Abstract: A device includes a redistribution line, and a polymer region molded over the redistribution line. The polymer region includes a first flat top surface. A conductive region is disposed in the polymer region and electrically coupled to the redistribution line. The conductive region includes a second flat top surface not higher than the first flat top surface.

Abstract: A first fin structure is disposed over a substrate. The first fin structure contains a semiconductor material. A gate dielectric layer is disposed over upper and side surfaces of the first fin structure. A gate electrode layer is formed over the gate dielectric layer. A second fin structure is disposed over the substrate. The second fin structure is physically separated from the first fin structure and contains a ferroelectric material. The second fin structure is electrically coupled to the gate electrode layer.

Abstract: A device incudes a substrate. A first fin and a second fin are over the substrate. An isolation structure is laterally between the first fin and the second fin. A gate structure crosses the first fin and the second fin. A first source/drain epitaxy structure is over the first fin. A second source/drain epitaxy structure is over the second fin. A spacer layer extends from a first sidewall of the first fin to a first sidewall of the second fin along a top surface of the isolation structure.

Abstract: The present disclosure describes a method for the formation of gate-all-around nano-sheet FETs with tunable performance. The method includes disposing a first and a second vertical structure with different widths over a substrate, where the first and the second vertical structures have a top portion comprising a multilayer nano-sheet stack with alternating first and second nano-sheet layers. The method also includes disposing a sacrificial gate structure over the top portion of the first and second vertical structures; depositing an isolation layer over the first and second vertical structures so that the isolation layer surrounds a sidewall of the sacrificial gate structure; etching the sacrificial gate structure to expose each multilayer nano-sheet stack from the first and second vertical structures; removing the second nano-sheet layers from each exposed multilayer nano-sheet stack to form suspended first nano-sheet layers; forming a metal gate structure to surround the suspended first nano-sheet layers.

Abstract: The present disclosure is directed to methods for the formation of high-voltage nano-sheet transistors and low-voltage gate-all-around transistors on a common substrate. The method includes forming a fin structure with first and second nano-sheet layers on the substrate. The method also includes forming a gate structure having a first dielectric and a first gate electrode on the fin structure and removing portions of the fin structure not covered by the gate structure. The method further includes partially etching exposed surfaces of the first nano-sheet layers to form recessed portions of the first nano-sheet layers in the fin structure and forming a spacer structure on the recessed portions. In addition, the method includes replacing the first gate electrode with a second dielectric and a second gate electrode, and forming an epitaxial structure abutting the fin structure.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a semiconductor fin disposed over a substrate, wherein the semiconductor fin includes a channel region and a source/drain region; a gate structure disposed over the channel region of the semiconductor fin, wherein the gate structure includes a gate spacer and a gate stack; a source/drain structure disposed over the source/drain region of the semiconductor fin; and a fin top hard mask vertically interposed between the gate spacer and the semiconductor fin, wherein the fin top hard mask includes a dielectric layer, and wherein a sidewall of the fin top hard mask directly contacts the gate stack, and another sidewall of the fin top hard mask directly contacts the source/drain structure.

Abstract: An USB electronic device having functionality of electric leakage protection is discloses. The USB electronic device comprises: a power interface, a power conversion circuit, a system controller, a circuit assembly, and a plurality of USB interfaces, of which the USB interfaces consists of at least one first USB interface and at least one second USB interface, and the first USB interface and the second USB interface both include an electrical terminal for supporting a power delivery (PD) communication protocol. In addition, there is an electric leakage preventing circuit provided in the USB electronic device. As such, in case of a power signal being transmitted between the first/second USB interface and an external electronic device by using the PD communication protocol, the electric leakage preventing circuit is enabled to prevent the power signal has a current leakage occurring between the first/second USB interface and the external electronic device.

Abstract: A display device is configured to determine a target location. The display device includes a waveguide element, a display panel and a processor. The waveguide element is configured to receive an image and reflect the image to an eyeball location. The display panel is located at one side of the waveguide element. The display panel has a plurality of pixel units. The display panel is located between the waveguide element and the target location. The processor is electrically connected to the display panel. The processor is configured to determine the pixel units in a blocking area of the display panel to be opaque. The blocking area of the display panel overlaps the target location. The display panel displays the pixel units in the blocking area as grayscale according to the processor.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a semiconductor fin disposed over a substrate, wherein the semiconductor fin includes a channel region and a source/drain region; a gate structure disposed over the channel region of the semiconductor fin, wherein the gate structure includes a gate spacer and a gate stack; a source/drain structure disposed over the source/drain region of the semiconductor fin; and a fin top hard mask vertically interposed between the gate spacer and the semiconductor fin, wherein the fin top hard mask includes a dielectric layer, and wherein a sidewall of the fin top hard mask directly contacts the gate stack, and another sidewall of the fin top hard mask directly contacts the source/drain structure.

Abstract: A memory device includes a resistor and a controller chip. The controller chip includes a first controller, a second controller, a first set of input/output (I/O) circuits, a second set of I/O circuits, a first calibration circuit, a second calibration circuit, and an arbitration circuit. The first controller transmits a first controller calibration request. The second controller transmits a second controller calibration request. The arbitration circuit instructs the first calibration circuit to perform a first controller calibration on the first set of I/O circuits using the resistor in response to the first controller calibration request, and instructs the second calibration circuit to perform a second controller calibration on the second set of I/O circuits using the resistor in response to the second controller calibration request. A first time interval of performing the first controller calibration and a second time interval of performing the second controller calibrations are non-overlapping.

Abstract: The present disclosure provides a method of forming a semiconductor device including an nFET structure and a pFET structure where each of the nFET and pFET structures include a semiconductor substrate and a gate trench. The method includes depositing an interfacial layer in each gate trench, depositing a first ferroelectric layer over the interfacial layer, removing the first ferroelectric layer from the nFET structure, depositing a metal oxide layer in each gate trench, depositing a second ferroelectric layer over the metal oxide layer, removing the second ferroelectric layer from the pFET structure, and depositing a gate electrode in each gate trench.

Abstract: Generating a solution keyword tag cloud is provided. The solution keyword tag cloud is generated for a product based on matching keywords identified in a question asking how to resolve an issue experienced by a user with the product with keyword tags included in a set of condition-solution trees corresponding to the product. In response to receiving an indication that a tried solution in the solution keyword tag cloud did not resolve the issue experienced by the user, the solution keyword tag cloud is graphically updated by moving the tried solution that failed to resolve the issue from a solution section of the solution keyword tag cloud to a condition section of the solution keyword tag cloud. The solution keyword tag cloud is presented in a graphical user interface display on a client device corresponding to the user.

Abstract: Enhancing a data query is provided. A knowledge base is searched for information corresponding to the data query. It is determined whether a query result is greater than a query result threshold level of information for the data query based on an identified query intent and keywords of the data query. In response to determining that the query result is not greater than the query result threshold level of information for the data query, a set of questions is sent to a personal digital agent of a client device that sent the data query for additional information based on the identified query intent and keywords. Analytic concepts answering the set of questions are received from analytic modules of the personal digital agent that are based on IoT-based personal data corresponding to a user of the client device. The data query is enhanced using the analytic concepts.

Abstract: A masking system and method for automatically masking sensitive user information on a webpage is provided. The method includes the steps of identifying a location of the first user data of the first type of sensitive user information on the webpage, updating an initial path to the first user data to account for changes to the initial path detected in response to repeated visits to the webpage, wherein the updated initial path to the first user data is stored as a stable path, locating a second user data associated with a second type of sensitive user information on the webpage, by accessing a central database containing path information to a location of the second user data on the webpage, and masking the first user data and the second user data on the webpage, using the stable path and the path information obtained from the central database.

Abstract: Generating a solution keyword tag cloud is provided. The solution keyword tag cloud is generated for a product based on matching keywords identified in a question asking how to resolve an issue experienced by a user with the product with keyword tags included in a set of condition-solution trees corresponding to the product. In response to receiving an indication that a tried solution in the solution keyword tag cloud did not resolve the issue experienced by the user, the solution keyword tag cloud is graphically updated by moving the tried solution that failed to resolve the issue from a solution section of the solution keyword tag cloud to a condition section of the solution keyword tag cloud. The solution keyword tag cloud is presented in a graphical user interface display on a client device corresponding to the user.

Abstract: Generating a solution keyword tag cloud is provided. Keywords are identified in a question asking how to resolve an issue experienced by a user with a product. The keywords identified in the question are matched with keyword tags included in a set of condition-solution trees corresponding to the product. The solution keyword tag cloud for the product is generated based on the matching of the keywords identified in the question with the keyword tags included in the set of condition-solution trees corresponding to the product. The solution keyword tag cloud is presented in a graphical user interface display on a client device corresponding to the user.

Abstract: Enhancing a data query is provided. A knowledge base is searched for information corresponding to the data query. It is determined whether a query result is greater than a query result threshold level of information for the data query based on an identified query intent and keywords of the data query. In response to determining that the query result is not greater than the query result threshold level of information for the data query, a set of questions is sent to a personal digital agent of a client device that sent the data query for additional information based on the identified query intent and keywords. Analytic concepts answering the set of questions are received from analytic modules of the personal digital agent that are based on IoT-based personal data corresponding to a user of the client device. The data query is enhanced using the analytic concepts.

Abstract: A masking system and method for automatically masking sensitive user information on a webpage is provided. The method includes the steps of identifying a location of the first user data of the first type of sensitive user information on the webpage, updating an initial path to the first user data to account for changes to the initial path detected in response to repeated visits to the webpage, wherein the updated initial path to the first user data is stored as a stable path, locating a second user data associated with a second type of sensitive user information on the webpage, by accessing a central database containing path information to a location of the second user data on the webpage, and masking the first user data and the second user data on the webpage, using the stable path and the path information obtained from the central database.

Abstract: A masking system and method for automatically masking sensitive user information on a webpage is provided. The method includes the steps of identifying a location of the first user data of the first type of sensitive user information on the webpage, updating an initial path to the first user data to account for changes to the initial path detected in response to repeated visits to the webpage, wherein the updated initial path to the first user data is stored as a stable path, locating a second user data associated with a second type of sensitive user information on the webpage, by accessing a central database containing path information to a location of the second user data on the webpage, and masking the first user data and the second user data on the webpage, using the stable path and the path information obtained from the central database.

Abstract: The present invention mainly discloses a storage device capable of controlling peripheral devices, which comprises a micro processing unit, a communication unit and a storage unit. Particularly, the storage unit is separated into a plurality of storage blocks and one file table block based on a file system, and parts of the storage blocks storing with device accessing files are further set to be a peripheral device controlling block. After connecting the storage device to a peripheral device and a host electronic device, the host electronic device can control the peripheral device through changing contents of the device accessing files. Thus, for the peripheral device manufactures, it just needs to develop driver software of this storage device and an application program for accessing the device accessing file, but does not need to develop corresponding peripheral device driver softwares compatible with various host operating systems, such as Windows and iOS.