Abstract: A pixel unit for driving an organic light emitting diode (OLED) is disclosed. The pixel unit includes a driving transistor, a compensating capacitor, a selecting switch module, a power switch and a configuration switch. One terminal of the compensating capacitor is coupled to a gate of the driving transistor. The selecting switch module provides the ground voltage or the compensating voltage to the other terminal of the compensating capacitor according to a first control signal. The power switch is coupled between a power voltage and a drain of the driving transistor and is controlled by a second control signal. The configuration switch receives the first control signal for controlling a connecting configuration of the driving transistor. The pixel unit is driven according to the first and the second control signals for compensating threshold voltage shifting of the OLED and the driving transistor.

Abstract: An organic thin field transistor is disclosed. The organic thin field transistor includes a first and a second insulting layers, a metal structure and an organic layer serving as an active layer. Materials of the first and the second insulting layers are different, and by performing an etching process, a surface of the metal structure and a surface of the second insulting layer are effectively aligned. Because of the high flatness of the surface of the metal structure and the second insulting layer, a continuous film-forming property and crystallinity of the active layer of the organic thin field transistor are improved, so as to achieve a better the electrical characteristic.

Abstract: A pixel unit for driving an organic light emitting diode (OLED) is disclosed. The pixel unit includes a driving transistor, a compensating capacitor, a selecting switch module, a power switch and a configuration switch. One terminal of the compensating capacitor is coupled to a gate of the driving transistor. The selecting switch module provides the ground voltage or the compensating voltage to the other terminal of the compensating capacitor according to a first control signal. The power switch is coupled between a power voltage and a drain of the driving transistor and is controlled by a second control signal. The configuration switch receives the first control signal for controlling a connecting configuration of the driving transistor. The pixel unit is driven according to the first and the second control signals for compensating threshold voltage shifting of the OLED and the driving transistor.

Abstract: An organic thin field transistor is disclosed. The organic thin field transistor includes a first and a second insulting layers, a metal structure and an organic layer serving as an active layer. Materials of the first and the second insulting layers are different, and by performing an etching process, a surface of the metal structure and a surface of the second insulting layer are effectively aligned. Because of the high flatness of the surface of the metal structure and the second insulting layer, a continuous film-forming property and crystallinity of the active layer of the organic thin field transistor are improved, so as to achieve a better the electrical characteristic.

Abstract: A method of forming a hydrophobic silicon dioxide layer is provided. A substrate is provided. Thereafter, a hydrophobic silicon dioxide layer is formed on the substrate by using a plasma chemical vapour deposition (CVD) system, in which tetraethyl orthosilicate (TEOS) and an oxygen-containing gas are introduced at a reactive temperature between 25° C. and 150° C. A method of forming an organic thin film transistor (OTFT) including the hydrophobic silicon dioxide layer as a gate insulating layer is also provided. In the present invention, the hydrophobic silicon dioxide layer can be directly formed at low temperature without using the conventional surface modification treatment. Accordingly, the process is simplified and the cost is reduced.

Abstract: A method of forming a hydrophobic silicon dioxide layer is provided. A substrate is provided. Thereafter, a hydrophobic silicon dioxide layer is formed on the substrate by using a plasma chemical vapor deposition (CVD) system, in which tetraethyl orthosilicate (TEOS) and an oxygen-containing gas are introduced at a reactive temperature between 25° C. and 150° C. A method of forming an organic thin film transistor (OTFT) including the hydrophobic silicon dioxide layer as a gate insulating layer is also provided. In the present invention, the hydrophobic silicon dioxide layer can be directly formed at low temperature without using the conventional surface modification treatment. Accordingly, the process is simplified and the cost is reduced.

Abstract: A pixel and an illuminating device thereof are provided. The pixel includes an organic light emitting diode (OLED), a transistor, a first switch, a second switch and a capacitor. One end of the OLED is electrically connected to a first voltage. A first source/drain of the transistor is electrically connected to a first potential point. The first switch is electrically connected between a second source/drain of the transistor and a second potential point, and is controlled by a first driving signal. The second switch is electrically connected between the second source/drain of the transistor and a gate of the transistor, and is controlled by a second driving signal. The capacitor is electrically connected between the gate of the transistor and a data line. The first driving signal and the second driving signal are used to alternately enable/disable the first and the second switches, so as to drive the pixel.

Abstract: An active matrix organic electroluminescent panel is disclosed, which comprises a substrate; a plurality of functional elements, which having at least one transistor having a drain, a source, and a gate; a plurality of organic electroluminescent devices disposed over the substrate, which comprised, in sequence, a first electrode, at least one organic electroluminescent media and a second electrode; and a plurality of conductive lines disposed over the surface of the substrate to connect the and/or organic electroluminescent devices; wherein the conductive lines comprises silver-copper alloy, which is composed of 80 to 99.8 mol % of silver, 0.1 to 10 mol % of copper, and 0.1 to 10 mol % of transition metal selected from the group consisting of palladium, magnesium, gold, platinum, and the combinations thereof, and the total mol % of the silver-copper alloy is 100.

Abstract: A method for defining plural windows with different etching depths simultaneously is disclosed. The method includes steps of (a) forming a photoresist on a substrate having a multiple film structure thereon, (b) exposing a first region of the photoresist to a first exposure dose and a second region of the photoresist to a second exposure dose, (c) obtaining different remaining thickenesses of the photoresist on the first region and the second region by a development, and (d) etching the first region and the second region of the photoresist for forming the plural windows with different etching depths of the multiple film structure.

Abstract: A method for defining plural windows with different etching depths simultaneously is disclosed. The method includes steps of (a) forming a photoresist on a substrate having a multiple film structure thereon, (b) exposing a first region of the photoresist to a first exposure dose and a second region of the photoresist to a second exposure dose, (c) obtaining different remaining thickenesses of the photoresist on the first region and the second region by a development, and (d) etching the first region and the second region of the photoresist for forming the plural windows with different etching depths of the multiple film structure.