Patents by Inventor Ching-San Tao
Ching-San Tao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11482651Abstract: The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.Type: GrantFiled: June 12, 2020Date of Patent: October 25, 2022Assignee: EPISTAR CORPORATIONInventors: Cheng-Nan Han, Tsung-Xian Lee, Min-Hsun Hsieh, Hung-Hsuan Chen, Hsin-Mao Liu, Hsing-Chao Chen, Ching-San Tao, Chih-Peng Ni, Tzer-Perng Chen, Jen-Chau Wu
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Publication number: 20200313051Abstract: The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.Type: ApplicationFiled: June 12, 2020Publication date: October 1, 2020Inventors: Cheng-Nan HAN, Tsung-Xian LEE, Min-Hsun HSIEH, Hung-Hsuan CHEN, Hsin-Mao LIU, Hsing-Chao CHEN, Ching-San TAO, Chih-Peng NI, Tzer- Perng CHEN, Jen-Chau WU
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Patent number: 10686106Abstract: The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.Type: GrantFiled: May 7, 2018Date of Patent: June 16, 2020Assignee: EPISTAR CORPORATIONInventors: Cheng-Nan Han, Tsung-Xian Lee, Min-Hsun Hsieh, Hung-Hsuan Chen, Hsin-Mao Liu, Hsing-Chao Chen, Ching-San Tao, Chih-Peng Ni, Tzer-Perng Chen, Jen-Chau Wu
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Patent number: 10529898Abstract: An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.Type: GrantFiled: August 16, 2017Date of Patent: January 7, 2020Assignee: EPISTAR CORPORATIONInventors: Cheng-Nan Han, Tsung-Xian Lee, Min-Hsun Hsieh, Hung-Hsuan Chen, Hsin-Mao Liu, Hsing-Chao Chen, Ching San Tao, Chih-Peng Ni, Tzer-Perng Chen, Jen-Chau Wu, Masafumi Sano, Chih-Ming Wang
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Publication number: 20180254391Abstract: The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.Type: ApplicationFiled: May 7, 2018Publication date: September 6, 2018Inventors: Cheng-Nan HAN, Tsung-Xian LEE, Min-Hsun HSIEH, Hung-Hsuan CHEN, Hsin-Mao LIU, Hsing-Chao CHEN, Ching-San TAO, Chih-Peng NI, Tzer- Perng CHEN, Jen-Chau WU
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Patent number: 9893244Abstract: An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.Type: GrantFiled: September 18, 2015Date of Patent: February 13, 2018Assignee: EPISTAR CORPORATIONInventors: Cheng-Nan Han, Tsung-Xian Lee, Min-Hsun Hsieh, Hung-Hsuan Chen, Hsin-Mao Liu, Hsing-Chao Chen, Ching San Tao, Chih-Peng Ni, Tzer-Perng Chen, Jen-Chau Wu, Masafumi Sano, Chih-Ming Wang
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Patent number: 9876139Abstract: A light-emitting device, comprises a light-emitting stacked layer comprising a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer and comprising a first plurality of cavities; a first dielectric layer formed on a first part of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first dielectric layer and on a second part of the second conductivity type semiconductor layer, the first transparent conductive oxide layer including a first portion in contact with the first dielectric layer and including a second portion in contact with the upper surface of the second conductivity type semiconductor layer; a first electrode formed on the first portion; and a first reflective metal layer formed between the first transparent conductive oxide layer and the first electrode.Type: GrantFiled: November 7, 2016Date of Patent: January 23, 2018Assignee: EPISTAR CORPORATIONInventors: Tzu-Chieh Hsu, Ching-San Tao, Chen Ou, Min-Hsun Hsieh, Chao-Hsing Chen
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Publication number: 20180019382Abstract: An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.Type: ApplicationFiled: September 18, 2015Publication date: January 18, 2018Inventors: Cheng-Nan HAN, Tsung-Xian LEE, Min-Hsun HSIEH, Hung-Hsuan CHEN, Hsin-Mao LIU, Hsing-Chao CHEN, Ching San TAO, Chih-Peng NI, Tzer-Perng CHEN, Jen-Chau WU, Masafumi SANO, Chih-Ming WANG
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Publication number: 20170365750Abstract: An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.Type: ApplicationFiled: August 16, 2017Publication date: December 21, 2017Inventors: Cheng-Nan HAN, Tsung-Xian LEE, Min-Hsun HSIEH, Hung-Hsuan CHEN, Hsin-Mao LIU, Hsing-Chao CHEN, Ching San TAO, Chih-Peng NI, Tzer-Perng CHEN, Jen-Chau WU, Masafumi SANO, Chih-Ming WANG
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Patent number: 9741905Abstract: An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.Type: GrantFiled: September 18, 2015Date of Patent: August 22, 2017Assignee: Epistar CorporationInventors: Cheng-Nan Han, Tsung-Xian Lee, Min-Hsun Hsieh, Hung-Hsuan Chen, Hsin-Mao Liu, Hsing-Chao Chen, Ching San Tao, Chih-Peng Ni, Tzer-Perng Chen, Jen-Chau Wu, Masafumi Sano, Chih-Ming Wang
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Publication number: 20170054056Abstract: A light-emitting device, comprises a light-emitting stacked layer comprising a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer and comprising a first plurality of cavities; a first dielectric layer formed on a first part of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first dielectric layer and on a second part of the second conductivity type semiconductor layer, the first transparent conductive oxide layer including a first portion in contact with the first dielectric layer and including a second portion in contact with the upper surface of the second conductivity type semiconductor layer; a first electrode formed on the first portion; and a first reflective metal layer formed between the first transparent conductive oxide layer and the first electrode.Type: ApplicationFiled: November 7, 2016Publication date: February 23, 2017Inventors: Tzu-Chieh HSU, Ching-San TAO, Chen OU, Min-Hsun HSIEH, Chao-Hsing CHEN
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Patent number: 9530940Abstract: A light-emitting device, comprises a light-emitting stacked layer comprising a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer and comprising a first plurality of cavities; a first planarization layer formed on a first part of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and on a second part of the second conductivity type semiconductor layer, the first transparent conductive oxide layer including a first portion in contact with the first planarization layer and including a second portion in contact with the upper surface of the second conductivity type semiconductor layer; a first electrode formed on the first portion; and a first reflective metal layer formed between the first transparent conductive oxide layer and the first electrode.Type: GrantFiled: January 5, 2015Date of Patent: December 27, 2016Assignee: EPISTAR CORPORATIONInventors: Tzu-Chieh Hsu, Ching-San Tao, Chen Ou, Min-Hsun Hsieh, Chao-Hsing Chen
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Publication number: 20160013371Abstract: An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.Type: ApplicationFiled: September 18, 2015Publication date: January 14, 2016Inventors: Cheng-Nan HAN, Tsung-Xian LEE, Min-Hsun HSIEH, Hung-Hsuan CHEN, Hsin-Mao LIU, Hsing-Chao CHEN, Ching San TAO, Chih-Peng NI, Tzer-Perng CHEN, Jen-Chau WU, Masafumi SANO, Chih-Ming WANG
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Patent number: 9231024Abstract: A light-emitting element includes: a substrate being a monocrystalline structure, comprising a plurality of recesses; and a plurality of first light-emitting stacks formed in the recesses respectively.Type: GrantFiled: September 23, 2011Date of Patent: January 5, 2016Assignee: EPISTAR CORPORATIONInventors: Ching-San Tao, Ting-Chia Ko, De-Shan Kuo, Tsun-Kai Ko
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Patent number: 9142740Abstract: An optoelectronic element includes an optoelectronic unit having a first top surface; a first metal layer on the first top surface; a first transparent structure surrounding the optoelectronic unit and exposing the first top surface; and a first contact layer on the first transparent structure, including a connective part electrically connected with the first metal layer.Type: GrantFiled: May 2, 2013Date of Patent: September 22, 2015Assignee: EPISTAR CORPORATIONInventors: Cheng-Nan Han, Tsung-Xian Lee, Min-Hsun Hsieh, Hung-Hsuan Chen, Hsin-Mao Liu, Hsing-Chao Chen, Ching-San Tao, Chih-Peng Ni, Tzer-Perng Chen, Jen-Chau Wu, Masafumi Sano, Chih-Ming Wang
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Publication number: 20150214449Abstract: The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.Type: ApplicationFiled: April 6, 2015Publication date: July 30, 2015Inventors: Cheng-Nan HAN, Tsung-Xian LEE, Min-Hsun HSIEH, Hung-Hsuan CHEN, Hsin-Mao LIU, Hsing-Chao CHEN, Ching-San TAO, Chih-Peng NI, Tzer- Perng CHEN, Jen-Chau WU
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Publication number: 20150137167Abstract: A light-emitting device, comprises a light-emitting stacked layer comprising a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer and comprising a first plurality of cavities; a first planarization layer formed on a first part of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and on a second part of the second conductivity type semiconductor layer, the first transparent conductive oxide layer including a first portion in contact with the first planarization layer and including a second portion in contact with the upper surface of the second conductivity type semiconductor layer; a first electrode formed on the first portion; and a first reflective metal layer formed between the first transparent conductive oxide layer and the first electrode.Type: ApplicationFiled: January 5, 2015Publication date: May 21, 2015Inventors: Tzu-Chieh Hsu, Ching-San Tao, Chen Ou, Min-Hsun Hsieh, Chao-Hsing Chen
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Patent number: 9000461Abstract: An optoelectronic element includes an optoelectronic unit having a first top surface, a first bottom surface opposite to the first top surface, and a lateral surface between the first top surface and the first bottom surface; a first transparent structure covering the lateral surface and exposing the first top surface of the optoelectronic unit; a first insulating layer on the first top surface and the first transparent structure; a second insulating layer on the first insulating layer; a first opening through the first insulating layer and the second insulating layer; and a first conductive layer on the second insulating layer and electrically connecting to the optoelectronic unit via the first opening.Type: GrantFiled: August 9, 2011Date of Patent: April 7, 2015Assignee: Epistar CorporationInventors: Cheng-Nan Han, Tsung-Xian Lee, Min-Hsun Hsieh, Hung-Hsuan Chen, Hsin-Mao Liu, Hsing-Chao Chen, Ching-San Tao, Chih-Peng Ni, Tzer-Perng Chen, Jen-Chau Wu
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Patent number: 8866174Abstract: A light-emitting device having a light-emitting stacked layer with a first conductivity type semiconductor layer is provided. A light-emitting layer is formed on the first conductivity type semiconductor layer. A second conductivity type semiconductor layer is formed on the light-emitting layer. The upper surface of the second conductivity type semiconductor layer is a textured surface. A planarization layer is formed on a first part of the second conductivity type semiconductor layer. A transparent conductive oxide layer is formed on the planarization layer and a second part of the second conductivity type semiconductor layer, including a first portion on the planarization layer and a second portion having a first plurality of cavities on the second conductivity type semiconductor layer. An electrode is formed on the first portion of the transparent conductive oxide layer, and a reflective metal layer is formed between the transparent conductive oxide layer and the electrode.Type: GrantFiled: February 20, 2013Date of Patent: October 21, 2014Assignee: Epistar CorporationInventors: Tzu-Chieh Hsu, Ching-San Tao, Chen Ou, Min-Hsun Hsieh, Chao Hsing Chen
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Publication number: 20130313594Abstract: An optoelectronic element includes an optoelectronic unit having a first top surface; a first metal layer on the first top surface; a first transparent structure surrounding the optoelectronic unit and exposing the first top surface; and a first contact layer on the first transparent structure, including a connective part electrically connected with the first metal layer.Type: ApplicationFiled: May 2, 2013Publication date: November 28, 2013Applicant: EPISTAR CORPORATIONInventors: Cheng-Nan HAN, Tsung-Xian Lee, Min-Hsun Hsieh, Hung-Hsuan Chen, Hsin-Mao Liu, Hsing-Chao Chen, Ching-San Tao, Chih-Peng Ni, Tzer-Perng Chen, Jen-Chau Wu, Masafumi Sano, Chih-Ming Wang