Patents by Inventor Ching-Jung HSU

Ching-Jung HSU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11506611
    Abstract: A surface-enhanced Raman scattering (SERS) detection method is provided for detecting a target analyte in a sample. The SERS detection method generally includes the steps of: (a). preparing an extract of the sample; (b). introducing the sample extract onto a SERS substrate, causing the target analyte to be absorbed in the SERS substrate; (c). introducing a volatile organic solvent onto the SERS substrate to have the target analyte of the sample extract dissolved and comes out of the SERS substrate; (d). irradiating the SERS substrate with light to evaporate the volatile organic solvent, leaving a more condensed target analyte on the SERS substrate; (e). irradiating the condensed target analyte with laser light to have the target analyte penetrate deeply into the SERS substrate; and (f). performing Raman measurement with a laser beam focusing on the SERS substrate to analyze the target analyte.
    Type: Grant
    Filed: July 20, 2017
    Date of Patent: November 22, 2022
    Assignee: PHANSCO CO., LTD.
    Inventors: Chao-Ming Tsen, Ching-Wei Yu, Wei-Chung Chao, Yung-Hsiang Wang, Cheng-Chien Li, Shao-Kai Lin, Tzu-Hung Hsu, Chang-Jung Wen
  • Patent number: 11495681
    Abstract: A semiconductor device includes a semiconductor substrate, a recess, a first gate oxide layer, and a gate structure. The semiconductor substrate includes a first region and a second region adjacent to the first region. The recess is disposed in the first region of the semiconductor substrate, and an edge of the recess is located at an interface between the first region and the second region. At least a part of the first gate oxide layer is disposed in the recess. The first gate oxide layer includes a hump portion disposed adjacent to the edge of the recess, and a height of the hump portion is less than a depth of the recess. The gate structure is disposed on the first region and the second region of the semiconductor substrate, and the gate structure overlaps the hump portion of the first gate oxide layer in a vertical direction.
    Type: Grant
    Filed: October 12, 2020
    Date of Patent: November 8, 2022
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chang-Po Hsiung, Ching-Chung Yang, Shan-Shi Huang, Shin-Hung Li, Nien-Chung Li, Wen-Fang Lee, Chiu-Te Lee, Chih-Kai Hsu, Chun-Ya Chiu, Chin-Hung Chen, Chia-Jung Hsu, Ssu-I Fu, Yu-Hsiang Lin
  • Patent number: 11458715
    Abstract: A method for preparing a bifunctional film, including: (a) drying a first polymer solution to form a film to form an anti-adhesion layer; and (b) drying a second polymer solution over the anti-adhesion layer to form a film to form an attachment layer. The first polymer solution includes a first hydrophobic solution and a first hydrophilic solution, and in the first polymer solution, the weight ratio of the solute of the first hydrophobic solution to the solute of the first hydrophilic solution is 1:0.01-1. Moreover, the second polymer solution consists of a second hydrophilic solution.
    Type: Grant
    Filed: November 6, 2019
    Date of Patent: October 4, 2022
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Hsin-Hsin Shen, Yu-Chi Wang, Ming-Chia Yang, Yu-Bing Liou, Wei-Hong Chang, Yun-Han Lin, Hsin-Yi Hsu, Yun-Chung Teng, Chia-Jung Lu, Yi-Hsuan Lee, Jian-Wei Lin, Kun-Mao Kuo, Ching-Mei Chen
  • Patent number: 11373879
    Abstract: A planarization method and a CMP method are provided. The planarization method includes providing a substrate with a first region and a second region having different degrees of hydrophobicity or hydrophilicity and performing a surface treatment to the first region to render the degrees of hydrophobicity or hydrophilicity in proximity to that of the second region. The CMP method includes providing a substrate with a first region and a second region; providing a polishing slurry on the substrate, wherein the polishing slurry and the surface of the first region have a first contact angle, and the polishing slurry and the surface of the first region have a second contact angle; modifying the surface of the first region to make a contact angle difference between the first contact angle and the second contact angle equal to or less than 30 degrees.
    Type: Grant
    Filed: September 12, 2020
    Date of Patent: June 28, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Tung-Kai Chen, Ching-Hsiang Tsai, Kao-Feng Liao, Chih-Chieh Chang, Chun-Hao Kung, Fang-I Chih, Hsin-Ying Ho, Chia-Jung Hsu, Hui-Chi Huang, Kei-Wei Chen
  • Publication number: 20210387306
    Abstract: A slurry blending tool may include a blending tank to receive and blend one or more materials into a slurry, and at least one inlet pipe connected to the blending tank and to provide the one or more materials to the blending tank. The at least one inlet pipe may vertically enter the blending tank and may not contact the blending tank. The slurry blending tool may include a blending pump partially provided within the blending tank and to blend the one or more materials into the slurry. The slurry blending tool may include an outlet pipe connected to the blending pump and to remove the slurry from the blending tank.
    Type: Application
    Filed: June 15, 2020
    Publication date: December 16, 2021
    Inventors: Chi-Wei CHIU, Yung-Long CHEN, Bo-Zhang CHEN, Chong-Cheng SU, Yu-Chun CHEN, Ching-Jung HSU, Lai-Chi TUNG
  • Publication number: 20210375645
    Abstract: A chemical dispensing system is capable of simultaneously supplying a semiconductor processing chemical for production and testing through the use of independent chemical supply lines, which reduces production downtime of an associated semiconductor process, increases throughput and capability of the semiconductor process, and/or the like. Moreover, the capability to simultaneously supply the semiconductor processing chemical for production and testing allows for an increased quantity of semiconductor processing chemical batches to be tested with minimal impact to production, which increases quality control over the semiconductor processing chemical. In addition, the independent chemical supply lines may be used to supply the semiconductor processing chemical to production while independently filtering semiconductor processing chemical directly from a storage drum through a filtration loop.
    Type: Application
    Filed: May 29, 2020
    Publication date: December 2, 2021
    Inventors: Ming-Chieh HSU, Yung-Long CHEN, Fang-Pin CHIANG, Feng-An YANG, Ching-Jung HSU, Chi-Tung LAI
  • Patent number: 10043681
    Abstract: A fluid supply system includes a pressure tank configured to contain a pressurized gas and a fluid, a delivery point configured to be connected to a point of use, a recirculation piping connecting the pressure tank to the delivery point, and a return pump connected to the recirculation piping. The recirculation piping defines a circulation path for the fluid from the pressure tank through the delivery point and back to the pressure tank. The return pump is downstream of the delivery point and upstream of the pressure tank in the circulation path.
    Type: Grant
    Filed: July 23, 2013
    Date of Patent: August 7, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ching-Jung Hsu, Yung-Ti Hung, Chun-Feng Hsu, Nan-Peng Cheng
  • Patent number: 9278860
    Abstract: A method and an apparatus for recycling waste sulfuric acid solution are provided. The method includes providing a reaction tank and introducing a waste sulfuric acid (H2SO4) solution into the reaction tank, and the waste sulfuric acid solution includes hydrogen peroxide (H2O2). The method also includes supplying a compound containing chlorine into the reaction tank. The method further includes mixing the compound containing chlorine with the waste sulfuric acid solution to promote a chemical reaction that decomposes the hydrogen peroxide (H2O2).
    Type: Grant
    Filed: July 22, 2014
    Date of Patent: March 8, 2016
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jin-Feng Shiu, Rouh-Jier Wang, Ching-Jung Hsu, Wan-Yu Chen, Han-Ru Hung
  • Publication number: 20160023901
    Abstract: A method and an apparatus for recycling waste sulfuric acid solution are provided. The method includes providing a reaction tank and introducing a waste sulfuric acid (H2SO4) solution into the reaction tank, and the waste sulfuric acid solution includes hydrogen peroxide (H2O2). The method also includes supplying a compound containing chlorine into the reaction tank. The method further includes mixing the compound containing chlorine with the waste sulfuric acid solution to promote a chemical reaction that decomposes the hydrogen peroxide (H2O2).
    Type: Application
    Filed: July 22, 2014
    Publication date: January 28, 2016
    Inventors: Jin-Feng SHIU, Rouh-Jier WANG, Ching-Jung HSU, Wan-Yu CHEN, Han-Ru HUNG
  • Publication number: 20150027552
    Abstract: A fluid supply system includes a pressure tank configured to contain a pressurized gas and a fluid, a delivery point configured to be connected to a point of use, a recirculation piping connecting the pressure tank to the delivery point, and a return pump connected to the recirculation piping. The recirculation piping defines a circulation path for the fluid from the pressure tank through the delivery point and back to the pressure tank. The return pump is downstream of the delivery point and upstream of the pressure tank in the circulation path.
    Type: Application
    Filed: July 23, 2013
    Publication date: January 29, 2015
    Applicant: Taiwna Semiconductor Manufacturing Company, Ltd.
    Inventors: Ching-Jung HSU, Yung-Ti HUNG, Chun-Feng HSU, Nan-Peng CHENG