Abstract: A light-emitting diode includes a light-emitting epitaxial layer having a first surface as a light-emitting surface and a second surface opposing the first surface, a first type semiconductor layer, an active layer, and a second type semiconductor layer; a transparent dielectric layer located on the second surface and in direct contact with the light-emitting epitaxial laminated layer, and having conductive through-holes therein; a transparent conductive layer located on one side surface of the transparent dielectric layer that is distal from the light-emitting epitaxial laminated layer; and a metal reflective layer located on one side surface of the transparent conductive layer that is distal from the transparent dielectric layer; wherein the transparent dielectric layer includes a first layer and a second layer; and wherein the first layer is thicker than the second layer, and a refractivity of the first layer is less than a refractivity of the second layer.

Abstract: A light-emitting diode includes a light-emitting epitaxial layer having a first surface as a light-emitting surface and a second, opposing, surface, including a first type semiconductor layer, an active layer, and a second type semiconductor layer; a metal reflective layer disposed over the second surface; and a protective layer formed seamlessly on a surface of the metal reflective layer and on a side wall of the metal reflective layer.

Abstract: A light-emitting diode includes a PN junction light-emitting portion over a substrate; wherein the PN junction light-emitting portion includes an alternating-layer structure of alternating a strained light-emitting layer and a barrier layer, wherein the strained light-emitting layer with a component formula of GaXIn(1-x)AsY1P(1-Y), 0<X<1 and 0<Y?0.05, and the barrier layer has a component formula of (AlaGa1-A)bIn(1-b)P, 0.3?a?1 and 0<b<1; when a current of 350 mA flows through the PN junction light-emitting portion in forward direction, the light-emitting diode has an output power at least 202.2 mW.

Abstract: A light-emitting diode includes a PN junction light-emitting portion over a substrate; wherein the PN junction light-emitting portion includes an alternating-layer structure of alternating a strained light-emitting layer and a barrier layer, wherein the strained light-emitting layer with a component formula of GaXIn(1-X)AsY1P(1-Y), 0<X<1 and 0<Y?0.05, and the barrier layer has a component formula of (AlaGa1-A)bIn(1-b)P, 0.3?a?1 and 0<b<1; when a current of 350 mA flows through the PN junction light-emitting portion in forward direction, the light-emitting diode has an output power at least 202.2 mW.

Abstract: A light-emitting diode includes a light-emitting epitaxial layer having a first surface as a light-emitting surface and a second, opposing, surface, including a first type semiconductor layer, an active layer, and a second type semiconductor layer; a metal reflective layer disposed over the second surface; and a protective layer formed seamlessly on a surface of the metal reflective layer and on a side wall of the metal reflective layer.

Abstract: An epitaxial wafer for plant lighting light-emitting diodes (LED), the epitaxial wafer includes: a growth substrate; a first red-light epitaxial laminated layer; a distributed Bragg reflector (DBR) semiconductor laminated layer; and a second red-light epitaxial laminated layer; wherein: the first red-light epitaxial laminated layer comprises a first N-type ohmic contact layer, a first N-type covering layer, a first light-emitting layer, a first P-type covering layer, and a first P-type ohmic contact layer; and the second red-light epitaxial laminated layer comprises a second N-type ohmic contact layer, a second N-type covering layer, a second light-emitting layer, a second P-type covering layer, and a second P-type ohmic contact layer.

Abstract: A light-emitting diode includes a light-emitting epitaxial laminated layer having a first surface and a second, opposing, surface, including an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer; an omnidirectional reflector structure formed on the second surface of the light-emitting epitaxial laminated layer, including a transparent dielectric layer located on the second surface of the light-emitting epitaxial laminated layer and having conductive holes therein; a first transparent adhesive layer on one side surface of the transparent dielectric layer that is distal from the light-emitting epitaxial laminated layer; a second transparent adhesive layer on one side surface of the first transparent adhesive layer that is distal from the transparent dielectric layer; and a metal reflective layer on one side surface of the second transparent adhesive layer that is distal from the first transparent adhesive layer.

Abstract: A light-emitting diode includes a light-emitting epitaxial laminated layer having a first surface and a second, opposing, surface, including an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer; an omnidirectional reflector structure formed on the second surface of the light-emitting epitaxial laminated layer, including a transparent dielectric layer located on the second surface of the light-emitting epitaxial laminated layer and having conductive holes therein; a first transparent adhesive layer on one side surface of the transparent dielectric layer that is distal from the light-emitting epitaxial laminated layer; a second transparent adhesive layer on one side surface of the first transparent adhesive layer that is distal from the transparent dielectric layer; and a metal reflective layer on one side surface of the second transparent adhesive layer that is distal from the first transparent adhesive layer.

Abstract: A fabrication method of a vertical light-emitting diode, such as an infrared light-emitting diode, includes heating the reaction chamber during growth of the reflective layer to pre-diffuse the metal molecules of the reflective layer into the epitaxial layer. As a result, the diffusion of the metal molecules in the reflective layer into the epitaxial layer during high-temperature fusion of the reflective layer and the epitaxial layer slows down, and the blackness level of conventional ohm contact holes is reduced.

Abstract: A light-emitting diode includes a light-emitting epitaxial laminated layer and an omnidirectional reflector structure. The light-emitting epitaxial laminated layer has a first surface and an opposing second surface, including an n-type semi-conductive layer, a light emitting layer and a p-type semiconductor layer.

Abstract: A light emitting diode includes a segmented quantum well formed via selective growth method to avoid re-absorption effect of photons in the LED internal quantum well. This improves external extraction efficiency and increases luminance. The light emitting diode includes a first semiconductor layer, an active layer, and a second semiconductor layer, wherein, the upper surface of the first semiconductor layer has a first growth region and a second growth region; the active layer is formed only in the first growth region via selective epitaxial growth; and the second semiconductor layer covers the active layer and the second growth region of the first semiconductor layer via epitaxial growth.

Abstract: A light-emitting diode chip includes a first semiconductor layer, a second semiconductor layer and an active layer between them; an dielectric layer having a conductive through-hole array over the lower surface of the light-emitting epitaxial laminated layer; a metal conductive layer over the lower surface of the dielectric layer, which fills up the conductive through-hole, and forms ohmic contact with the light-emitting epitaxial laminated layer; a conductive substrate over the lower surface of the metal conductive layer for supporting the light-emitting epitaxial laminated layer; a first electrode comprising a bonding pad electrode and a finger-shape electrode over the upper surface of the light-emitting epitaxial laminated layer, wherein, a rotation angle is formed between the conductive through-hole array and the finger-shape electrode, which is selected to prevent a preferred number of conductive through-holes from being shielded by the bonding pad electrode and the finger-shape electrode.

Abstract: A high-brightness light-emitting diode with surface microstructure and preparation and screening methods thereof are provided. The ratio of total roughened surface area of light transmission surface of a light emitting diode to vertically projected area is greater than 1.5, and the peak density of light transmission surface is not less than 0.3/um2. The higher the ratio of total roughened surface area of an epitaxial wafer to vertically projected area and the higher the number of peak over the critical height within a unit area, the more beneficial to improve light extraction efficiency of the epitaxial wafer. As a result, light extraction efficiency of the epitaxial wafer is greatly improved.

Abstract: An epitaxial wafer for plant lighting light-emitting diodes (LED), the epitaxial wafer includes: a growth substrate; a first red-light epitaxial laminated layer; a distributed Bragg reflector (DBR) semiconductor laminated layer; and a second red-light epitaxial laminated layer; wherein: the first red-light epitaxial laminated layer comprises a first N-type ohmic contact layer, a first N-type covering layer, a first light-emitting layer, a first P-type covering layer, and a first P-type ohmic contact layer; and the second red-light epitaxial laminated layer comprises a second N-type ohmic contact layer, a second N-type covering layer, a second light-emitting layer, a second P-type covering layer, and a second P-type ohmic contact layer.

Abstract: A light-emitting diode (LED) for plant illumination includes a substrate, and a PN-junction light-emitting portion over the substrate. The light-emitting portion has a strained light-emitting layer with a component formula of GaXIn(1-X)AsYP(1-Y) (0<X<1 and 0<Y<1), and a barrier layer, forming a 2˜40-pair alternating-layer structure with the strained light-emitting layer.

Abstract: A light-emitting diode includes a light-emitting epitaxial laminated layer and an omnidirectional reflector structure. The light-emitting epitaxial laminated layer has a first surface and an opposing second surface, including an n-type semi-conductive layer, a light emitting layer and a p-type semiconductor layer.

Abstract: A bonding structure for III-V group compound devices includes a first metal bonding layer and a second metal bonding layer. The second metal bonding layer is internally embedded with a nano-conductive film, and the nano-conductive film, with thermal conductivity higher than that of the second metal bonding layer, is completely wrapped by the second metal bonding layer for low temperature bonding and fast heat dissipation. Such a bonding structure can be employed by a light-emitting diode.

Abstract: A light-emitting diode (LED) structure and a fabrication method thereof effectively enhance external extraction efficiency of the LED, which includes: a light-emitting epitaxial laminated layer, a transparent dielectric layer, and a transparent conductive layer forming a reflectivity-enhancing system; and a metal reflective layer. The light-emitting epitaxial laminated layer has opposite first and second surfaces, and includes an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer. The transparent dielectric layer is on the second surface, inside which are conductive holes. The transparent conductive layer is located on one side surface of the transparent dielectric layer distal from the light-emitting epitaxial laminated layer. The metal reflective layer is located on one side surface of the transparent conductive layer distal from the transparent dielectric layer.

Abstract: A light emitting diode includes: a substrate; a semiconductor light emitting laminate on the substrate, including from bottom up a first semiconductor layer, an active layer, and a second semiconductor layer electrically dissimilar to the first semiconductor layer; a transparent conductive layer with an opening portion; the first electrode electrically connected with the first semiconductor layer; and the second electrode electrically connected with the second semiconductor layer; the second electrode fills the opening portion, and the position where the second electrode contacts the transparent conductive layer is arranged with a recessed portion, and the second electrode is embedded in the transparent conductive layer.

Abstract: A light emitting diode includes a segmented quantum well formed via selective growth method to avoid re-absorption effect of photons in the LED internal quantum well. This improves external extraction efficiency and increases luminance. The light emitting diode includes a first semiconductor layer, an active layer, and a second semiconductor layer, wherein, the upper surface of the first semiconductor layer has a first growth region and a second growth region; the active layer is formed only in the first growth region via selective epitaxial growth; and the second semiconductor layer covers the active layer and the second growth region of the first semiconductor layer via epitaxial growth.