Patents by Inventor Ching-Nan Hwang

Ching-Nan Hwang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method for fabricating the same
    Patent number: 9431239
    Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a doped region in the substrate; forming a thermal oxide layer on the substrate and the doped region; removing the thermal oxide layer to form a first recess; forming an epitaxial layer on the substrate and in the first recess; and forming a gate dielectric layer in the epitaxial layer.
    Type: Grant
    Filed: July 26, 2015
    Date of Patent: August 30, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chiu-Te Lee, Ke-Feng Lin, Nien-Chung Li, Ching-Nan Hwang, Shih-Teng Huang, Ming-Yen Liu
  • SEMICONDUCTOR PROCESS
    Publication number: 20150104914
    Abstract: A semiconductor process is provided, including following steps. A polysilicon layer is formed on a substrate. The polysilicon layer is cryo-implanted with at least two of multiple species including a germanium species, a carbon species and a p- or n-type species, at a temperature ranging between ?40° C. and ?120° C. An asymmetric dual-side heating treatment is performed to the polysilicon layer, wherein a power for a front-side heating is different from a power for a backside heating.
    Type: Application
    Filed: November 24, 2014
    Publication date: April 16, 2015
    Inventors: Chan-Lon Yang, Ching-Nan Hwang, Chi-Heng Lin, Chun-Yao Yang, Ger-Pin Lin, Ching-I Li
  • SEMICONDUCTOR PROCESS
    Publication number: 20130337622
    Abstract: A semiconductor process is provided, including following steps. A polysilicon layer is formed on a substrate. An asymmetric dual-side heating treatment is performed to the polysilicon layer, wherein a power for a front-side heating is different from a power for a backside heating.
    Type: Application
    Filed: August 20, 2013
    Publication date: December 19, 2013
    Applicant: United Microelectronics Corp.
    Inventors: Chan-Lon Yang, Ching-Nan Hwang, Chi-Heng Lin, Chun-Yao Yang, Ger-Pin Lin, Ching-I Li
  • Semiconductor process
    Patent number: 8536072
    Abstract: A semiconductor process is provided, including following steps. A polysilicon layer is formed on a substrate. An asymmetric dual-side heating treatment is performed to the polysilicon layer, wherein a power for a front-side heating is different from a power for a backside heating.
    Type: Grant
    Filed: February 7, 2012
    Date of Patent: September 17, 2013
    Assignee: United Microelectronics Corp.
    Inventors: Chan-Lon Yang, Ching-Nan Hwang, Chi-Heng Lin, Chun-Yao Yang, Ger-Pin Lin, Ching-I Li
  • SEMICONDUCTOR PROCESS
    Publication number: 20130203226
    Abstract: A semiconductor process is provided, including following steps. A polysilicon layer is formed on a substrate. An asymmetric dual-side heating treatment is performed to the polysilicon layer, wherein a power for a forntside heating is different from a power for a backside heating.
    Type: Application
    Filed: February 7, 2012
    Publication date: August 8, 2013
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chan-Lon Yang, Ching-Nan Hwang, Chi-Heng Lin, Chun-Yao Yang, Ger-Pin Lin, Ching-I Li