Abstract: Embodiments of the present invention provide methods, systems, apparatuses, and computer program products for determining the contact edge roughness of a contact hole etched in a wafer. One embodiment provides a method comprising acquiring image data corresponding to the hole; based at least in part on the image data, determining a hole profile; determining an ideal shape for the hole based at least in part on the hole profile; and determining the contact edge roughness based at least in part on the hole profile and ideal shape. The hole profile may be configured to describe a distance from a reference point of the contact hole to an edge of the contact hole for each of a predetermined set of angles and the ideal shape may be described by a distance from a reference point of the ideal shape to an edge of the ideal shape for each predetermined angle.

Abstract: Methods for testing a special pattern and testing a probe card defect in wafer testing are provided. In the method for testing the special pattern, a wafer is divided into multiple testing partitions, in which each of the testing partitions includes multiple dies. The dies in each testing partition of the wafer are respectively tested by multiple sites of the probe card to obtain a testing map. Then, a number of the dies having defects and a number of the dies without defect within each of the testing partitions in the testing map are accumulated to construct chi-square test and calculate a maximum P-value. Finally, it is determined whether a minimum of the maximum P-values of all of the testing partitions is smaller than a certain predetermined threshold. If the minimum is smaller than the threshold, it is determined that the testing map of the wafer contains the special pattern.

Abstract: Methods for testing a special pattern and testing a probe card defect in wafer testing are provided. In the method for testing the special pattern, a wafer is divided into multiple testing partitions, in which each of the testing partitions includes multiple dies. The dies in each testing partition of the wafer are respectively tested by multiple sites of the probe card to obtain a testing map. Then, a number of the dies having defects and a number of the dies without defect within each of the testing partitions in the testing map are accumulated to construct chi-square test and calculate a maximum P-value. Finally, it is determined whether a minimum of the maximum P-values of all of the testing partitions is smaller than a certain predetermined threshold. If the minimum is smaller than the threshold, it is determined that the testing map of the wafer contains the special pattern.