Abstract: The present disclosure provides a packing method including following steps. Genetic algorithm is utilized to calculate multiple packing programs. Multiple candidate packing programs including all items are selected from the packing programs. Among each of the candidate packing programs, at least one of the items to be placed earlier is classified into a first subset, and at least another one of the items to be placed later is classified into a second subset. Among each of the candidate packing programs, a first packing for the first subset is maintained, and a second packing for the second subset is recalculated by using a greedy algorithm to generate an updated second packing.

Abstract: A semiconductor wafer and method for manufacturing thereof are provided. The semiconductor wafer includes a handling substrate and a silicon layer over the handling substrate and having a {111} facet at an edge of a top surface of the silicon layer. The a defect count on the top surface of the silicon layer is less than about 15 each semiconductor wafer. The method includes the following operations: a semiconductor-on-insulator (SOI) substrate is provided, wherein the SOI substrate has a handling substrate, a silicon layer over the handling substrate, and a silicon germanium layer over the silicon layer; and the silicon germanium layer is etched at a first temperature with hydrochloric acid to expose a first surface of the silicon layer.

Abstract: A semiconductor wafer and method for manufacturing thereof are provided. The semiconductor wafer includes a handling substrate and a silicon layer over the handling substrate and having a {111} facet at an edge of a top surface of the silicon layer. The a defect count on the top surface of the silicon layer is less than about 15 each semiconductor wafer. The method includes the following operations: a semiconductor-on-insulator (SOI) substrate is provided, wherein the SOI substrate has a handling substrate, a silicon layer over the handling substrate, and a silicon germanium layer over the silicon layer; and the silicon germanium layer is etched at a first temperature with hydrochloric acid to expose a first surface of the silicon layer.