Patents by Inventor Ching-Kuo Chen

Ching-Kuo Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11936381
    Abstract: A switch module with an automatic switching function and a method for automatically switching the switch module according to the load, wherein a first comparator and a second comparator are configured to automatically determine whether the load is light or heavy according to the voltage divided by a first resistor and a second resistor and the voltage of a source resistor, thereby generating a voltage control signal. A plurality of transistors are configured to receive a gate input signal according to the voltage control signal, thereby selectively bringing a GaN transistor or a MOSFET transistor in a conducting state. In this way, the output quality and efficiency of the power supply at light and heavy loads can be improved according to the characteristics of different transistors.
    Type: Grant
    Filed: October 19, 2022
    Date of Patent: March 19, 2024
    Assignee: POTENS SEMICONDUCTOR CORP.
    Inventors: Ching Kuo Chen, Wen Nan Huang
  • Publication number: 20230368950
    Abstract: A packaging structure with a magnetocaloric material, comprising a substrate, a plurality of electrical connection structures, a die, and a sealing compound. A magnetocaloric material is added to the substrate. The die is electrically connected to the substrate through the electrical connection structures, and then encapsulated with the sealing compound. When the packaging structure is turned on, the magnetocaloric material in the substrate creates a magnetocaloric effect, which can not only take away the temperature of the packaging structure through magnetic refrigeration, but also increase the temperature difference between the packaging structure and the outside, thereby improving the efficiency of heat dissipation.
    Type: Application
    Filed: May 11, 2022
    Publication date: November 16, 2023
    Inventors: Wen Nan Huang, Ching Kuo Chen, Chih Ming Yu, Hsiang Chi Meng, I Ming Lo
  • Patent number: 11804834
    Abstract: An electromagnetic interference regulator by use of capacitive parameters of the field-effect transistor for detecting the induced voltage and the induced current of the field-effect transistor to determine whether the operating frequency of the field-effect transistor is within the preset special management frequency of electromagnetic interference. When the basic frequency and the multiplied frequency exceed the limit, the content of the external capacitor unit can be adjusted to assist the products using field-effect transistors to maintain excellent electromagnetic interference adjustment capabilities under various loads, thereby optimizing the characteristics of electromagnetic interference.
    Type: Grant
    Filed: November 23, 2021
    Date of Patent: October 31, 2023
    Assignee: POTENS SEMICONDUCTOR CORP.
    Inventors: Wen Nan Huang, Ching Kuo Chen, Shiu Hui Lee, Hsiang Chi Meng, Cho Lan Peng, Chuo Chien Tsao
  • Patent number: 11588473
    Abstract: A circuit with a metal-oxide semiconductor field-effect transistor and a diode module is applied to a power factor correction circuit, which can effectively reduce the heat generated by the whole system under heavy load. The circuit includes a metal-oxide semiconductor field-effect transistor and a diode module and a load determination unit. The diode module includes a plurality of diodes with a switch. The load determination unit can control the connection/disconnection of each diode in the diode module based on the magnitude of the load current. It can effectively reduce the current generated by each diode due to the load, thereby reducing the heat generation of the overall system. Moreover, due to the contact capacitance effect after the diodes are connected in parallel, the electromagnetic interference (EMI) characteristics of the power factor correction circuit of the system can be further optimized.
    Type: Grant
    Filed: November 23, 2021
    Date of Patent: February 21, 2023
    Assignee: POTENS SEMICONDUCTOR CORP.
    Inventors: Wen Nan Huang, Ching Kuo Chen, Chih Ming Yu, Hsiang Chi Meng
  • Publication number: 20230043861
    Abstract: A circuit with a metal-oxide semiconductor field-effect transistor and a diode module is applied to a power factor correction circuit, which can effectively reduce the heat generated by the whole system under heavy load, The circuit includes a metal-oxide semiconductor field-effect transistor and a diode module and a load determination unit. The diode module includes a plurality of diodes with a switch. The load determination unit can control the connection/disconnection of each diode in the diode module based on the magnitude of the load current. It can effectively reduce the current generated by each diode due to the load, thereby reducing the heat generation of the overall system. Moreover, due to the contact capacitance effect after the diodes are connected in parallel, the electromagnetic interference (EMI) characteristics of the power factor correction circuit of the system can be further optimized.
    Type: Application
    Filed: November 23, 2021
    Publication date: February 9, 2023
    Inventors: Wen Nan HUANG, Ching Kuo CHEN, Chih Ming YU, Hsiang Chi MENG
  • Publication number: 20230038599
    Abstract: An electromagnetic interference regulator by use of capacitive parameters of the field-effect transistor for detecting the induced voltage and the induced current of the field-effect transistor to determine whether the operating frequency of the field-effect transistor is within the preset special management frequency of electromagnetic interference. When the basic frequency and the multiplied frequency exceed the limit, the content of the external capacitor unit can be adjusted to assist the products using field-effect transistors to maintain excellent electromagnetic interference adjustment capabilities under various loads, thereby optimizing the characteristics of electromagnetic interference.
    Type: Application
    Filed: November 23, 2021
    Publication date: February 9, 2023
    Applicant: Potens Semiconductor Corp.
    Inventors: Wen Nan Huang, Ching Kuo Chen, Shiu Hui Lee, Hsiang Chi Meng, Cho Lan Peng, Chuo Chien Tsao
  • Publication number: 20230037951
    Abstract: A metal-oxide semiconductor field-effect transistor with asymmetric parallel die and an implementation method thereof, comprising an inductor, a load recognition control unit and a metal-oxide semiconductor field-effect transistor having a first die, a second die, and a switch. The first die is larger in size than the second die. The inductor can produce a voltage signal when the load changes. The switch is controlled by the load recognition control unit such that different dies are switched on under different load conditions, thereby improving efficiency under light load condition in addition to reducing volume and cost.
    Type: Application
    Filed: November 23, 2021
    Publication date: February 9, 2023
    Applicant: Potens Semiconductor Corp.
    Inventors: Wen Nan Huang, Ching Kuo Chen, Chih Ming Yu, Hsiang Chi Meng, Tung Ming Lai
  • Publication number: 20230039285
    Abstract: A hybrid metal-oxide semiconductor field-effect transistor with variable gate impedance and an implementation method thereof, wherein the hybrid metal-oxide semiconductor field-effect transistor has the characteristic of changing the on-resistance according to different drive voltages. By use of a feedback loop and a variable gate drive voltage generator which can vary the generated gate drive voltage based on different loads, the present disclosure can still adjust the gate drive voltage under different load conditions without requiring a plurality of metal-oxide semiconductor field-effect transistors in series/parallel to achieve the lowest power loss.
    Type: Application
    Filed: November 23, 2021
    Publication date: February 9, 2023
    Inventors: Wen Nan HUANG, Ching Kuo CHEN, Shiu Hui LEE, Tung Ming LAI, Cho Lan PENG, Chuo Chien TSAO
  • Patent number: 10425003
    Abstract: A power supply device is provided. The power supply device includes a power converter and a control circuit. The control circuit is coupled to a power converter. The power converter is configured to convert input power to provide output power. The control circuit is configured to receive a control signal and provide a dummy current according to the control signal and the output power, so that the sum of a current value of the dummy current and a current value of the output power is greater than or equal to a threshold value. The power converter can accordingly convert the input power in a soft switching manner.
    Type: Grant
    Filed: January 16, 2019
    Date of Patent: September 24, 2019
    Assignee: Chicony Power Techology Co., Ltd.
    Inventors: Wen-Nan Huang, Ching-Kuo Chen, Hsiao-Chih Ku, Wan-Ching Lee