Abstract: The invention provides a photoresist coating method, which comprises the following steps: providing a wafer with a pattern on the wafer, placing the wafer on a spinner, injecting a photoresist on a central region of the wafer from a nozzle, and carrying out a spin coating step, the spin coating step comprises: turning on the spinner to rotate the spinner to a first rotation speed, and raising the first rotation speed to a second rotation speed, and performing a plurality of brakes during the process of maintaining the second rotation speed, so that the second rotation speed instantly drops to a third rotation speed, and then rises to the second rotation speed again.

Abstract: The invention provides a method for detecting the back surface of a wafer, which comprises providing a wafer and performing a detection step on the back surface of the wafer, wherein the detection step comprises capturing a gray scale map of the back surface of the wafer, finding out at least one defect of the back surface of the wafer according to a deviation of the gray scale map, and transmitting the data of the at least one defect back to a system, and the system performs a judgment step according to the data of the at least one defect.

Abstract: A method of performing optical proximity correction for preparing a mask projected onto a wafer by photolithography includes the following steps. An integrated circuit layout design including a first feature and a second feature is obtained, wherein the first feature overlaps a first boundary of two structures in the wafer. An edge of the first feature close to the second feature pertaining to a specific trend section of an experimental chart having trend sections is recognized. An optical proximity correction value is evaluated for the edge through a computer system according to a rule corresponding to the specific trend section. The layout design is compensated with the optical proximity correction value.

Abstract: A method of making a photomask layout is provided. A graphic data of a photomask is provided. The graphic data includes at least one rectangular pattern. A correction step is performed to the graphic data by using a computer. The correction step includes adding a substantially ring-shaped pattern inside the rectangular pattern. A method of forming a photomask by using the photomask layout obtained by the said method is also provided. In an embodiment, the photomask is suitable for defining micro-lenses of a solid-state image sensor.

Abstract: A method of performing optical proximity correction for preparing a mask projected onto a wafer by photolithography includes the following steps. An integrated circuit layout design including a first feature and a second feature is obtained, wherein the first feature overlaps a first boundary of two structures in the wafer. An edge of the first feature close to the second feature pertaining to a specific trend section of an experimental chart having trend sections is recognized. An optical proximity correction value is evaluated for the edge through a computer system according to a rule corresponding to the specific trend section. The layout design is compensated with the optical proximity correction value.

Abstract: A method of making a photomask layout is provided. A graphic data of a photomask is provided. The graphic data includes at least one rectangular pattern. A correction step is performed to the graphic data by using a computer. The correction step includes adding a substantially ring-shaped pattern inside the rectangular pattern. A method of forming a photomask by using the photomask layout obtained by the said method is also provided. In an embodiment, the photomask is suitable for defining micro-lenses of a solid-state image sensor.

Abstract: A method of performing optical proximity correction for preparing a mask projected onto a wafer by photolithography includes the following steps. An integrated circuit layout design comprising a first feature and a second feature is obtained, wherein the first feature overlaps a first boundary of two structures in the wafer. An edge of the first feature close to the second feature pertaining to a specific trend section of an experimental chart having trend sections is recognized. An optical proximity correction value is evaluated for the edge through a computer system by a rule corresponding to the specific trend section. The layout design is compensated with the optical proximity correction value.

Abstract: In a monitoring method of an exposure apparatus, a top critical dimension (TCD) and a bottom critical dimension (BCD) of the test pattern formed on a photo-sensitive material layer are measured. A dose deviation (?E) and a focus deviation (?F) are calculated by following equations: TCD+BCD=??E+(TCD0+BCD0) TCD?BCD=?1?F+?2?F3 Here, ?, ?1 and ?2 are constants, ?E=E?E0, ?F=F?F0, E represents a real exposure dose, F represents a real exposure focus, E0 represents a dose defined when a middle critical dimension of the test pattern is equal to a predetermined value, F0 represents a focus defined when TCD of the test pattern is equal to BCD thereof, and TCD0 and BCD0 are theoretical values in case of E0 and F0.

Abstract: In a monitoring method of an exposure apparatus, a top critical dimension (TCD) and a bottom critical dimension (BCD) of the test pattern formed on a photo-sensitive material layer are measured. A dose deviation (?E) and a focus deviation (?F) are calculated by following equations: TCD+BCD=??E+(TCD0+BCD0) TCD?BCD=?1?F+?2?F3 Here, ?, ?1 and ?2 are constants, ?E=E?E0, ?F=F?F0, E represents a real exposure dose, F represents a real exposure focus, E0 represents a dose defined when a middle critical dimension of the test pattern is equal to a predetermined value, F0 represents a focus defined when TCD of the test pattern is equal to BCD thereof, and TCD0 and BCD0 are theoretical values in case of E0 and F0.