Abstract: A semiconductor device includes a fin-shaped structure on a substrate, a gate structure on the fin-shaped structure and an interlayer dielectric (ILD) layer around the gate structure, and a single diffusion break (SDB) structure in the ILD layer and the fin-shaped structure. Preferably, the SDB structure includes a bottom portion and a top portion on the bottom portion, in which the top portion and the bottom portion include different widths.

Abstract: A quantum dot composite structure and a method for forming the same are provided. The quantum dot composite structure includes: a glass particle including a glass matrix and a plurality of quantum dots located in the glass matrix, wherein at least one of the plurality of quantum dots includes an exposed surface in the glass matrix; and an inorganic protective layer disposed on the glass particle and covering the exposed surface.

Abstract: A display panel including a pixel circuit substrate, a planarization layer, a plurality of bonding pads, a plurality of light-emitting devices, a plurality of auxiliary electrodes, and a reflective structure layer is provided. The pixel circuit substrate has a plurality of signal lines. The planarization layer covers the signal lines. The bonding pads are disposed on the planarization layer and are electrically connected to the signal lines. The light-emitting devices are electrically bonded to the bonding pads. The auxiliary electrodes are disposed between the bonding pads. The reflective structure layer is disposed between the light-emitting devices and overlaps at least part of the auxiliary electrodes and the bonding pads. A method of fabricating the display panel is also provided.

Abstract: A display panel including a pixel circuit substrate, a planarization layer, a plurality of bonding pads, a plurality of light-emitting devices, a plurality of auxiliary electrodes, and a reflective structure layer is provided. The pixel circuit substrate has a plurality of signal lines. The planarization layer covers the signal lines. The bonding pads are disposed on the planarization layer and are electrically connected to the signal lines. The light-emitting devices are electrically bonded to the bonding pads. The auxiliary electrodes are disposed between the bonding pads. The reflective structure layer is disposed between the light-emitting devices and overlaps at least part of the auxiliary electrodes and the bonding pads. A method of fabricating the display panel is also provided.

Abstract: A manufacturing method of a crystallized metal oxide layer includes: providing a substrate; forming a first insulation layer on the substrate; forming a first metal oxide layer on the first insulation layer; forming a second metal oxide layer on the first insulation layer; forming a second insulation layer on the first metal oxide layer and the second metal oxide layer; forming a silicon layer on the second insulation layer; performing a first laser process on a portion of the silicon layer covering the first metal oxide layer; and performing a second laser process on a portion of the silicon layer covering the second metal oxide layer. An active device and a manufacturing method thereof are also provided.

Abstract: A manufacturing method of a crystallized metal oxide layer includes: providing a substrate; forming a first insulation layer on the substrate; forming a first metal oxide layer on the first insulation layer; forming a second metal oxide layer on the first insulation layer; forming a second insulation layer on the first metal oxide layer and the second metal oxide layer; forming a silicon layer on the second insulation layer; performing a first laser process on a portion of the silicon layer covering the first metal oxide layer; and performing a second laser process on a portion of the silicon layer covering the second metal oxide layer. An active device and a manufacturing method thereof are also provided.

Abstract: The present invention provides a method for crystallizing a metal oxide semiconductor layer, a semiconductor structure, a method for manufacturing a semiconductor structure, an active array substrate, and an indium gallium zinc oxide crystal. The crystallization method includes the following steps: forming an amorphous metal oxide semiconductor layer on a substrate; forming an oxide layer on the amorphous metal oxide semiconductor layer; forming an amorphous silicon layer on the oxide layer; and irradiating the amorphous silicon layer by using a laser, so as to heat the amorphous silicon layer, where the heated amorphous silicon layer heats the amorphous metal oxide semiconductor layer, so that the amorphous metal oxide semiconductor layer is converted into a crystallized metal oxide semiconductor layer.

Abstract: A manufacturing method of a crystallized metal oxide layer includes: providing a substrate; forming a first insulation layer on the substrate; forming a first metal oxide layer on the first insulation layer; forming a second metal oxide layer on the first insulation layer; forming a second insulation layer on the first metal oxide layer and the second metal oxide layer; forming a silicon layer on the second insulation layer; performing a first laser process on a portion of the silicon layer covering the first metal oxide layer; and performing a second laser process on a portion of the silicon layer covering the second metal oxide layer. An active device and a manufacturing method thereof are also provided.

Abstract: In the subject system, a customer virtual local network (VLAN) tag is protected using, for example, media access control security (MACSec). MACSec authentication is performed on a packet by including the VLAN tag in an integrity check value (ICV) computation. When a packet is received from an Ethernet Virtual Connection (EVC) at an ingress port of the subject system, a remote site is identified and an associated VLAN tag is determined based on the identified remote site and a VLAN tag associated with the packet. The subject system may perform VLAN tag mapping to account for changes in a VLAN tag across EVCs. An ICV is computed based on the determined VLAN tag and compared with an ICV stored in the received packet. The integrity check passes when the computed ICV matches the stored ICV and fails when the computed ICV does not match the stored ICV.

Abstract: The present invention provides a method for crystallizing a metal oxide semiconductor layer, a semiconductor structure, a method for manufacturing a semiconductor structure, an active array substrate, and an indium gallium zinc oxide crystal. The crystallization method includes the following steps: forming an amorphous metal oxide semiconductor layer on a substrate; forming an oxide layer on the amorphous metal oxide semiconductor layer; forming an amorphous silicon layer on the oxide layer; and irradiating the amorphous silicon layer by using a laser, so as to heat the amorphous silicon layer, where the heated amorphous silicon layer heats the amorphous metal oxide semiconductor layer, so that the amorphous metal oxide semiconductor layer is converted into a crystallized metal oxide semiconductor layer.

Abstract: In the subject system, a customer virtual local network (VLAN) tag is protected using, for example, media access control security (MACSec). MACSec authentication is performed on a packet by including the VLAN tag in an integrity check value (ICV) computation. When a packet is received from an Ethernet Virtual Connection (EVC) at an ingress port of the subject system, a remote site is identified and an associated VLAN tag is determined based on the identified remote site and a VLAN tag associated with the packet. The subject system may perform VLAN tag mapping to account for changes in a VLAN tag across EVCs. An ICV is computed based on the determined VLAN tag and compared with an ICV stored in the received packet. The integrity check passes when the computed ICV matches the stored ICV and fails when the computed ICV does not match the stored ICV.

Abstract: An architecture for creating a single image for a stack of switches. A plurality of the internetworking devices are provided in a stack configuration for interconnecting networks. Software is executed in each internetworking device such that the stack of internetworking devices appear as a single internetworking device to the interconnected networks.

Abstract: An architecture for creating a single image for a stack of switches. A plurality of the internetworking devices are provided in a stack configuration for interconnecting networks. Software is executed in each internetworking device such that the stack of internetworking devices appear as a single internetworking device to the interconnected networks.