Abstract: The present disclosure provides a display apparatus including an LED array. The display apparatus comprises a light emitting diode (LED) array, a power source, a controller, a PWM switch, and a current source module. The controller is configured to generate a control signal for controlling a first LED column during a scan period. The PWM switch is electrically connected between the first LED column and a second power level. The current source module is electrically connected between the first LED column and the second power level. The current source module is configured to provide a current flow with multiple levels. The PWM switch is controlled based on a first portion of the control signal, and the amount of the current flow provided by the current source module in the scan period depends on a second portion of the control signal.

Abstract: A method for manufacturing an integrated circuit includes patterning a plurality of photomask layers over a substrate, partially backfilling the patterned plurality of photomask layers with a first material using atomic layer deposition, completely backfilling the patterned plurality of photomask layers with a second material using atomic layer deposition, removing the plurality of photomask layers to form a masking structure comprising at least one of the first and second materials, and transferring a pattern formed by the masking structure to the substrate and removing the masking structure. The first material includes a silicon dioxide, silicon carbide, or carbon material, and the second material includes a metal oxide or metal nitride material.

Abstract: Various embodiments of the present disclosure are directed towards a semiconductor processing system including an overlay (OVL) shift measurement device. The OVL shift measurement device is configured to determine an OVL shift between a first wafer and a second wafer, where the second wafer overlies the first wafer. A photolithography device is configured to perform one or more photolithography processes on the second wafer. A controller is configured to perform an alignment process on the photolithography device according to the determined OVL shift. The photolithography device performs the one or more photolithography processes based on the OVL shift.

Abstract: A detection device for an insertion slot of an LED display system is provided. When a first receiving card is inserted in the insertion slot, the detection device outputs, to a display panel of the LED display system, a first data output with reference to an image signal outputted by the first receiving card. When a second receiving card is inserted in the insertion slot, the detection device outputs a high-impedance signal to the second receiving card to enable the second receiving card to generate an enabling output, generates a second data output with reference to the enabling output and the image signal outputted by the second receiving card, and transmits the second data output to the display panel.

Abstract: An exemplary focusing method for enhancing resolution of an optical system is provided. The method includes: focusing on an object and obtaining an image of the object by a lens assembly of the optical system, using a designated point within a motion range of an auto focusing (AF) lens in the lens assembly to calculate; determine a first coordinate and a second coordinate of the AF lens according to resolution of the image; obtaining a direction and distance for positioning the AF lens according to the two coordinates, driving the AF lens to move along the direction of motion, and limiting the range of motion of the AF lens to obtain an optimum focusing location to focus on the object according to the motion distance. A related system is also provided.

Abstract: An exemplary focusing method for enhancing resolution of an optical system is provided. The method includes: focusing on an object and obtaining an image of the object by a lens assembly of the optical system, using a designated point within a motion range of an auto focusing (AF) lens in the lens assembly to calculate; determine a first coordinate and a second coordinate of the AF lens according to resolution of the image; obtaining a direction and distance for positioning the AF lens according to the two coordinates, driving the AF lens to move along the direction of motion, and limiting the range of motion of the AF lens to obtain an optimum focusing location to focus on the object according to the motion distance. A related system is also provided.

Abstract: An exemplary assemblable substrate for an SIP includes a substrate and a group of welding pads. The substrate defines a receiving portion therein for receiving a line of pins of the SIP. The group of welding pads is formed on the substrate for electrically coupling the line of pins to the substrate; the group of welding pads being distributed around the receiving portion, two welding pads corresponding to two adjacent pins in the same line being distributed on opposing sides of the receiving portion.

Abstract: A rubber-modified styrenic resin composition which has high falling impact strength, high gloss, high tensile strength and the product produced from which has little or no unpleasant odor is provided by controlling the residual styrenic monomers in the resin composition to a content of below 1500 ppm and the residual 4-vinyl cyclohexene to a content of below 150 ppm. The number average particle size of the butadienic rubber is 0.08 to 0.35 .mu.m, the amount of butadienic rubber particles having a particle size of below 0.1 .mu.m is 19.5 to 99%, the amount of the butadienic rubber particles having a particle size of between 0.1 to 0.25 .mu.m is 0.5 to 60%, and the amount of the butadienic rubber particles having a particle size greater than 0.25 .mu.m is 0.5 to 80%, based on the total number of the butadienic rubber particles.