Abstract: In an embodiment, a device includes: a first source/drain region; a second source/drain region; an inter-layer dielectric (ILD) layer over the first source/drain region and the second source/drain region; a first source/drain contact extending through the ILD layer, the first source/drain contact connected to the first source/drain region; a second source/drain contact extending through the ILD layer, the second source/drain contact connected to the second source/drain region; and an isolation feature between the first source/drain contact and the second source/drain contact, the isolation feature including a dielectric liner and a void, the dielectric liner surrounding the void.

Abstract: A method may include forming a mask layer on top of a first dielectric layer formed on a first source/drain and a second source/drain, and creating an opening in the mask layer and the first dielectric layer that exposes portions of the first source/drain and the second source/drain. The method may include filling the opening with a metal layer that covers the exposed portions of the first source/drain and the second source/drain, and forming a gap in the metal layer to create a first metal contact and a second metal contact. The first metal contact may electrically couple to the first source/drain and the second metal contact may electrically couple to the second source/drain. The gap may separate the first metal contact from the second metal contact by less than nineteen nanometers.

Abstract: A method of forming a semiconductor device includes: forming a gate structure over a fin that protrudes above a substrate; forming source/drain regions over the fin on opposing sides of the gate structure; forming a first dielectric layer and a second dielectric layer successively over the source/drain regions; performing a first etching process to form an opening in the first dielectric layer and in the second dielectric layer, where the opening exposes an underlying electrically conductive feature; after performing the first etching process, performing a second etching process to enlarge a lower portion of the opening proximate to the substrate; and forming a contact plug in the opening after the second etching process.

Abstract: A multipurpose exercise machine comprises a main frame, a loading frame, and an operation frame. The main frame is composed of two arcuate frames separated at an interval. The loading frame intended to support the weight of an exerciser is fastened pivotally with the main frame. The loading frame is provided at one end thereof with two pedals fastened pivotally therewith. The operation frame comprises a curve rod fastened pivotally with two frame rods of the main frame, a first driving rod, and a second driving rod. The first and the second driving rods are fastened with the loading frame. The curve rod is fastened pivotally with an actuating rod. The first and the second driving rods can be adjusted such that the exercise machine can be used for the horse-riding exercise, the arm building exercise, the chest building exercise, and so forth.

Abstract: A multipurpose exercise device comprises a frame, a transmission mechanism and two rocking rod members. The frame has a slanted rod provided thereon with a sliding member. The transmission mechanism comprises a first support rod, a horizontal connection rod, and a second support rod. The first support rod is fastened pivotally with the sliding member and the horizontal connection rod. The second support rod is fastened with the horizontal connection rod and is provided with a pivoting lug engageable with a pivot for locating the second support rod. The rocking rod members are mounted respectively on both ends of the horizontal connection rod such that the rocking rod members can be pulled or pushed. The transmission mechanism is provided with an elastic block enabling the multipurpose exercise device to be used interchangeably for doing various exercises.