Abstract: A method for preparing an electronic grade sulfuric acid from a waste sulfuric acid solution includes the steps of: performing, in sequence, a concentration treatment, a cracking treatment, and a purification treatment; performing a first oxidation treatment on sulfur dioxide; performing a first absorption treatment and a second oxidization treatment; performing an evaporation treatment; performing a first removal treatment on an acid mist containing metal ions and anion impurities; performing a second absorption treatment; and performing a second removal treatment on residual sulfur dioxide.

Abstract: A method for preparing electronic grade inorganic acids includes: introducing alkali metal salts into a waste acid solution containing hydrofluoric acid, nitric acid and water to obtain hydrogen fluoride vapor, and a distillation residue mixture containing nitric acid, water and the alkali metal salts; subjecting the first distillation residue mixture to evaporation treatment, and then introducing an alkali earth metal nitrate salt into the resultant nitric acid/water mixture followed by distillation treatment so as to obtain nitric acid vapor; and removing mist droplets in the hydrogen fluoride and nitric acid vapor, followed by condensation treatment and concentration adjustment so as to obtain electronic grade hydrofluoric acid and nitric acid.

Abstract: A method for preparing an electronic grade sulfuric acid from a waste sulfuric acid solution includes the steps of: performing, in sequence, a concentration treatment, a cracking treatment, and a purification treatment; performing a first oxidation treatment on sulfur dioxide; performing a first absorption treatment and a second oxidization treatment; performing an evaporation treatment; performing a first removal treatment on an acid mist containing metal ions and anion impurities; performing a second absorption treatment; and performing a second removal treatment on residual sulfur dioxide.

Abstract: This invention relates to a novel method, which can be carried out according to industrial standards, for producing high-purity hydrochloric acid with a very low particle content, for use in the production of semiconductors.

Abstract: The invention relates to a novel method for producing high-purity sulfuric acid for use in the semiconductor industry. The method comprises the addition of a hydrogen peroxide solution to an engineered oelum in order to reduce the SO2 concentration, evaporation of the SO3 and separation of acid traces. The high-purity SO3 is then enriched with inert gas and the SO3 is absorbed into sulfuric acid.

Abstract: The invention relates to a novel method for producing high-purity sulfuric acid for use in the semiconductor industry. The method comprises the addition of a hydrogen peroxide solution to an engineered oelum in order to reduce the SO2 concentration, evaporation of the SO3 and separation of acid traces. The high-purity SO3 is then enriched with inert gas and the SO3 is absorbed into sulfuric acid.