Patents by Inventor Ching-Sheng Chu

Ching-Sheng Chu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process to improve performance for metal-insulator-metal (MIM) capacitors
    Patent number: 9257498
    Abstract: Some embodiments relate to a metal-insulator-metal (MIM) capacitor, which includes a capacitor a capacitor bottom metal (CBM) electrode, a high k dielectric layer arranged over the CBM electrode, and a capacitor top metal (CTM) electrode arranged over the high k dielectric layer. In some embodiments, the MIM capacitor comprises CTM protective sidewall regions, which extend along vertical sidewall surfaces of the CTM electrode, and protect the CTM electrode from leakage, premature voltage breakdown, or burn out, due to metallic residue or etch damage formed on the sidewalls during one or more etch process(es) used to form the CTM electrode. In some embodiments, the MIM capacitor comprises CBM protective sidewall regions, which extend along vertical sidewall surfaces of the CBM electrode. In some embodiments, the MIM capacitor comprises both CBM and CTM protective sidewall regions.
    Type: Grant
    Filed: August 4, 2014
    Date of Patent: February 9, 2016
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chern-Yow Hsu, Shih-Chang Liu, Ching-Sheng Chu, Chia-Shiung Tsai
  • Process to Improve Performance for Metal-Insulator-Metal (MIM) Capacitors
    Publication number: 20160035817
    Abstract: Some embodiments relate to a metal-insulator-metal (MIM) capacitor, which includes a capacitor a capacitor bottom metal (CBM) electrode, a high k dielectric layer arranged over the CBM electrode, and a capacitor top metal (CTM) electrode arranged over the high k dielectric layer. In some embodiments, the MIM capacitor comprises CTM protective sidewall regions, which extend along vertical sidewall surfaces of the CTM electrode, and protect the CTM electrode from leakage, premature voltage breakdown, or burn out, due to metallic residue or etch damage formed on the sidewalls during one or more etch process(es) used to form the CTM electrode. In some embodiments, the MIM capacitor comprises CBM protective sidewall regions, which extend along vertical sidewall surfaces of the CBM electrode. In some embodiments, the MIM capacitor comprises both CBM and CTM protective sidewall regions.
    Type: Application
    Filed: August 4, 2014
    Publication date: February 4, 2016
    Inventors: Chern-Yow Hsu, Shih-Chang Liu, Ching-Sheng Chu, Chia-Shiung Tsai