Abstract: A method of wireless signal transmission management includes transmitting a plurality of data packets to tethering equipment from user equipment to tethering equipment, determining a size of each of the plurality of data packets by the tethering equipment, designating data packets of the plurality of data packets having a specific range of sizes as control signal packets by the tethering equipment, and prioritizing in transmitting the control signal packets to a cellular network by the tethering equipment.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above- mentioned memory device is also provided.

Abstract: The invention provides a self-organized quantum dot semiconductor structure. The quantum dot semiconductor structure includes: a conductive ridge on a substrate; an insulative layer covering the substrate and the conductive ridge, wherein the insulative layer includes a top portion and two sidewalls over the conductive ridge; a semiconductor mechanism of etching back and thermal oxidation, implemented on a semiconductor-alloyed layer set on the insulative layer; a plurality of quantum dots respectively embedded within a plurality of silicon dioxide spacer islands based on the semiconductor mechanism, the quantum dots and the silicon dioxide spacer islands adhered to the sidewalls of the insulative layer; and a plurality of conductive ledges adhered to the silicon dioxide spacer islands, wherein each of the conductive ledges is a portion of an electrode self-alignment to the quantum dot.

Abstract: A display device and a display control method are provided. The display device is applicable to a display panel. The display device includes a display driver integrated circuit (IC), a gate driver in panel (GIP) circuit and a GIP check circuit. The GIP circuit includes a plurality of shift registers connected in series, and the shift registers may generate a plurality of gate driving signals to control operations of a plurality of rows of display units within the display panel, respectively. The GIP check circuit may sequentially check whether a plurality of specific gate driving signals among the gate driving signals are available. The display driver IC may generate a check result according to at least one signal from the display panel, and selectively adjust display data corresponding to an image to make the display panel display an adjusted image according to the check result.

Abstract: The invention provides a quantum dot manufacturing method and related quantum dot semiconductor structure. The quantum dot semiconductor structure includes: a conductive ridge on a substrate; an insulative layer covering the substrate and the conductive ridge, wherein the insulative layer includes a top portion and two sidewalls over the conductive ridge; a plurality of quantum dots respectively embedded within a plurality of silicon dioxide spacer islands, which are adhered to the sidewalls of the insulative layer; and a plurality of conductive ledges adhered to the silicon dioxide spacer islands, wherein each of the conductive ledges is a portion of an electrode with alignment to the corresponding quantum dot.

Abstract: The invention provides a quantum dot manufacturing method and related quantum dot semiconductor structure. The quantum dot semiconductor structure includes: a conductive ridge on a substrate; an insulative layer covering the substrate and the conductive ridge, wherein the insulative layer includes a top portion and two sidewalls over the conductive ridge; a plurality of quantum dots respectively embedded within a plurality of silicon dioxide spacer islands, which are adhered to the sidewalls of the insulative layer; and a plurality of conductive ledges adhered to the silicon dioxide spacer islands, wherein each of the conductive ledges is a portion of an electrode with alignment to the corresponding quantum dot.

Abstract: A backlight module is disclosed, which includes light emitting units arranged in columns. Each light emitting unit includes a light emitter and a first switch in parallel connection. The first switch is configured to selectively bypass the light emitter. In the backlight module, the light emitters in the same column of light emitting units are in serial connection.

Abstract: A method for performing hybrid over-current protection (OCP) detection in a display module and associated timing controller are provided. The method includes: during initialization of the display module, after a set of driving voltages have been established, performing first OCP detection in a built-in self-test (BIST) mode to generate a first OCP detection result; writing the first OCP detection result into a register bank, for being accessed by a host device, wherein the display module is applicable to displaying information for the host device; performing second OCP detection in a normal mode to generate a second OCP detection result; and writing the second OCP detection result into the register bank, for being accessed by the host device.

Abstract: A method for performing hybrid over-current protection (OCP) detection in a display module and associated timing controller are provided. The method includes: during initialization of the display module, after a set of driving voltages have been established, performing first OCP detection in a built-in self-test (BIST) mode to generate a first OCP detection result; writing the first OCP detection result into a register bank, for being accessed by a host device, wherein the display module is applicable to displaying information for the host device; performing second OCP detection in a normal mode to generate a second OCP detection result; and writing the second OCP detection result into the register bank, for being accessed by the host device.

Abstract: An ESL driver circuit to be coupled to a host circuit and an ESL panel includes an ESL driver and a controlling transistor. The ESL driver has a serial clock input coupled to the serial clock port of the ESL driver circuit, a serial data input coupled to the serial data port of the ESL driver circuit, a control input coupled to the control port of the ESL driver circuit, and a busy output. The controlling transistor has a control terminal coupled to the busy output of the ESL driver, a first terminal coupled to a supply voltage level via a resistor, and a second terminal coupled to a ground level, and is configured to receive the busy output of the ESL driver to generate a busy signal at the first terminal.

Abstract: A method of ESL driver circuit includes: receiving third-color data and black/white data transmitted from a host circuit via specific communication protocol in a first transmission mode of specific communication protocol; receiving only the third-color data transmitted from the host circuit via the specific communication protocol in a second transmission mode of specific communication protocol; using third-color data buffer to receive and buffer the third-color data transmitted from the host circuit; using black/white data buffer to receive and buffer the black/white data transmitted from the host circuit in the first transmission mode of specific communication protocol; and detecting content of the third-color data buffered in the third-color data buffer to determine whether to output data stored in the black/white data buffer as a set of black/white data outputted to ESL panel or to refill a sequence of don't-care data as the set of black/white data outputted to ESL panel.

Abstract: An electrolyte composition with a low gelling temperature is disclosed, which includes: an electrolyte gelator which is an acrylonitrile-based copolymer; and a liquid electrolyte containing a nitrile-based solvent. A method for manufacturing an electronic device using the aforesaid electrolyte composition is also disclosed.

Abstract: A copolymeric gelator includes a minor monomeric unit; and a major acrylonitrile (AN) monomeric unit copolymerized with the minor monomeric unit to provide a copolymer that is soluble in a solvent comprised of 1,2-dimethyl-3-propylimidazolium iodide and 3-methoxypropionitrile. The major acrylonitrile (AN) monomeric units have good ionic conductivity and coordinating sites for lithium ions to be dissolved with a liquid-electrolytic solvent. The minor monomeric units may be selected among vinyl acetate, allyl acetate, styrene, acrylamide and a combination thereof. The gelator and a liquid-electrolytic solvent may be used to produce a gel electrolyte.

Abstract: The present invention provides a dye-sensitized solar cell (DSSC), and a method for manufacturing the same. In the present invention, the DSSC comprises: a dye-sensitized semiconductor electrode, a counter electrode opposite to the dye-sensitized semiconductor electrode, and an electrolyte disposed between the dye-sensitized semiconductor electrode and the counter electrode. Herein, the dye-sensitized semiconductor electrode comprises: an anode; a TiO2 layer disposed on the anode; and a dye absorbed to the TiO2 layer. In addition, the counter electrode comprises: a first transparent substrate with a first transparent electrode formed thereon; and a Pt film disposed on the first transparent electrode, wherein the Pt film is formed with plural Pt nanoparticles, the diameters of the Pt nanoparticles are 1-8 nm, and the thickness of the Pt film is 0.5-3 nm.

Abstract: An electrolyte composition with a low gelling temperature is disclosed, which includes: an electrolyte gelator which is an acrylonitrile-based copolymer; and a liquid electrolyte containing a nitrile-based solvent. A method for manufacturing an electronic device using the aforesaid electrolyte composition is also disclosed.

Abstract: A gelator for producing a gel electrolyte is a copolymer and comprises multiple major monomeric units, multiple minor monomeric units and multiple optional components. The major monomeric units comprise acrylonitrile (AN) monomeric units that have good ionic conductivity and coordinating sites for lithium ions to be dissolved with a liquid-electrolytic solvent. The minor monomeric units are a combination of at least one type monomeric unit, and the combination of at least one type monomeric unit is selected from a group consisting of vinyl acetate (VA), allyl acetate (AA), styrene, acrylamide and at least one reactive compound. A gel electrolyte is a mixture of a gelator and a liquid-electrolytic solvent.