Abstract: Provided is a 3DIC structure including first and second IC chips and connectors. The first IC chip includes a first metallization structure, a first optical active component, and a first photonic interconnection layer. The second IC chip includes a second metallization structure, a second optical active component, and a second photonic interconnection layer. The first and second IC chips are bonded via the first and second photonic interconnection layers. The first optical active component is between the first photonic interconnection layer and the first metallization structure. The first optical active component and the first metallization structure are bonded to each other. The second optical active component is between the second photonic interconnection layer and the second metallization structure. The second optical active component and the second metallization structure are bonded to each other.

Abstract: A semiconductor device includes a first die, a second die bonding to the first die thereby forming a bonding interface, and a pad of the first die and exposed from a polymeric layer of the first die. The semiconductor device further has a conductive material on the pad and extended from the pad in a direction parallel to a stacking direction of the first die and the second die. In the semiconductor device, the conductive material extended to a top surface, which is vertically higher than a backside of the second die, wherein the backside is a surface opposite to the bonding interface.

Abstract: A semiconductor device includes a first die, a second die bonding to the first die thereby forming a bonding interface, and a pad of the first die and exposed from a polymeric layer of the first die. The semiconductor device further has a conductive material on the pad and extended from the pad in a direction parallel to a stacking direction of the first die and the second die. In the semiconductor device, the conductive material extended to a top surface, which is vertically higher than a backside of the second die, wherein the backside is a surface opposite to the bonding interface.

Abstract: Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes a first integrated circuit die, a second integrated circuit die coupled to the first integrated circuit die, and a through-via coupled between a first conductive feature of the first integrated circuit die and second conductive feature of the second integrated circuit die. A conductive shield is disposed around a portion of the through-via.

Abstract: Provided is a 3DIC structure including first and second IC chips and connectors. The first IC chip includes a first metallization structure, a first optical active component, and a first photonic interconnection layer. The second IC chip includes a second metallization structure, a second optical active component, and a second photonic interconnection layer. The first and second IC chips are bonded via the first and second photonic interconnection layers. The first optical active component is between the first photonic interconnection layer and the first metallization structure. The first optical active component and the first metallization structure are bonded to each other. The second optical active component is between the second photonic interconnection layer and the second metallization structure. The second optical active component and the second metallization structure are bonded to each other.

Abstract: A microwave diffraction system includes two plates, a lattice model, a transmitter and a detector. The two plates are electrically conductive and configured in a parallel manner so as to form a planar waveguide. The lattice model includes a plurality of cylinders arranged in regular order and is placed between the two plates. The transmitter is arranged at an outside edge of the planar waveguide and configured for providing a microwave towards the lattice model. The detector is arranged at outside edge of the planar waveguide and configured for detecting the microwave reflected from the lattice model. The diffraction pattern obtained by the above-mentioned microwave diffraction system is similar to theoretical value.

Abstract: A microwave diffraction system includes two plates, a lattice model, a transmitter and a detector. The two plates are electrically conductive and configured in a parallel manner so as to form a planar waveguide. The lattice model includes a plurality of cylinders arranged in regular order and is placed between the two plates. The transmitter is arranged at an outside edge of the planar waveguide and configured for providing a microwave towards the lattice model. The detector is arranged at outside edge of the planar waveguide and configured for detecting the microwave reflected from the lattice model. The diffraction pattern obtained by the above-mentioned microwave diffraction system is similar to theoretical value.