Abstract: A laser device for providing light to a LiDAR system comprises a plurality of seed lasers configured to provide multiple seed light beams, at least two of the seed light beams having different wavelengths. An amplifier is optically coupled to the plurality of seed lasers to receive the multiple seed light beams. A power pump is configured to provide pump power to the amplifier, where the amplifier amplifies the multiple seed light beams using the pump power to obtain amplified light beams. A second light coupling unit is configured to demultiplex the amplified light beams to obtain a plurality of output light beams, at least two of the output light beams having wavelengths corresponding to the wavelengths of the at least two seed light beams.

Abstract: An apparatus for in-situ etching monitoring in a plasma processing chamber includes a continuous wave broadband light source, an illumination system configured to illuminate an area on a substrate with an incident light beam being directed from the continuous wave broadband light source at normal incidence to the substrate, a collection system configured to collect a reflected light beam being reflected from the illuminated area on the substrate, and to direct the reflected light beam to a first light detector, and a controller. The controller is configured to determine a property of the substrate or structures formed thereupon based on a reference light beam and the reflected light beam, and control an etch process based on the determined property. The reference light beam is generated by the illumination system by splitting a portion of the incident light beam and directed to a second light detector.

Abstract: Embodiments of the present disclosure provide stray light filter structures in light detection and ranging (LiDAR) systems to attenuate stray light and reduce unwanted scattering. In some embodiments, a micro lens array is used together with a pinhole array to block stray light in the optical path just prior to the photodetector. In some embodiments, a bandpass optical filter is used in the optical path prior to the microlens array. In other embodiments, a slit filter is used further upstream in the optical path to block unwanted stray light and allow returning signal light to pass to imaging optics that provide a returning signal light image at a photodetector. In some embodiments, the imaging optics include a collimating lens and a focusing lens. In some embodiments, an optical bandpass filter is positioned on the optical path between the collimating lens and the focusing lens to reject light that is outside of a an expected wavelength range for returning signal light.

Abstract: A light detection and ranging (LiDAR) system for detecting objects in blind-spot areas is provided. The system comprises a housing, a scanning-based LiDAR assembly disposed in the housing, and a non-scanning-based LiDAR assembly also disposed in the housing. The scanning-based LiDAR assembly is configured to scan a plurality of light beams to illuminate a first field-of-view (FOV). The non-scanning-based LiDAR assembly is configured to transmit laser light to illuminate a second FOV without scanning. The scanning-based LiDAR assembly's detection distance range extends beyond the detection distance range of the non-scanning-based LiDAR assembly.

Abstract: A light detection and ranging (LiDAR) system for detecting objects in blind-spot areas is provided. The system comprises a housing and a scanning-based LiDAR assembly disposed in the housing. The scanning-based LiDAR assembly includes a first light source, a multi-facet polygon, collimation lenses, collection lenses, and a light detector. The first light source is configured to provide a plurality of light beams. The multi-facet polygon is rotatable to scan the plurality of light beams to illuminate an FOV. The multi-facet polygon and the first light source are vertically stacked. The collimation lenses are optically coupled to the first light source, and are configured to collimate the plurality of light beams provided by the first light source. The one or more collection lenses are configured to collect return light generated based on the illumination of the first FOV. The light detector is configured to receive the collected return light.

Abstract: A semiconductor processing system includes a processing chamber configured to perform a semiconductor manufacturing process on each of a plurality of wafers. The processing chamber includes at least one consumable component, and a substrate handling module located proximate the processing chamber and in communication with the processing chamber via a wafer access port. The wafer handling module includes a wafer handling robot configured to transfer each of the wafers between to the substrate handling module and the processing chamber through the wafer access port, and an optical diagnostic system including an optical sensor configured to detect an optical signal from the at least one consumable component.

Abstract: A method of manufacturing semiconductor devices includes repeatedly performing a transfer operation which transfers each of a plurality of semiconductor wafers between a substrate handling module and a processing chamber through a wafer access port, the processing chamber including at least one consumable component. Using the processing chamber, a semiconductor manufacturing process is performed on each of the plurality of semiconductor wafers; and detecting an optical signal from the at least one consumable component during a time when the processing chamber is not performing the semiconductor manufacturing process on the wafers.

Abstract: Techniques herein include an apparatus and method for measuring and monitoring properties of fluids consumed in a semiconductor fabrication process. The apparatus includes a flow cell having a hollow chamber, a first chamber sidewall of the hollow chamber bisecting the length of the flow cell, the first chamber sidewall having a predetermined angle to the incoming direction of light from the first light source; a refractive index sensor configured to detect the light from the first light source transmitted through the hollow chamber of the flow cell and exiting the flow cell through the second flow cell sidewall of the at least six flow cell sidewalls; and a first light sensor configured to detect the light from the first light source scattered off the fluid in the hollow chamber.

Abstract: An apparatus for detecting defects on a sample is provided. The apparatus includes a stage for receiving a sample to be inspected, and a first light source configured to generate an incident light beam to illuminate the sample on the stage. The first light source is configured to sequentially emit light of different wavelengths in wavelength sweeps. The apparatus also includes imaging optics for collecting light scattered from the sample and for forming a detection light beam, a detector for receiving the detection light beam and acquiring images of the sample, collection optics disposed within the detection light beam and configured to direct the detection light beam to the detector, and a first light modulator. The first light modulator is configured to filter out signals from the detection light beam, where the signals originate from uniform periodicity of uniformly repeating structures on the sample.

Abstract: Techniques herein include an apparatus and method for measuring and monitoring properties of fluids consumed in a semiconductor fabrication process. The apparatus includes a flow cell having a hollow chamber, a first chamber sidewall of the hollow chamber bisecting the length of the flow cell, the first chamber sidewall having a predetermined angle to the incoming direction of light from the first light source; a refractive index sensor configured to detect the light from the first light source transmitted through the hollow chamber of the flow cell and exiting the flow cell through the second flow cell sidewall of the at least six flow cell sidewalls; and a first light sensor configured to detect the light from the first light source scattered off the fluid in the hollow chamber.

Abstract: An apparatus for in-situ etching monitoring in a plasma processing chamber includes a continuous wave broadband light source, an illumination system configured to illuminate an area on a substrate with an incident light beam being directed from the continuous wave broadband light source at normal incidence to the substrate, a collection system configured to collect a reflected light beam being reflected from the illuminated area on the substrate, and to direct the reflected light beam to a first light detector, and a controller. The controller is configured to determine a property of the substrate or structures formed thereupon based on a reference light beam and the reflected light beam, and control an etch process based on the determined property. The reference light beam is generated by the illumination system by splitting a portion of the incident light beam and directed to a second light detector.

Abstract: An apparatus, a system, and a method for in-situ etching monitoring in a plasma processing chamber are provided. The apparatus includes a continuous wave broadband light source to generate incident light beam, an illumination system configured to illuminate an area on a substrate with an incident light beam being directed at normal incidence to the substrate, a collection system configured to collect a reflected light beam being reflected from the illuminated area on the substrate, and direct the reflected light beam to a detector, and processing circuitry. The processing circuitry is configured to process the reflected light beam to suppress background light, determine a property of the substrate or structures formed thereupon based on reference light beam and the reflected light beam that are processed to suppress the background light, and control an etch process based on the determined property.

Abstract: An apparatus and a method for in-situ phase determination are provided. The apparatus includes a measurement chamber configured to retain a substance, and an entrance window mounted on a side of the measurement chamber. An exit window is mounted on an opposite side of the measurement chamber, and the exit window is parallel with the entrance window. The apparatus further includes a light source configured to generate an incident light beam. The incident light beam is directed to the entrance window at a non-zero angle of incidence with respect to a normal of the entrance window. The incident light beam passes through the entrance window, the measurement chamber and the exit window to form an output light beam. A detector is positioned under the exit window and configured to collect the output light beam passing through the exit window and generate measurement data.

Abstract: An advanced optical sensor and method for detection of optical events in a plasma processing system. The method includes detecting at least one light emission signal in a plasma processing chamber. The at least one detected light emission signal including light emissions from an optical event. The method further includes processing the at least one light emission signal and detecting a signature of the optical event from the processed light emission signal.

Abstract: An apparatus, a system, and a method for in-situ etching monitoring in a plasma processing chamber are provided. The apparatus includes a continuous wave broadband light source to generate incident light beam, an illumination system configured to illuminate an area on a substrate with an incident light beam being directed at normal incidence to the substrate, a collection system configured to collect a reflected light beam being reflected from the illuminated area on the substrate, and direct the reflected light beam to a detector, and processing circuitry. The processing circuitry is configured to process the reflected light beam to suppress background light, determine a property of the substrate or structures formed thereupon based on reference light beam and the reflected light beam that are processed to suppress the background light, and control an etch process based on the determined property.

Abstract: Disclosed is a method, system, and apparatus for optical emission measurement. The apparatus includes a collection system for collecting a plasma optical emission spectra through an optical window disposed at a wall of a plasma processing chamber. The optical system includes a mirror configured to scan a plurality of non-coincident rays across the plasma processing chamber; and a telecentric coupler for collecting an optical signal from a plasma and directing the optical signal to a spectrometer for measuring the plasma optical emission spectra.

Abstract: Provided is a method, system, and apparatus for inspecting a substrate. The method comprises illuminating the substrate with a singular laser beam, the singular laser beam forming an illuminated spot on the substrate and a bright fringe at a surface of the substrate, the bright fringe extending over at least a portion of the illuminated spot, and detecting, by an optical detection system, scattered light from nano-defects present on the substrate within the illuminated spot.

Abstract: An apparatus and a method for in-situ phase determination are provided. The apparatus includes a measurement chamber configured to retain a substance, and an entrance window mounted on a side of the measurement chamber. An exit window is mounted on an opposite side of the measurement chamber, and the exit window is parallel with the entrance window. The apparatus further includes a light source configured to generate an incident light beam. The incident light beam is directed to the entrance window at a non-zero angle of incidence with respect to a normal of the entrance window. The incident light beam passes through the entrance window, the measurement chamber and the exit window to form an output light beam. A detector is positioned under the exit window and configured to collect the output light beam passing through the exit window and generate measurement data.

Abstract: An apparatus, system, and method for in-situ etching monitoring in a plasma processing chamber. The apparatus includes a continuous wave broadband light source; an illumination system configured to illuminate an area on a substrate with an incident light beam having a fixed polarization direction, the incident light beam from the broadband light source being modulated by a shutter; a collection system configured to collect a reflected light beam being reflected from the illuminated area on the substrate, and direct the reflected light beam to a detector; and processing circuitry. The processing circuitry is configured to process the reflected light beam to suppress background light, determine a property value from the processed light, and control an etch process based on the determined property value.

Abstract: Disclosed is a method, computer method, system, and apparatus for measuring two-dimensional distributions of optical emissions from a plasma in a semiconductor plasma processing chamber. The acquired two-dimensional distributions of plasma optical emissions can be used to infer the two-dimensional distributions of concentrations of certain chemical species of interest that are present in the plasma, and thus provide a useful tool for process development and also for new and improved processing tool development. The disclosed technique is computationally simple and inexpensive, and involves the use of an expansion of the assumed optical intensity distribution into a sum of basis functions that allow for circumferential variation of optical intensity. An example of suitable basis functions are Zernike polynomials.