Abstract: A two-phase immersion-type heat dissipation structure having acute-angle notched structures is provided. The two-phase immersion-type heat dissipation structure includes a heat dissipation substrate, and a plurality of fins. The heat dissipation substrate has a fin surface and a non-fin surface that face away from each other, the non-fin surface is configured to be in contact with a heat source immersed in a two-phase coolant, and the fin surface is connected with the fins. More than half of the fins are functional fins, and at least one side surface of each of the functional fins has first and second surfaces defined thereon and connected to each other. An angle between the first surface and the fin surface is from 80 degrees to 100 degrees, and an angle between the second surface and the fin surface is less than 75 degrees.

Abstract: A two-phase immersion-type heat dissipation structure having fins for facilitating bubble generation is provided. The two-phase immersion-type heat dissipation structure includes a heat dissipation substrate, and a plurality of fins. The heat dissipation substrate has a fin surface and a non-fin surface that face away from each other, the non-fin surface is configured to be in contact with a heat source immersed in a two-phase coolant, and the fin surface is connected with the plurality of fins. More than half of the fins are functional fins, and at least one side surface of each of the functional fins and the fin surface have an included angle therebetween that is from 80 degrees to 100 degrees. A center line average roughness (Ra) of the side surface is less than 3 ?m, and a ten-point average roughness (Rz) of the side surface is not less than 12 ?m.

Abstract: A two-phase immersion-cooling heat-dissipation composite structure is provided. The heat-dissipation composite structure includes a heat dissipation base, a plurality of high-thermal-conductivity fins, and at least one high-porosity solid structure. The heat dissipation base has a first surface and a second surface that face away from each other. The second surface of the heat dissipation base is in contact with a heating element immersed in a two-phase coolant. The first surface of the heat dissipation base is connected to the high-thermal-conductivity fins. The at least one high-porosity solid structure is located at the first surface of the heat dissipation base, and is connected and alternately arranged between side walls of two adjacent ones of the high-thermal-conductivity fins. Each of the high-porosity solid structure includes a plurality of closed holes and a plurality of open holes.

Abstract: A two-phase immersion-type heat dissipation structure having skived fin with high porosity is provided. The two-phase immersion-type heat dissipation structure having skived fin with high porosity includes a porous heat dissipation structure having a total porosity that is equal to or greater than 5%. The porous heat dissipation structure includes a porous substrate and a plurality of porous and skived fins. The porous substrate has a first surface and a second surface that face away from each other. The second surface of the porous substrate is configured to be in contact with a heating element that is immersed in a two-phase coolant. The plurality of porous and skived fins are integrally formed on the first surface of the porous substrate by skiving. A first porosity of the plurality of porous and skived fins is greater than a second porosity of the porous substrate.

Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate and a first gate electrode disposed on the substrate and located in a first region of the semiconductor device. The semiconductor device also includes a first sidewall structure covering the first gate electrode. The semiconductor device further includes a protective layer disposed between the first gate electrode and the first sidewall structure. In addition, the semiconductor device includes a second gate electrode disposed on the substrate and located in a second region of the semiconductor device. The semiconductor device also includes a second sidewall structure covering a lateral surface of the second gate electrode.

Abstract: A method for making a semiconductor structure includes: providing a substrate with a contact feature thereon; forming a dielectric layer on the substrate; etching the dielectric layer to form an interconnect opening exposing the contact feature; forming a metal layer on the dielectric layer and outside of the contact feature; and forming a graphene conductive structure on the metal layer, the graphene conductive structure filling the interconnect opening, being electrically connected to the contact feature, and having at least one graphene layer that extends in a direction substantially perpendicular to the substrate.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a semiconductor fin disposed over a substrate, wherein the semiconductor fin includes a channel region and a source/drain region; a gate structure disposed over the channel region of the semiconductor fin, wherein the gate structure includes a gate spacer and a gate stack; a source/drain structure disposed over the source/drain region of the semiconductor fin; and a fin top hard mask vertically interposed between the gate spacer and the semiconductor fin, wherein the fin top hard mask includes a dielectric layer, and wherein a sidewall of the fin top hard mask directly contacts the gate stack, and another sidewall of the fin top hard mask directly contacts the source/drain structure.

Abstract: A method of manufacturing a semiconductor device includes forming a first bonding layer over a substrate of a first wafer, the first wafer including a first semiconductor die and a second semiconductor die, performing a first dicing process to form two grooves that extend through the first bonding layer, the two grooves being disposed between the first semiconductor die and the second semiconductor die, performing a second dicing process to form a trench that extends through the first bonding layer and partially through the substrate of the first wafer, where the trench is disposed between the two grooves, and thinning a backside of the substrate of the first wafer until the first semiconductor die is singulated from the second semiconductor die.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a semiconductor fin disposed over a substrate, wherein the semiconductor fin includes a channel region and a source/drain region; a gate structure disposed over the channel region of the semiconductor fin, wherein the gate structure includes a gate spacer and a gate stack; a source/drain structure disposed over the source/drain region of the semiconductor fin; and a fin top hard mask vertically interposed between the gate spacer and the semiconductor fin, wherein the fin top hard mask includes a dielectric layer, and wherein a sidewall of the fin top hard mask directly contacts the gate stack, and another sidewall of the fin top hard mask directly contacts the source/drain structure.

Abstract: A probe pin cleaning pad including a foam layer, a cleaning layer, and a polishing layer is provided. The cleaning layer is disposed between the foam layer and the polishing layer. A cleaning method for a probe pin is also provided.

Abstract: A device, which is used to inspect the confinement boundary of a vertical spent nuclear fuel storage canister during operation, includes a vertical spent nuclear fuel storage unit, a lifting unit, a transferring unit and an inspection platform. The vertical spent nuclear fuel storage unit includes a vertical storage canister and a storage overpack. The vertical storage canister is configured for storing spent nuclear fuels, and the storage overpack is configured for storing the vertical storage canister. The lifting unit, connected with the vertical storage canister, is configured for lifting the vertical storage canister. The transferring unit, connected with the lifting unit, is configured for protecting the lifted vertical storage canister. The inspection platform, connected with the transferring unit and the storage overpack, is configured for creating more space with sufficient shielding for the usage of inspecting the confinement boundary of the vertical storage canister.

Abstract: A message transmission system, a receiving apparatus, a receiving method and a computer-readable recording medium thereof are provided. The message transmission system includes a transmitting apparatus, a receiving apparatus and a database. The transmitting apparatus transmits a broadcasting message, where the broadcasting message includes an identification code. The receiving apparatus forwards the identification code in response to receiving the broadcasting message. The database provides an intent content corresponding to the identification code without an application identification. The receiving apparatus presents a notification according to the intent content by an operation system (OS) without opening an application corresponding to the application identification in response to receiving the intent content. Accordingly, without installing an application for receiving a push message, the receiving apparatus still can receive the notification, and efficiency of push notification can be improved.

Abstract: A message transmission system, a receiving apparatus, a receiving method and a computer-readable recording medium thereof are provided. The message transmission system includes a transmitting apparatus, a receiving apparatus and a database. The transmitting apparatus transmits a broadcasting message, where the broadcasting message includes an identification code. The receiving apparatus forwards the identification code in response to receiving the broadcasting message. The database provides an intent content corresponding to the identification code without an application identification. The receiving apparatus presents a notification according to the intent content by an operation system (OS) without opening an application corresponding to the application identification in response to receiving the intent content. Accordingly, without installing an application for receiving a push message, the receiving apparatus still can receive the notification, and efficiency of push notification can be improved.

Abstract: An apparatus is provided to verify the integrity of the confinement boundary of a spent nuclear fuel dry storage canister in operation. An external-convection blocking device is used to temporarily isolate the dry storage system or the dry storage canister from the ambient environment to form an isolated space. A gas sampling-and-analyzing device is connected to the isolated space to measure the leak rate or concentration of helium or radioactive gases which release from the dry storage canister. After the leak rate or concentration of helium or radioactive gases is measured, the integrity of the confinement boundary of the dry storage canister can be verified to further enhance the safety of the spent nuclear fuel dry storage.

Abstract: An apparatus is provided to verify the integrity of the confinement boundary of a spent nuclear fuel dry storage canister in operation. An external-convection blocking device is used to temporarily isolate the dry storage system or the dry storage canister from the ambient environment to form an isolated space. A gas sampling-and-analyzing device is connected to the isolated space to measure the leak rate or concentration of helium or radioactive gases which release from the dry storage canister. After the leak rate or concentration of helium or radioactive gases is measured, the integrity of the confinement boundary of the dry storage canister can be verified to further enhance the safety of the spent nuclear fuel dry storage.