution layers. The first bump pad and the second bump pad are bonded to and electrically connected to the wiring structure. An amount of redistribution layers disposed under the first bump pad is greater than an amount of redistribution layers disposed under the second bump pad. The compensation structure is disposed under the second bump pad.
    Type: Grant
    Filed: July 29, 2020
    Date of Patent: March 29, 2022
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Syu-Tang Liu, Tsung-Tang Tsai, Huang-Hsien Chang, Ching-Ju Chen
  • Publication number: 20210296267
    Abstract: A semiconductor device and method for manufacturing the same are provided. The method includes providing a first substrate. The method also includes forming a first metal layer on the first substrate. The first metal layer includes a first metal material. The method further includes treating a first surface of the first metal layer with a solution including an ion of a second metal material. In addition, the method includes forming a plurality of metal particles including the second metal material on a portion of the first surface of the first metal layer.
    Type: Application
    Filed: March 20, 2020
    Publication date: September 23, 2021
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Jhao-Cheng CHEN, Huang-Hsien CHANG, Wen-Long LU, Shao Hsuan CHUANG, Ching-Ju CHEN, Tse-Chuan CHOU
  • Publication number: 20210233836
    Abstract: A substrate structure includes a wiring structure, a first bump pad, a second bump pad and a compensation structure. The wiring structure includes a plurality of redistribution layers. The first bump pad and the second bump pad are bonded to and electrically connected to the wiring structure. An amount of redistribution layers disposed under the first bump pad is greater than an amount of redistribution layers disposed under the second bump pad. The compensation structure is disposed under the second bump pad.
    Type: Application
    Filed: July 29, 2020
    Publication date: July 29, 2021
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Syu-Tang LIU, Tsung-Tang TSAI, Huang-Hsien CHANG, Ching-Ju CHEN
  • Publication number: 20210151407
    Abstract: A package structure includes a wiring structure and a first electronic device. The wiring structure includes at least one dielectric layer and at least one circuit layer in contact with the dielectric layer. The first electronic device is electrically connected to the wiring structure, and has a first surface, a second surface and at least one lateral side surface extending between the first surface and the second surface. The first electronic device includes a first active circuit region and a first protrusion portion. The first protrusion portion protrudes from the at least one lateral side surface of the first electronic device. A portion of the first active circuit region is disposed in the first protrusion portion.
    Type: Application
    Filed: November 15, 2019
    Publication date: May 20, 2021
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Syu-Tang LIU, Min Lung HUANG, Huang-Hsien CHANG, Tsung-Tang TSAI, Ching-Ju CHEN
  • Publication number: 20210118812
    Abstract: A package structure includes a wiring structure, a first electronic device, a second electronic device and a reinforcement structure. The wiring structure includes at least one dielectric layer, and at least one circuit layer in contact with the dielectric layer. The at least one circuit layer includes at least one interconnection portion. The first electronic device and the second electronic device are electrically connected to the wiring structure. The second electronic device is electrically connected to the first electronic device through the at least one interconnection portion of the at least one circuit layer. The reinforcement structure is disposed above the at least one interconnection portion of the at least one circuit layer.
    Type: Application
    Filed: October 17, 2019
    Publication date: April 22, 2021
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Syu-Tang LIU, Min Lung HUANG, Huang-Hsien CHANG, Tsung-Tang TSAI, Ching-Ju CHEN
  • Publication number: 20200324897
    Abstract: A buoy position monitoring method includes a buoy positioning step, an unmanned aerial vehicle receiving step and an unmanned aerial vehicle flying step. In the buoy positioning step, a plurality of buoys are put on a water surface. Each of the buoys is capable of sending a detecting signal. Each of the detecting signals is sent periodically and includes a position dataset of each of the buoys. In the unmanned aerial vehicle receiving step, an unmanned aerial vehicle is disposed on an initial position, and the unmanned aerial vehicle receives the detecting signals. In the unmanned aerial vehicle flying step, when at least one of the buoys is lost, the unmanned aerial vehicle flies to a predetermined position to get contact with the at least one buoy that is lost.
    Type: Application
    Filed: April 9, 2020
    Publication date: October 15, 2020
    Inventors: Ching-Ju CHEN, Chuan-Yu CHANG, Chia-Yan CHENG, Meng-Syue LI
  • Patent number: 10741483
    Abstract: A substrate structure includes a wiring structure, a first bump pad, a second bump pad and a compensation structure. The wiring structure includes a plurality of redistribution layers. The first bump pad and the second bump pad are bonded to and electrically connected to the wiring structure. An amount of redistribution layers disposed under the first bump pad is greater than an amount of redistribution layers disposed under the second bump pad. The compensation structure is disposed under the second bump pad.
    Type: Grant
    Filed: January 28, 2020
    Date of Patent: August 11, 2020
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Syu-Tang Liu, Tsung-Tang Tsai, Huang-Hsien Chang, Ching-Ju Chen