Abstract: Methods and semiconductor devices are provided. A method includes determining a location of a polyimide opening (PIO) corresponding to an under-bump metallization (UBM) feature in a die. The die includes a substrate and an interconnect structure over the substrate. The method also includes determining a location of a stacked via structure in the interconnect structure based on the location of the PIO. The method further includes forming, in the interconnect structure, the stacked via structure comprising at most three stacked contact vias at the location of the PIO.

Abstract: When a primary winding current increases to an upper limit determined by a reference voltage having a soft-start characteristic, a power switch is turned OFF. When a secondary winding current decreases to a lower limit determined by another predetermined reference voltage, the power switch is turned ON. A minimum ON-time limiting unit prevents the power switch from being turned OFF before a minimum ON-time expires. The minimum ON-time may be provided with a soft-start modulation. A minimum OFF-time limiting unit prevents the power switch from being turned ON before a minimum OFF-time expires. A maximum ON-time limiting unit prevents the power switch from still remaining ON after a maximum ON-time expires.

Abstract: When a primary winding current increases to an upper limit determined by a reference voltage having a soft-start characteristic, a power switch is turned OFF. When a secondary winding current decreases to a lower limit determined by another predetermined reference voltage, the power switch is turned ON. A minimum ON-time limiting unit prevents the power switch from being turned OFF before a minimum ON-time expires. The minimum ON-time may be provided with a soft-start modulation. A minimum OFF-time limiting unit prevents the power switch from being turned ON before a minimum OFF-time expires. A maximum ON-time limiting unit prevents the power switch from still remaining ON after a maximum ON-time expires.

Abstract: A camera strobe recharging IC includes a one-shot unit, an R-S latch block unit, a PWM control unit, and a ready control unit. The one-shot unit provides square wave signals. The R-S latch block unit is electrically connected with the one-shot unit. The PWM control unit includes a reference voltage source, an oscillator, a PWM comparator, a voltage boost comparator, and a current source. The ready control unit includes an FET, which has a gate contact electrically connected with an output contact of the R-S latch block unit. Accordingly, the present invention is compact and structurally tiny to facilitate integration and is good at modulating charging current, accelerating charging, and automatically recharging.