Abstract: A holder plate for negative pressure chucking, in which the holder plate is plate body comprising a holding surface and a bottom surface. Air passages are formed inside the holder plate and communicates the holding surface and the bottom surface, and the air passages form a plurality of ventilation openings on the holding surface. A total area of an opening of the ventilation openings in the holding surface is less than 50% of the area of the holder plate and greater than 0.2% of the area of the holder plate. The thermal conductivity of the holder plate is greater than 100 W/mK; wherein W is watts, m is meters, and K is the absolute temperature scale.

Abstract: A manufacturing method of an optical device includes: providing a lower transparent substrate; wherein the lower transparent substrate includes an upper surface; providing a quantum dot film element and a glue-material enclosure wall disposed on the upper surface; wherein the glue-material enclosure wall surrounds the quantum dot film element; providing an upper transparent substrate covering the quantum dot film element and the glue-material enclosure wall, such that the quantum dot film element and the glue-material enclosure wall are sandwiched between the lower transparent substrate and the upper transparent substrate; and cutting the lower transparent substrate and the upper transparent substrate to form a lower protective film and an upper protective film corresponding to the quantum dot film element, so as to obtain the optical device including the lower protective film, the upper protective film, the quantum dot film element, and the glue-material enclosure wall.

Abstract: A low concentration ozone gas supply device includes an ozone dilution tank, an ozone generator, a dilution gas supplier, and plural gas reservoir. The ozone dilution tank is provided with a dilution space, and the ozone dilution tank is provided with an overflow vent connected to the dilution space. The ozone generator is configured to continuously supply ozone to the dilution space of the ozone dilution tank. The dilution gas supplier is configured to supply a dilution gas to the dilution space, so that the ozone is mixed with the dilution gas in the dilution space to form the low concentration ozone gas, and the low concentration ozone gas in the dilution space continuously overflows via the overflow vent. The gas reservoirs are connected to the dilution space; wherein the volume of the dilution space is larger than the sum of the volumes of gas reservoirs.

Abstract: A gas mixing method to enhance plasma includes: providing a reaction chamber; wherein the reaction chamber includes an accommodating space and the reaction chamber includes a top opening connected to the accommodating space; providing an adapter plate, and fixing the adapter plate to the reaction chamber to be arranged corresponding to the top opening; wherein the adapter plate further includes a window area communicating both sides of the adapter plate; providing a target disposed on top of the adapter plate to seal the top opening; premixing a plasma gas and an auxiliary gas into a gas mixture, and introducing the gas mixture into the accommodating space; and providing a biasing field to the accommodating space.

Abstract: A particle prevention method in chamber includes providing a shielding ring, wherein the shielding ring includes a first side wall, a second side wall, and a bottom, the second side wall is parallel to the first side wall, and the bottom is connected to the first side wall, and the second side wall to form an annular groove area; connecting the first side wall to the reaction chamber with the first side wall extending toward an upper portion of a accommodating space of a reaction chamber; fixing a first deflector plate to the first side wall, wherein the first deflector plate extends obliquely toward the bottom, and the first deflector plate is located above the aperture; and fixing a second deflector plate to the second side wall, wherein the second deflector plate is located above the first deflector plate, and the second deflector plate extends obliquely toward the bottom.

Abstract: A UV-assisted and plasma-enhanced process method includes: providing a lower chamber and a reaction space defined therein; providing an upper cover, wherein the upper cover has a window and vent holes; sealing a chamber opening of the lower chamber with the upper cover to form a reaction chamber; providing an outer tube body and an inner tube body disposed in the outer tube body, the outer tube body covering the window and the vent holes, and the inner tube body connected to the window; providing a UV light source at a top end of the inner tube body; providing an induction coil around the outer tube body; inducing a first gas to a first gas chamber in the inner tube body and a second gas to the second gas chamber between the inner and outer tube bodies; and activating the UV light source and the induction coil optionally.

Abstract: A gas mixing method to enhance plasma includes: providing a reaction chamber; wherein the reaction chamber includes an accommodating space and the reaction chamber includes a top opening connected to the accommodating space; providing an adapter plate, and fixing the adapter plate to the reaction chamber to be arranged corresponding to the top opening; wherein the adapter plate further includes a window area communicating both sides of the adapter plate; providing a target disposed on top of the adapter plate to seal the top opening; premixing a plasma gas and an auxiliary gas into a gas mixture, and introducing the gas mixture into the accommodating space; and providing a biasing field to the accommodating space.

Abstract: Disclosed are a light-emitting device with quantum dots and a manufacturing method thereof. The light-emitting device includes a light-emitting diode chip, a transparent barrier layer, a quantum dot film, and a transparent protective layer. The transparent barrier layer is disposed on the light-emitting diode chip. The quantum dot film is disposed on the transparent barrier layer, such that the light-emitting diode chip is separated from the quantum dot film by the transparent barrier layer. The transparent protective layer is disposed on the quantum dot film, such that the quantum dot film is encapsulated between the transparent barrier layer and the transparent protective layer.

Abstract: An optical part includes a quantum dot film layer, a lower transparent film layer, and an outer protective film. The quantum dot film layer includes an upper surface, a lower surface, and a lateral surface. The lateral surface connects the upper surface with the lower surface, and the quantum dot film layer is a film containing light emitting semiconductor nanoparticles. The lower transparent film layer is disposed on the lower surface of the quantum dot film layer. The outer protective film directly or indirectly covers the upper surface of the quantum dot film layer, and extends to cover the lateral surface of the quantum dot film layer.

Abstract: This disclosure is a method of using plasma enhanced process to do periodic maintenance. The method includes performing a first atomic layer deposition on a substrate on a carrier disk to form a thin film on the substrate, and determining that an insulating film deposited on an edge of a surface of the carrier disk has a thickness greater than a pre-determined value. A second atomic layer deposition is performed on the carrier disk without the substrate placed thereon, to from a conductive film on the insulating film of the carrier disk, so that the carrier disk has conductive properties. Then the substrate is placed on the carrier disk, and the first atomic layer deposition is performed on the substrate on the carrier disk. Through the method, the cycle of cleaning and maintaining the carrier disk is greatly extended to improve the rate of equipment usage.

Abstract: An atomic layer deposition apparatus for coating on fine powders is disclosed, which includes a vacuum chamber, a shaft sealing device, and a driving unit. The shaft sealing device includes an outer tube and an inner tube arranged in an accommodating space of the outer tube. The driving unit drives the vacuum chamber to rotate through the outer tube to agitate the fine powders in a reaction space of the vacuum chamber. An air extraction line and an air intake line are arranged in a connection space of the inner tube. The air extraction line is used to extract gas from the reaction space. The air intake line is used to transport non-reactive gas to the reaction space to blow the fine powders around in the reaction space and precursor gas to the reaction space to form thin films with uniform thickness on the surface of the fine powders.

Abstract: A shower head assembly of an atomic layer deposition device has a first trapezoidal column component, a second trapezoidal column component and a column component, wherein a first bottom edge of the first trapezoidal column component is connected to a second top edge of the second trapezoidal column component, and a second bottom edge of the second trapezoidal column component is connected to a top edge of the column component. The first trapezoidal column component has a first bottom dimension distance, the second trapezoidal column component has a second vertical distance, and the column component has a column vertical distance, wherein a ratio of the column vertical distance to the second vertical distance is greater than or equal to 1.2, and a total distance of the second vertical distance and the column vertical distance is less than the first bottom dimension distance.

Abstract: A shower head assembly of an atomic layer deposition device has a first trapezoidal column component, a second trapezoidal column component and a column component, wherein a first bottom edge of the first trapezoidal column component is connected to a second top edge of the second trapezoidal column component, and a second bottom edge of the second trapezoidal column component is connected to a top edge of the column component. The first trapezoidal column component has a first bottom dimension distance, the second trapezoidal column component has a second vertical distance, and the column component has a column vertical distance, wherein a ratio of the column vertical distance to the second vertical distance is greater than or equal to 1.2, and a total distance of the second vertical distance and the column vertical distance is less than the first bottom dimension distance.

Abstract: An atomic layer deposition equipment and an atomic layer deposition process method are disclosed. The atomic layer deposition equipment includes a chamber, a substrate stage, at least one bottom pumping port, at least one hollow component, a baffle and a shower head assembly, wherein the hollow component has an exhaust hole. The baffle is below the hollow component and forms an upper exhaust path with the hollow component, so that the flow field of the precursor in the atomic layer deposition process can be adjusted to a slow flow field to make a uniform deposition on the substrate.

Abstract: The present disclosure is a thin-film deposition equipment including a chamber, a stage, at least one baffle and at least one shielding component. The stage is for carrying a substrate, the baffle prevents the substrate on the stage from backside coating. The shielding component is positioned higher the baffle for shielding the baffle, to receive target atoms which is yet deposited on the substrate for the baffle. Such that to avoid the target atoms deposited on the baffle forming a thin film, and to further prevent a problem of the thin film from being heated then flowing from the baffle to a contact area between the baffle and the substrate.

Abstract: An atomic layer deposition equipment and an atomic layer deposition process method are disclosed. The atomic layer deposition equipment includes a chamber, a substrate stage, at least one bottom pumping port, at least one hollow component, a baffle and a shower head assembly, wherein the hollow component has an exhaust hole. The baffle is below the hollow component and forms an upper exhaust path with the hollow component, so that the flow field of the precursor in the atomic layer deposition process can be adjusted to a slow flow field to make a uniform deposition on the substrate.

Abstract: An atomic layer deposition apparatus for coating on fine powders is disclosed, which includes a vacuum chamber, a shaft sealing device, and a driving unit. The shaft sealing device includes an outer tube and an inner tube arranged in an accommodating space of the outer tube. The driving unit drives the vacuum chamber to rotate through the outer tube to agitate the fine powders in a reaction space of the vacuum chamber. An air extraction line and an air intake line are arranged in a connection space of the inner tube. The air extraction line is used to extract gas from the reaction space. The air intake line is used to transport non-reactive gas to the reaction space to blow the fine powders around in the reaction space and precursor gas to the reaction space to form thin films with uniform thickness on the surface of the fine powders.