Abstract: A semiconductor device includes: first and second fin structures, disposed on a substrate, that respectively extend in parallel to an axis; a first gate feature that traverses the first fin structure to overlay a central portion of the first fin structure; a second gate feature that traverses the second fin structure to overlay a central portion of the second fin structure; a first spacer comprising: a first portion comprising two layers that respectively extend from sidewalls of the first gate feature toward opposite directions of the axis; and a second portion comprising two layers that respectively extend from sidewalls of the first portion of the first spacer toward the opposite directions of the axis; and a second spacer comprising two layers that respectively extend from sidewalls of the second gate feature toward the opposite directions of the axis.

Abstract: A card holding case includes a rear sheet having a first major area, and a front sheet having a second major area. The front sheet is attached to the rear sheet along a periphery such that the first and second major areas define a card receiving space for holding a plurality of cards. The front sheet is cut to form slits which are in spatial communication with the card receiving space. Each slit is configured such that once a card is inserted therethrough into the card receiving space, the card is urged toward the first major area. A bag including the card holding case is also disclosed.