Abstract: The present disclosure provides a communication system, a sensing device, and a semiconductor device, among other things. One example of the disclosed sensing device includes a semiconductor die having a photodetector. an optical element optically coupled to and disposed on the photodetector, at least one support structure substantially surrounding the optical element, and a top metal portion disposed on the semiconductor die adjacent to but distanced away from the optical element and the at least one support structure.

Abstract: The present disclosure provides a communication system, a sensing device, and a semiconductor device, among other things. One example of the disclosed sensing device includes a semiconductor die having a photodetector, an optical element optically coupled to and disposed on the photodetector, at least one support structure substantially surrounding the optical element, and a top metal portion disposed on the semiconductor die adjacent to but distanced away from the optical element and the at least one support structure.

Abstract: The present disclosure provides a communication system, a sensing device, and a semiconductor device, among other things. One example of the disclosed sensing device includes a semiconductor die having a photodetector, an optical element optically coupled to and disposed on the photodetector, at least one support structure substantially surrounding the optical element, and a top metal portion disposed on the semiconductor die adjacent to but distanced away from the optical element and the at least one support structure.

Abstract: According to one aspect, there is provided an avalanche photodiode comprising a first semiconductor layer that absorbs photons of a first wavelength range and having a first energy bandgap; a second semiconductor layer that absorbs photons of a second wavelength range and having a second energy bandgap, the second energy bandgap being different from the first energy bandgap; and a control layer between the first semiconductor layer and the second semiconductor layer, the control layer having a third energy bandgap engineered to suppress carriers created from dark current.

Abstract: According to one aspect, there is provided an avalanche photodiode comprising a first semiconductor layer that absorbs photons of a first wavelength range and having a first energy bandgap; a second semiconductor layer that absorbs photons of a second wavelength range and having a second energy bandgap, the second energy bandgap being different from the first energy bandgap; and a control layer between the first semiconductor layer and the second semiconductor layer, the control layer having a third energy bandgap engineered to suppress carriers created from dark current.

Abstract: An avalanche photodiode structure, to a method of fabricating an avalanche photodiode structure, and to devices incorporating an avalanche photodiode structure. The avalanche photodiode structure comprises a Ge doped region having a first polarity; a GaAs doped region having a second polarity opposite to the first polarity; and an undoped region between the Ge doped region and the GaAs doped region forming a heterojunction; wherein the undoped region comprises Ge and AlxGa1-xAs.

Abstract: A method of forming gallium arsenide (GaAs)-on-insulator includes providing a substrate and forming a diffusion barrier layer of a compound of formula AlxGa1-xAs on the substrate. A layer of GaAs is formed on the diffusion barrier layer of AlxGa1-xAs. The layer of AlxGa1-xAs is substantially completely oxidized to transform the layer of AlxGa1-xAs into an electrical insulator as well as a diffusion barrier.