Patents by Inventor Ching-Ray Chen
Ching-Ray Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11280786Abstract: The present disclosure provides biochips and methods of fabricating biochips. The method includes combining three portions: a transparent substrate, a first substrate with microfluidic channels therein, and a second substrate. Through-holes for inlet and outlet are formed in the transparent substrate or the second substrate. Various non-organic landings with support medium for bio-materials to attach are formed on the first substrate and the second substrate before they are combined. In other embodiments, the microfluidic channel is formed of an adhesion layer between a transparent substrate and a second substrate with landings on the substrates.Type: GrantFiled: December 3, 2018Date of Patent: March 22, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Hua Chu, Allen Timothy Chang, Ching-Ray Chen, Yi-Hsien Chang, Yi-Shao Liu, Chun-Ren Cheng, Chun-Wen Cheng
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Patent number: 11099152Abstract: The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.Type: GrantFiled: November 8, 2019Date of Patent: August 24, 2021Inventors: Yi-Shao Liu, Chun-Ren Cheng, Ching-Ray Chen, Yi-Hsien Chang, Fei-Lung Lai, Chun-Wen Cheng
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Patent number: 10867836Abstract: A semiconductor device includes a first wafer and a second wafer. The first wafer has a top portion. The second wafer is disposed on the top portion of the first wafer, wherein the second wafer has a bottom portion bonded on the top portion of the first wafer, and a non-bonded area of the bottom portion has a width smaller than 0.5 mm. The bottom portion of the second wafer has a size smaller than or equal to that of the top portion of the first wafer. In some embodiments, the top portion of the first wafer has first rounded corners, and the bottom portion of the second wafer has second corners. A cross-sectional view of each of the second rounded corners has a radius smaller than that of each of first rounded corners. In some embodiments, the bottom portion of the second wafer has right angle corners.Type: GrantFiled: July 26, 2016Date of Patent: December 15, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Kuei-Sung Chang, Ching-Ray Chen, Yen-Cheng Liu, Shang-Ying Tsai
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Publication number: 20200072789Abstract: The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.Type: ApplicationFiled: November 8, 2019Publication date: March 5, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yi-Shao LIU, Chun-Ren Cheng, Ching-Ray Chen, Yi-Hsien Chang, Fei-Lung Lai, Chun-Wen Cheng
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Patent number: 10473616Abstract: The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.Type: GrantFiled: July 14, 2017Date of Patent: November 12, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yi-Shao Liu, Chun-Ren Cheng, Ching-Ray Chen, Yi-Hsien Chang, Fei-Lung Lai, Chun-Wen Cheng
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Publication number: 20190101531Abstract: The present disclosure provides biochips and methods of fabricating biochips. The method includes combining three portions: a transparent substrate, a first substrate with microfluidic channels therein, and a second substrate. Through-holes for inlet and outlet are formed in the transparent substrate or the second substrate. Various non-organic landings with support medium for bio-materials to attach are formed on the first substrate and the second substrate before they are combined. In other embodiments, the microfluidic channel is formed of an adhesion layer between a transparent substrate and a second substrate with landings on the substrates.Type: ApplicationFiled: December 3, 2018Publication date: April 4, 2019Inventors: Chia-Hua Chu, Allen Timothy Chang, Ching-Ray Chen, Yi-Hsien Chang, Yi-Shao Liu, Chun-Ren Cheng, Chun-Wen Cheng
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Patent number: 10145847Abstract: The present disclosure provides biochips and methods of fabricating biochips. The method includes combining three portions: a transparent substrate, a first substrate with microfluidic channels therein, and a second substrate. Through-holes for inlet and outlet are formed in the transparent substrate or the second substrate. Various non-organic landings with support medium for bio-materials to attach are formed on the first substrate and the second substrate before they are combined. In other embodiments, the microfluidic channel is formed of an adhesion layer between a transparent substrate and a second substrate with landings on the substrates.Type: GrantFiled: September 25, 2014Date of Patent: December 4, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Hua Chu, Allen Timothy Chang, Ching-Ray Chen, Yi-Hsien Chang, Yi-Shao Liu, Chun-Ren Cheng, Chun-Wen Cheng
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Patent number: 9968927Abstract: The present disclosure relates to an integrated chip having an integrated optical bio-sensor, and an associated method of fabrication. In some embodiments, the integrated optical bio-sensor has a sensing device arranged within a semiconductor substrate. An optical waveguide structure is located over a first side of the semiconductor substrate at a position over the sensing device. A dielectric structure is disposed onto the optical waveguide structure at a position that separates the optical waveguide structure from a sample retention area configured to receive a sample solution.Type: GrantFiled: May 22, 2015Date of Patent: May 15, 2018Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yi-Shao Liu, Emerson Cheng, Yi-Hsien Chang, Chun-Ren Cheng, Ching-Ray Chen, Alex Kalnitsky, Allen Timothy Chang
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Publication number: 20170315085Abstract: The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.Type: ApplicationFiled: July 14, 2017Publication date: November 2, 2017Inventors: Yi-Shao LIU, Chun-Ren CHENG, Ching-Ray CHEN, Yi-Hsien CHANG, Fei-Lung LAI, Chun-Wen CHENG
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Publication number: 20170316969Abstract: A semiconductor device includes a first wafer and a second wafer. The first wafer has a top portion. The second wafer is disposed on the top portion of the first wafer, wherein the second wafer has a bottom portion bonded on the top portion of the first wafer, and a non-bonded area of the bottom portion has a width smaller than 0.5 mm. The bottom portion of the second wafer has a size smaller than or equal to that of the top portion of the first wafer. In some embodiments, the top portion of the first wafer has first rounded corners, and the bottom portion of the second wafer has second corners. A cross-sectional view of each of the second rounded corners has a radius smaller than that of each of first rounded corners. In some embodiments, the bottom portion of the second wafer has right angle corners.Type: ApplicationFiled: July 26, 2016Publication date: November 2, 2017Inventors: Kuei-Sung Chang, Ching-Ray Chen, Yen-Cheng Liu, Shang-Ying Tsai
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Patent number: 9709525Abstract: The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.Type: GrantFiled: July 14, 2015Date of Patent: July 18, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Shao Liu, Chun-Ren Cheng, Ching-Ray Chen, Yi-Hsien Chang, Fei-Lung Lai, Chun-Wen Cheng
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Publication number: 20160341656Abstract: The present disclosure relates to an integrated chip having an integrated optical bio-sensor, and an associated method of fabrication. In some embodiments, the integrated optical bio-sensor has a sensing device arranged within a semiconductor substrate. An optical waveguide structure is located over a first side of the semiconductor substrate at a position over the sensing device. A dielectric structure is disposed onto the optical waveguide structure at a position that separates the optical waveguide structure from a sample retention area configured to receive a sample solution.Type: ApplicationFiled: May 22, 2015Publication date: November 24, 2016Inventors: Yi-Shao Liu, Emerson Cheng, Yi-Hsien Chang, Chun-Ren Cheng, Ching-Ray Chen, Alex Kalnitsky, Allen Timothy Chang
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Patent number: 9493347Abstract: A method of forming a semiconductor device includes depositing a light reflecting layer over a substrate. The method also includes forming a protection layer over the light reflecting layer. The method further includes forming an anti-reflective coating (ARC) layer over the protection layer. The method additionally includes forming an opening in the ARC layer, the protection layer and the light reflecting layer exposing the substrate. The method also includes removing the ARC layer in a wet solution comprising H2O2, the ARC layer being exposed to the H2O2 at a flow rate greater than about 10 standard cubic centimeters per minute (sccm).Type: GrantFiled: October 7, 2014Date of Patent: November 15, 2016Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yi-Hsien Chang, Chun-Ren Cheng, Yi-Shao Liu, Allen Timothy Chang, Ching-Ray Chen, Yeh-Tseng Li, Wen-Hsiang Lin
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Publication number: 20160011144Abstract: The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.Type: ApplicationFiled: July 14, 2015Publication date: January 14, 2016Inventors: Yi-Shao Liu, Chun-Ren Cheng, Ching-Ray Chen, Yi-Hsien Chang, Fei-Lung Lai, Chun-Wen Cheng
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Patent number: 9080969Abstract: The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.Type: GrantFiled: May 19, 2014Date of Patent: July 14, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Shao Liu, Chun-Ren Cheng, Ching-Ray Chen, Yi-Hsien Chang, Fei-Lung Lai, Chun-Wen Cheng
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Patent number: 9034678Abstract: A BioMEMS microelectromechanical apparatus and for fabricating the same is disclosed. A substrate is provided with at least one signal conduit formed on the substrate. A sacrificial layer of sacrificial material may be deposited on the signal conduit and optionally patterned to remove sacrificial material from outside the packaging covered area. A bonding layer may be deposited on at least a portion of the signal conduit and on the sacrificial layer when included. The bonding layer may be planarized and patterned to form one or more cap bonding pads and define a packaging covered area. A cap may be bonded on the cap bonding pad to define a capped area and so that the signal conduit extends from outside the capped area to inside the capped area. Additionally, a test material such as a fluid may be provided within the capped area.Type: GrantFiled: July 28, 2014Date of Patent: May 19, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Allen Timothy Chang, Yi-Shao Liu, Ching-Ray Chen, Chun-Ren Cheng
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Publication number: 20150024533Abstract: A method of forming a semiconductor device includes depositing a light reflecting layer over a substrate. The method also includes forming a protection layer over the light reflecting layer. The method further includes forming an anti-reflective coating (ARC) layer over the protection layer. The method additionally includes forming an opening in the ARC layer, the protection layer and the light reflecting layer exposing the substrate. The method also includes removing the ARC layer in a wet solution comprising H2O2, the ARC layer being exposed to the H2O2 at a flow rate greater than about 10 standard cubic centimeters per minute (sccm).Type: ApplicationFiled: October 7, 2014Publication date: January 22, 2015Inventors: Yi-Hsien CHANG, Chun-Ren CHENG, Yi-Shao LIU, Allen Timothy CHANG, Ching-Ray CHEN, Yeh-Tseng LI, Wen-Hsiang LIN
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Publication number: 20150011021Abstract: The present disclosure provides biochips and methods of fabricating biochips. The method includes combining three portions: a transparent substrate, a first substrate with microfluidic channels therein, and a second substrate. Through-holes for inlet and outlet are formed in the transparent substrate or the second substrate. Various non-organic landings with support medium for bio-materials to attach are formed on the first substrate and the second substrate before they are combined. In other embodiments, the microfluidic channel is formed of an adhesion layer between a transparent substrate and a second substrate with landings on the substrates.Type: ApplicationFiled: September 25, 2014Publication date: January 8, 2015Inventors: Chia-Hua Chu, Allen Timothy Chang, Ching-Ray Chen, Yi-Hsien Chang, Yi-Shao Liu, Chun-Ren Cheng, Chun-Wen Cheng
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Publication number: 20140335640Abstract: A BioMEMS microelectromechanical apparatus and for fabricating the same is disclosed. A substrate is provided with at least one signal conduit formed on the substrate. A sacrificial layer of sacrificial material may be deposited on the signal conduit and optionally patterned to remove sacrificial material from outside the packaging covered area. A bonding layer may be deposited on at least a portion of the signal conduit and on the sacrificial layer when included. The bonding layer may be planarized and patterned to form one or more cap bonding pads and define a packaging covered area. A cap may be bonded on the cap bonding pad to define a capped area and so that the signal conduit extends from outside the capped area to inside the capped area. Additionally, a test material such as a fluid may be provided within the capped area.Type: ApplicationFiled: July 28, 2014Publication date: November 13, 2014Inventors: Allen Timothy Chang, Yi-Shao Liu, Ching-Ray Chen, Chun-Ren Cheng
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Patent number: 8883021Abstract: A method of forming of MEMS nanostructures includes a portion of a substrate is recessed to form a plurality of mesas in the substrate. Each of the plurality of mesas has a top surface and a sidewall surface. A light reflecting layer is deposited over the substrate thereby covering the top surface and the sidewall surface of each mesa. A protection layer is formed over the light reflecting layer. An ARC layer is formed over the protection layer. An opening in a photo resist layer is formed over the ARC layer over each mesa. A portion of the ARC layer, the protection layer and the light reflecting layer are removed through the opening to expose the top surface of each mesa. The photo resist layer and the ARC layer over the top surface of each mesa are removed.Type: GrantFiled: May 7, 2012Date of Patent: November 11, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Hsien Chang, Chun-Ren Cheng, Yi-Shao Liu, Allen Timothy Chang, Ching-Ray Chen, Yeh-Tseng Li, Wen-Hsiang Lin