Abstract: A manufacturing method of the circuit board includes the following. The third substrate has an opening and includes a first, a second and a third dielectric layers. The opening penetrates the first and the second dielectric layers, and the opening is fully filled with the third dielectric layer. The first, the second and the third substrates are press-fitted so that the second substrate is located between the first and the third substrates. Multiple conductive structures are formed so that the first, the second and the third substrates are electrically connected through the conductive structures to define a ground path. A conductive via structure is formed to penetrate the first substrate, the second substrate, and the third dielectric layer of the third substrate. The conductive via structure is electrically connected to the first and the third substrates to define a signal path. The ground path surrounds the signal path.

Abstract: The present invention provides a method of treating targeted abnormal cells that are resistant, refractory, insensitive, non-responsive, or inadequately responsive to an ingredient, as well as cytotoxic cells used therein, comprising administering an effective amount of the ingredient-complexed cytotoxic cells to a subject with the disease.

Abstract: The invention provides a multi-state sense amplifier, coupled to at least one memory cell and a plurality of reference cells. The source follower, coupled between a first node and the output terminal of the memory cell, clamps the voltage drop across the memory cell to generate a memory cell current flowing through the first node. The source follower circuit, coupled between a plurality of second nodes and the output terminals of the reference cells, clamps the voltage drops across the reference cells to generate a plurality of reference currents respectively flowing through the second nodes. The current mirror circuit, coupled to the first node and the second nodes, duplicates the memory cell current of the first node to affect the reference currents on the second nodes, thereby generating a memory cell voltage on the first node and a plurality of reference voltages on the second nodes.

Abstract: The invention provides a multi-state sense amplifier, coupled to at least one memory cell and a plurality of reference cells. The source follower, coupled between a first node and the output terminal of the memory cell, clamps the voltage drop across the memory cell to generate a memory cell current flowing through the first node. The source follower circuit, coupled between a plurality of second nodes and the output terminals of the reference cells, clamps the voltage drops across the reference cells to generate a plurality of reference currents respectively flowing through the second nodes. The current mirror circuit, coupled to the first node and the second nodes, duplicates the memory cell current of the first node to affect the reference currents on the second nodes, thereby generating a memory cell voltage on the first node and a plurality of reference voltages on the second nodes.