Abstract: A meniscus tear assisted determination system includes an image capturing device and a processor. The image capturing device is for capturing a target protocol of a subject, and the target protocol includes a plurality of target knee joint image sequences. The processor is signally connected to the image capturing device and includes a data preprocessing module and a meniscus tear assisted determination program. The data preprocessing module is for grouping the plurality of target knee joint image sequences and extracting a plurality of target coronal plane image sequences and a plurality of target sagittal plane image sequences. The meniscus tear assisted determination program includes a meniscus location detector and a meniscus tear predictor.

Abstract: A quantum dot oil-based ink is provided. The quantum dot oil-based ink includes a quantum dot material, a dispersing solvent, a viscosity modifier, and a surface tension modifying solution. The dispersing solvent includes a linear alkane having 6 to 14 carbon atoms. The viscosity modifier includes an aromatic hydrocarbon having 10 to 18 carbon atoms or a linear olefin having 16 to 20 carbon atoms. The surface tension modifying solution includes a hydrophobic polymer material and a nonpolar solvent.

Abstract: A method for forming a silicon film having a microcrystal structure is provided. The method includes following steps. A plasma-enhanced chemical vapor deposition system having a reaction chamber, a top electrode and a bottom electrode is provided. The top electrode and the bottom electrode are opposite and disposed in the reaction chamber. A substrate is disposed on the bottom electrode. A silane gas is applied into the reaction chamber. A silicon film having a microcrystal structure is formed by simultaneously irradiating the silane gas in the reaction chamber by a carbon dioxide laser and performing a plasma-enhanced chemical vapor deposition step.

Abstract: The present invention discloses a transparent solar cell system, which comprises: a light-permeable solar energy conversion device, balance units and conductive wires. The light-permeable solar energy conversion device has a transparent photovoltaic element, which is a PN semiconductor structure formed of two transparent conductive films. The transparent conductive films are respectively made of different oxides. The substrate of the transparent solar cell system is made of a common glass or a common plastic; therefore, the transparent solar cell system of the present invention is lightweight and environment-friendly. Further, the present invention has a simple fabrication process and a low fabrication cost; therefore, the present invention can be extensively applied to the windows and doors of buildings and vehicles and benefits the popularization of solar energy.

Abstract: The invention provides a method for manufacturing a gallium nitride-based III-V group compound semiconductor device, which comprises the following steps: forming a semiconductor stacked structure over a substrate, wherein the semiconductor stacked structure comprises an n-type semiconductor layer, an active layer, and a p-type semiconductor layer; etching the semiconductor stacked structure to expose a part of the n-type semiconductor layer; forming a first electrode on the n-type semiconductor layer, wherein the first electrode comprises an ohmic contact layer, a barrier layer, and a pad layer; performing an annealing process to lower the contact resistance between the first electrode and the n-type semiconductor layer and activate the p-type semiconductor layer at the same time; and forming a second electrode on the p-type semiconductor layer.

Abstract: The invention provides a method for manufacturing a gallium nitride-based III-V group compound semiconductor device, which comprises the following steps: forming a semiconductor stacked structure over a substrate, wherein the semiconductor stacked structure comprises an n-type semiconductor layer, an active layer, and a p-type semiconductor layer; etching the semiconductor stacked structure to expose a part of the n-type semiconductor layer; forming a first electrode on the n-type semiconductor layer, wherein the first electrode comprises an ohmic contact layer, a barrier layer, and a pad layer; performing an annealing process to lower the contact resistance between the first electrode and the n-type semiconductor layer and activate the p-type semiconductor layer at the same time; and forming a second electrode on the p-type semiconductor layer.

Abstract: A method for manufacturing III-nitride semiconductor devices is disclosed. The method employs oxidation and sulfurated treatment to reduce the specific contact resistance between metal and p-type III-nitride semiconductors. The method includes surface treatment of p-type III-nitride semiconductors using (NH4)2Sx solution to remove the native oxide from their surface; evaporating metal layer onto the surface-treated p-type III-nitride semiconductors; and then alloy processing the metals and the p-type III-nitride semiconductor with thermal alloy treatment. The method may further include a pre-oxidation step prior to the sulfurated treatment. In this way, ohmic contact can be formed between the metal layer and the p-type III-nitride semiconductors.

Abstract: The device concerns measuring the propagation and bending losses that take place in the individual mode of the multi-mode waveguide. The method applied is a new one comprising butt-couple and prism-couple together with phase-modulation method. Electrodes are made on the waveguide, and applied with voltage. The electro-optical effect is used to modulate the effective length of the waveguide in forming a Fabry-Perot etalon. From here, the contrast of the butt-couple's output and the loss can be measured. At the same time, as the prism-couple is able to separate the multiple modes individually, and measure the contrast and loss of each mode through every output mode which are then compared with the butt-couple, each mode's propagation and bending losses values of the multi-mode waveguide can be derived.