Abstract: The telco-grade server/Ethernet network switch is the most compacted-size design with a 1.5 U or 2 U height chassis. A high-speed backplane to connect with all boards, including server/Ethernet switch board, LAN port interface board, power supply board, management board and fan module board and hot-swappable feature supported. Two equal switches are accommodated within chassis to perform two independent switches or one switch with telco-grade to meet high reliability request, such as 99.999% reliability.

Abstract: The telco-grade server/Ethernet network switch is the most compacted-size design with a 1.5 U or 2 U height chassis. A high-speed backplane to connect with all boards, including server/Ethernet switch board, LAN port interface board, power supply board, management board and fan module board and hot-swappable feature supported. Two equal switches are accommodated within chassis to perform two independent switches or one switch with telco-grade to meet high reliability request, such as 99.999% reliability.

Abstract: A method for monitoring oxide film deposition is disclosed. The method utilizes monitor wafers having silicon nitride films thereon instead of bare wafers to monitor the growth of silicon oxide films in a furnace. The method for monitoring oxide film deposition includes the following steps. First of all, a monitor wafer having silicon nitride film and a process wafer are provided. Next an oxide layer is formed on the monitor wafer and the process wafer, and the thickness of the oxide layer is controlled substantially equally on the monitor wafer and the process wafer. Then the thickness of the oxide layer on the monitor wafer and the process wafer is measured.

Abstract: A method for making a macromolecular laminate is disclosed. Firstly, a high solid-content polyurethane resin is prepared. The high solid-content polyurethane resin has a solid content higher than 80% by weight and a viscosity from 20000 to 60000 cps/30° C. The high solid-content polyurethane resin is liquid at the room temperature. The high solid-content polyurethane resin is mixed with additives to form a first type of polyurethane resin compound with a solid content higher than 50% by weight and a viscosity from 20000 to 60000 cps/30° C. The first type of polyurethane resin compound is liquid at room temperature and has a pot life of at least three hours at room temperature. The first type of polyurethane resin compound is coated on a releasing paper to make a main layer. Then, the releasing paper is removed from the main layer to make a laminate.

Abstract: A macromolecular laminate includes a main layer made of a first type of polyurethane resin compound that is liquid at room temperature. The first type of polyurethane resin compound is made through mixing polyurethane resin with solid content higher than 50% by weight with additives. An auxiliary layer may be formed on the main layer and made of a second type of polyurethane resin compound different from the first type of polyurethane resin compound.

Abstract: Artificial leather includes a substrate and a coating of a first elastomeric resin provided on the substrate. The substrate contains a second elastomeric resin evenly spread in the substrate. The first elastomeric resin forming the coating is identical to the second elastomeric resin in the substrate. The substrate includes a first porous structure. The coating includes a second porous structure contiguous to the first porous structure of the substrate. Preferably, the substrate has a density larger than that of the coating.

Abstract: A method of forming a silicon nitride layer is provided. A deposition furnace having an outer tube, a wafer boat, a gas injector and a uniform gas injection apparatus is provided. The wafer boat is positioned within the outer tube for carrying a plurality of wafers. The gas injector is positioned between the outer tube and the wafer boat. Similarly, the uniform gas injection apparatus is positioned between the outer tube and the wafer boat. Gas injected into the uniform gas injection apparatus is uniformly distributed throughout the entire deposition furnace. To form a silicon nitride layer on each wafer, a silicon-containing gas is passed into the deposition furnace via the gas injector and a nitrogen-mixed carrier gas is passed into the deposition furnace via the uniform gas injection apparatus.

Abstract: A method for producing an environmental friendly artificial leather product includes coating a first solvent-free elastomer resin composition on a releasing paper to form a top layer, coating a polyurethane resin composition containing more than 50% by weight solid content on the top layer to form an intermediate layer, coating a second solvent-free elastomer resin composition on the intermediate layer to form an adhesive layer, and finally applying a substrate on the adhesive layer, and peeling the releasing paper.

Abstract: A method for manufacturing an artificial leather comprises the following steps. First, ultramicrofiber-forming fibers having an islands-in-sea type cross-sectional configuration are formed by blend spinning or conjugate spinning. Secondly, a porous reinforcement sheet of low compactness is formed from polyester, polyurethane or polyolefin by spunbonding, meltblowing or calendering. Next, the ultramicrofibers are entangled with the reinforcement sheet by needle punching or spunlace to form the complex reinforced ultramicrofiber nonwoven fabric. The nonwoven is impregnated or coated with an elastomer resin composition, and then subjected to a coagulating process, a washing process, a drying process and a removing process to produce a semi-product leather. Finally, the semi-product leather is then processed to produce the artificial leather.

Abstract: A method for monitoring oxide film deposition is disclosed. The method utilizes silicon wafers having silicon nitride films thereon instead of bare silicon wafers to monitor the growth of silicon oxide/dioxide films in a furnace. The method for monitoring oxide film deposition comprises the following steps. First of all, a wafer having silicon nitride film and a silicon wafer are provided. Next an oxide layer is formed on the wafer and the silicon wafer, and the thickness of the oxide layer is controlled substantially equally on the wafer and the silicon wafer. Then the thickness of the oxide layer on the wafer and the silicon wafer is measured.

Abstract: A method for producing artificial leather includes providing a substrate with an upper surface and a lower surface, providing a coating of an elastomeric resin on the upper surface of the substrate, and providing a pressure difference between the upper and lower surfaces of the substrate so as to cause infiltration of the elastomeric resin into the substrate from the upper surface to the lower surface.

Abstract: A method for producing an artificial leather includes mixed spinning an island polymer and a sea polymer having a different dissolving property from that of the island polymer at a predetermined temperature, producing a non-woven substrate from the fiber obtained, immersing the non-woven substrate into a polymer, dissolving and removing the sea polymer in the non-woven substrate to obtain an artificial leather as a semi-finished product, and polishing the surface of the artificial leather to obtain an artificial leather having excellent dyeability and advanced fluff-like property. The ratio of melt flow index of the sea polymer to relative viscosity of the island polymer is about 20 to about 55, in which the relative viscosity of the island polymer is about 2.7 to about 3.5 and the weight percentage of the sea polymer relative to the sum of the sea polymer and the island polymer is about 30% to about 70%.

Abstract: A method of forming a silicon nitride layer is provided. A deposition furnace having an outer tube, a wafer boat, a gas injector and a uniform gas injection apparatus is provided. The wafer boat is positioned within the outer tube for carrying a plurality of wafers. The gas injector is positioned between the outer tube and the wafer boat. Similarly, the uniform gas injection apparatus is positioned between the outer tube and the wafer boat. Gas injected into the uniform gas injection apparatus is uniformly distributed throughout the entire deposition furnace. To form a silicon nitride layer on each wafer, a silicon-containing gas is passed into the deposition furnace via the gas injector and a nitrogen-mixed carrier gas is passed into the deposition furnace via the uniform gas injection apparatus.

Abstract: An environmental friendly artificial leather product includes a substrate, an adhesive layer, an intermediate layer and a top layer. The artificial leather resides in that the top layer and adhesive layer is formed of a solvent-free elastomer resin composition and the intermediate layer provided between the top layer and adhesive layer is formed of a polyurethane resin composition containing more than 50% by weight solid content of polyurethane resin. A method for producing an environmental friendly artificial leather product includes coating a first solvent-free elastomer resin composition on a releasing paper to form a top layer, coating a polyurethane resin composition containing more than 50% by weight solid content on the top layer to form an intermediate layer, coating a second solvent-free elastomer resin composition on the intermediate layer to form an adhesive layer, and finally applying a substrate on the adhesive layer, and peeling the releasing paper.

Abstract: A method for making a silicon oxide/silicon nitride/silicon oxide structure includes forming a tunnel oxide layer and a silicon nitride layer over a substrate; annealing the silicon nitride layer; forming a silicon oxide layer over the annealed silicon nitride layer by high temperature low pressure chemical vapor deposition; depositing a first gate layer over the silicon oxide layer; patterning to form a silicon oxide/silicon nitride/silicon oxide (ONO) structure; forming bit lines in the substrate adjacent the ONO structure; and annealing to form a thermal oxide over the bit lines.

Abstract: Artificial leather includes a substrate, a coating of a single type of elastomeric resin provided on the substrate and particles of the single type of elastomeric resin evenly spread into the substrate from the coating. The density of the substrate filled with the particles is greater than that of the coating.

Abstract: A method for making a macromolecular laminate is disclosed. Firstly, polyurethane resin with solid content higher than 50% is mixed with additives in order to form polyurethane resin compound that is liquid at the normal temperature. Then, the polyurethane resin compound is coated on releasing paper and dried. Then, the releasing paper is removed in order to make a substrate. Then, the substrate is put in a physical vapor deposition system in which metal is used as a target. Finally, the metal is sputtered to the substrate in order to form a metallic film, thus making a macromolecular laminate.

Abstract: A method for making a macromolecular laminate is disclosed. Firstly, polyurethane resin with solid content higher than 50% is mixed with additives in order to form polyurethane resin compound that is liquid at the normal temperature. Then, the polyurethane resin compound is coated on releasing paper and dried. Then, the releasing paper is removed in order to make a laminate.

Abstract: Artificial leather is provided blocking electromagnetic waves. The artificial leather includes a substrate and a blocking layer provided on the substrate. The blocking layer includes metal mixed with elastomeric resin. The metal is provided in the form of powder. The metal is copper, nickel or silver. The elastomeric resin is polyurethane, polyvinyl chloride, SBR, NBR, polyamide or acrylic.

Abstract: A method for making a silicon oxide/silicon nitride/silicon oxide structure includes forming a tunnel oxide layer and a silicon nitride layer over a substrate; annealing the silicon nitride layer; forming a silicon oxide layer over the annealed silicon nitride layer by high temperature low pressure chemical vapor deposition; depositing a first gate layer over the silicon oxide layer; patterning to form a silicon oxide/silicon nitride/silicon oxide (ONO) structure; forming bit lines in the substrate adjacent the ONO structure; and annealing to form a thermal oxide over the bit lines.