Abstract: A solar cell includes a semiconductor wafer, plural finger electrodes, at least one bus electrode, and at least one finger loop electrode. The semiconductor wafer has a light-receiving surface. The finger electrodes are arranged along a first direction and disposed on the light-receiving surface. The bus electrode is arranged along a second direction and disposed on the light-receiving surface, and the bus electrode is connected with the finger electrodes, in which the second direction is perpendicular to the first direction. The finger loop electrode is substantially arranged along the second direction and disposed on the light-receiving surface, and the finger loop electrode is connected to at least two of the finger electrodes, in which the finger loop electrode has a shape of non-square periodic wave.

Abstract: An electrically conductive ribbon, which is soldered on an electrically conductive busbar of a photovoltaic panel, includes a cooper core and a tin based solder. The tin based solder fully wraps an outer surface of the cooper core, and has a convex solder surface, which has a first curvature to be fitted with a second curvature of a concave solder surface of the electrically conductive busbar.

Abstract: A method of manufacturing a solar cell includes the following steps. An ion implantation process is performed to a first surface of a substrate to form a first doping layer. Then, the ion implantation process is performed to a second surface of the substrate to form a second doping layer. After that, an annealing process is performed to the structure formed by the substrate, the first doping layer and the second doping layer, and forming a first passivation layer on the first doping layer and a second passivation layer on the second doping layer by the annealing process. A third passivation layer is formed on the first passivation layer formed after the annealing process and a fourth passivation layer is formed on the second passivation layer formed after the annealing process. Afterward, conductive electrodes are formed on the third passivation layer and the fourth passivation layer, respectively.

Abstract: An electrically conductive ribbon, which is soldered on an electrically conductive busbar of a photovoltaic panel, includes a cooper core and a tin based solder. The tin based solder fully wraps an outer surface of the cooper core, and has a convex solder surface, which has a first curvature to be fitted with a second curvature of a concave solder surface of the electrically conductive busbar.

Abstract: A solar energy cell includes a photoelectric conversion layer, an anti-reflection layer and a plurality of electrical conductive channels. The anti-reflection layer is disposed on the photoelectric conversion layer. The electrical conductive channels are disposed on the anti-reflection layer and electrically connected with the photoelectric conversion layer, wherein the electrical conductive channels include a conductive paste and pigments to enable a color thereof to be substantially the same as a color of the anti-reflection layer.

Abstract: An electrically conductive ribbon, which is soldered on an electrically conductive busbar of a photovoltaic panel, includes a cooper core and a tin based solder. The tin based solder fully wraps an outer surface of the cooper core, and has a convex solder surface, which has a first curvature to be fitted with a second curvature of a concave solder surface of the electrically conductive busbar.

Abstract: A photovoltaic panel includes a photovoltaic array, an electrically conductive busbar, a plurality of electrically conductive fingers and an electrically conductive ribbon. The electrically conductive busbar is disposed on the photovoltaic array and having a plurality of connection ribs. The electrically conductive fingers are disposed on the photovoltaic array and connected with the connection ribs respectively. The electrically conductive ribbon is soldered on the electrically conductive busbar, wherein a gap is formed between each electrically conductive finger and the electrically conductive ribbon.

Abstract: A method of manufacturing a solar cell includes the following steps. An ion implantation process is performed to a first surface of a substrate to form a first doping layer. Then, the ion implantation process is performed to a second surface of the substrate to form a second doping layer. After that, an annealing process is performed to the structure formed by the substrate, the first doping layer and the second doping layer, and forming a first passivation layer on the first doping layer and a second passivation layer on the second doping layer by the annealing process. A third passivation layer is formed on the first passivation layer formed after the annealing process and a fourth passivation layer is formed on the second passivation layer formed after the annealing process. Afterward, conductive electrodes are formed on the third passivation layer and the fourth passivation layer, respectively.

Abstract: An electrically conductive ribbon, which is soldered on an electrically conductive busbar of a photovoltaic panel, includes a cooper core and a tin based solder. The tin based solder fully wraps an outer surface of the cooper core, and has a convex solder surface, which has a first curvature to be fitted with a second curvature of a concave solder surface of the electrically conductive busbar.

Abstract: A method for forming a polycide/oxide/polysilicon capacitor on a silicon wafer with improved dielectric stability and reliability is described wherein an in-situ high temperature anneal is applied to the wafer within a CVD reactor immediately prior to the deposition of the silicon oxide capacitor dielectric layer. The in-situ anneal causes sufficient fluorine outgassing of the polycide layer to prevent fluorine degradation of the subsequently deposited oxide capacitor dielectric. The capacitance of the completed capacitor is increased by as much as 10% when compared to a comparable not in-situ anneal conducted prior to the insertion of the wafer into the CVD reactor.