Patents by Inventor Ching-Wen Hung
Ching-Wen Hung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240106757Abstract: A method of wireless signal transmission management includes transmitting a plurality of data packets to tethering equipment from user equipment to tethering equipment, determining a size of each of the plurality of data packets by the tethering equipment, designating data packets of the plurality of data packets having a specific range of sizes as control signal packets by the tethering equipment, and prioritizing in transmitting the control signal packets to a cellular network by the tethering equipment.Type: ApplicationFiled: September 21, 2023Publication date: March 28, 2024Applicant: MEDIATEK INC.Inventors: Ching-Hao Lee, Yi-Lun Chen, Ho-Wen Pu, Yu-Yu Hung, Jun-Yi Li, Ting-Sheng Lo
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Patent number: 11934027Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.Type: GrantFiled: June 21, 2022Date of Patent: March 19, 2024Assignee: TDK TAIWAN CORP.Inventors: Chao-Chang Hu, Chih-Wei Weng, Chia-Che Wu, Chien-Yu Kao, Hsiao-Hsin Hu, He-Ling Chang, Chao-Hsi Wang, Chen-Hsien Fan, Che-Wei Chang, Mao-Gen Jian, Sung-Mao Tsai, Wei-Jhe Shen, Yung-Ping Yang, Sin-Hong Lin, Tzu-Yu Chang, Sin-Jhong Song, Shang-Yu Hsu, Meng-Ting Lin, Shih-Wei Hung, Yu-Huai Liao, Mao-Kuo Hsu, Hsueh-Ju Lu, Ching-Chieh Huang, Chih-Wen Chiang, Yu-Chiao Lo, Ying-Jen Wang, Shu-Shan Chen, Che-Hsiang Chiu
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Publication number: 20240090342Abstract: A method for fabricating semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a metal interconnection in the first IMD layer; forming a bottom electrode layer and a pinned layer on the first IMD layer; forming a sacrificial layer on the pinned layer; patterning the sacrificial layer, the pinned layer, and the bottom electrode layer to form a first magnetic tunneling junction (MTJ); forming a second IMD layer around the first MTJ; removing the sacrificial layer to form a recess; forming a barrier layer and a free layer in the recess; forming a top electrode layer on the free layer; and patterning the top electrode layer and the free layer to form a second MTJ.Type: ApplicationFiled: November 16, 2023Publication date: March 14, 2024Applicant: UNITED MICROELECTRONICS CORP.Inventors: Ching-Wen Hung, Ya-Sheng Feng
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Publication number: 20240090341Abstract: A method for fabricating semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a metal interconnection in the first IMD layer; forming a bottom electrode layer and a pinned layer on the first IMD layer; forming a sacrificial layer on the pinned layer; patterning the sacrificial layer, the pinned layer, and the bottom electrode layer to form a first magnetic tunneling junction (MTJ); forming a second IMD layer around the first MTJ; removing the sacrificial layer to form a recess; forming a barrier layer and a free layer in the recess; forming a top electrode layer on the free layer; and patterning the top electrode layer and the free layer to form a second MTJ.Type: ApplicationFiled: November 16, 2023Publication date: March 14, 2024Applicant: UNITED MICROELECTRONICS CORP.Inventors: Ching-Wen Hung, Ya-Sheng Feng
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Patent number: 11864469Abstract: A method for fabricating semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a metal interconnection in the first IMD layer; forming a bottom electrode layer and a pinned layer on the first IMD layer; forming a sacrificial layer on the pinned layer; patterning the sacrificial layer, the pinned layer, and the bottom electrode layer to form a first magnetic tunneling junction (MTJ); forming a second IMD layer around the first MTJ; removing the sacrificial layer to form a recess; forming a barrier layer and a free layer in the recess; forming a top electrode layer on the free layer; and patterning the top electrode layer and the free layer to form a second MTJ.Type: GrantFiled: September 5, 2022Date of Patent: January 2, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Ching-Wen Hung, Ya-Sheng Feng
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Publication number: 20230380295Abstract: A method for fabricating semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a metal interconnection in the first IMD layer; forming a bottom electrode layer and a pinned layer on the first IMD layer; forming a sacrificial layer on the pinned layer; patterning the sacrificial layer, the pinned layer, and the bottom electrode layer to form a first magnetic tunneling junction (MTJ); forming a second IMD layer around the first MTJ; and removing the sacrificial layer.Type: ApplicationFiled: August 2, 2023Publication date: November 23, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Ching-Wen Hung, Ya-Sheng Feng
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Publication number: 20230354716Abstract: A method for fabricating semiconductor device includes the steps of first providing a substrate having a magnetic tunnel junction (MTJ) region and an edge region, forming an first inter-metal dielectric (IMD) layer on the substrate, and then forming a first MTJ and a second MTJ on the first IMD layer, in which the first MTJ is disposed on the MTJ region while the second MTJ is disposed on the edge region. Next, a second IMD layer is formed on the first MTJ and the second MTJ.Type: ApplicationFiled: July 10, 2023Publication date: November 2, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Ching-Wen Hung, Yu-Ping Wang
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Publication number: 20230299166Abstract: A method for fabricating a nanowire transistor includes the steps of first forming a nanowire channel structure on a substrate, in which the nanowire channel structure includes first semiconductor layers and second semiconductor layers alternately disposed over one another. Next, a gate structure is formed on the nanowire channel structure and then a source/drain structure is formed adjacent to the gate structure, in which the source/drain structure is made of graphene.Type: ApplicationFiled: May 25, 2023Publication date: September 21, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Po-Kuang Hsieh, Shih-Hung Tsai, Ching-Wen Hung, Chun-Hsien Lin
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Patent number: 11765982Abstract: A method for fabricating semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a metal interconnection in the first IMD layer; forming a bottom electrode layer and a pinned layer on the first IMD layer; forming a sacrificial layer on the pinned layer; patterning the sacrificial layer, the pinned layer, and the bottom electrode layer to form a first magnetic tunneling junction (MTJ); forming a second IMD layer around the first MTJ; and removing the sacrificial layer.Type: GrantFiled: September 1, 2022Date of Patent: September 19, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Ching-Wen Hung, Ya-Sheng Feng
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Patent number: 11744160Abstract: A method for fabricating semiconductor device includes the steps of first providing a substrate having a magnetic tunnel junction (MTJ) region and an edge region, forming an first inter-metal dielectric (IMD) layer on the substrate, and then forming a first MTJ and a second MTJ on the first IMD layer, in which the first MTJ is disposed on the MTJ region while the second MTJ is disposed on the edge region. Next, a second IMD layer is formed on the first MTJ and the second MTJ.Type: GrantFiled: October 7, 2020Date of Patent: August 29, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Ching-Wen Hung, Yu-Ping Wang
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Patent number: 11705498Abstract: A method for fabricating a nanowire transistor includes the steps of first forming a nanowire channel structure on a substrate, in which the nanowire channel structure includes first semiconductor layers and second semiconductor layers alternately disposed over one another. Next, a gate structure is formed on the nanowire channel structure and then a source/drain structure is formed adjacent to the gate structure, in which the source/drain structure is made of graphene.Type: GrantFiled: February 26, 2021Date of Patent: July 18, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Po-Kuang Hsieh, Shih-Hung Tsai, Ching-Wen Hung, Chun-Hsien Lin
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Publication number: 20230090612Abstract: A method for fabricating a static random access memory (SRAM) includes the steps of: forming a gate structure on a substrate; forming an epitaxial layer adjacent to the gate structure; forming a first interlayer dielectric (ILD) layer around the gate structure; transforming the gate structure into a metal gate; forming a contact hole exposing the epitaxial layer, forming a barrier layer in the contact hole, forming a metal layer on the barrier layer, and then planarizing the metal layer and the barrier layer to form a contact plug. Preferably, a bottom portion of the barrier layer includes a titanium rich portion and a top portion of the barrier layer includes a nitrogen rich portion.Type: ApplicationFiled: November 21, 2022Publication date: March 23, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Ching-Wen Hung, Chun-Hsien Lin, Chien-Hung Chen
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Patent number: 11581191Abstract: A semiconductor device structure and a manufacturing method thereof are provided. The semiconductor device structure includes a semiconductor substrate having an active component region and a non-active component region, a first dielectric layer, a second dielectric layer, high resistivity metal segments, dummy stacked structures and a metal connection structure. The high resistivity metal segments are formed in the second dielectric layer and located in the non-active component region. The dummy stacked structures are located in the non-active component region, and at least one dummy stacked structure penetrates through the first dielectric layer and the second dielectric layer and is located between two adjacent high resistivity metal segments. The metal connection structure is disposed on the second dielectric layer, and the high resistivity metal segments are electrically connected to one another through the metal connection structure.Type: GrantFiled: April 27, 2021Date of Patent: February 14, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventor: Ching-Wen Hung
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Publication number: 20220416154Abstract: A method for fabricating semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a metal interconnection in the first IMD layer; forming a bottom electrode layer and a pinned layer on the first IMD layer; forming a sacrificial layer on the pinned layer; patterning the sacrificial layer, the pinned layer, and the bottom electrode layer to form a first magnetic tunneling junction (MTJ); forming a second IMD layer around the first MTJ; removing the sacrificial layer to form a recess; forming a barrier layer and a free layer in the recess; forming a top electrode layer on the free layer; and patterning the top electrode layer and the free layer to form a second MTJ.Type: ApplicationFiled: September 5, 2022Publication date: December 29, 2022Applicant: UNITED MICROELECTRONICS CORP.Inventors: Ching-Wen Hung, Ya-Sheng Feng
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Publication number: 20220416153Abstract: A method for fabricating semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a metal interconnection in the first IMD layer; forming a bottom electrode layer and a pinned layer on the first IMD layer; forming a sacrificial layer on the pinned layer; patterning the sacrificial layer, the pinned layer, and the bottom electrode layer to form a first magnetic tunneling junction (MTJ); forming a second IMD layer around the first MTJ; and removing the sacrificial layer.Type: ApplicationFiled: September 1, 2022Publication date: December 29, 2022Applicant: UNITED MICROELECTRONICS CORP.Inventors: Ching-Wen Hung, Ya-Sheng Feng
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Patent number: 11538813Abstract: A method for fabricating a static random access memory (SRAM) includes the steps of: forming a gate structure on a substrate; forming an epitaxial layer adjacent to the gate structure; forming a first interlayer dielectric (ILD) layer around the gate structure; transforming the gate structure into a metal gate; forming a contact hole exposing the epitaxial layer, forming a barrier layer in the contact hole, forming a metal layer on the barrier layer, and then planarizing the metal layer and the barrier layer to form a contact plug. Preferably, a bottom portion of the barrier layer includes a titanium rich portion and a top portion of the barrier layer includes a nitrogen rich portion.Type: GrantFiled: July 8, 2020Date of Patent: December 27, 2022Assignee: UNITED MICROELECTRONICS CORP.Inventors: Ching-Wen Hung, Chun-Hsien Lin, Chien-Hung Chen
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Patent number: 11488949Abstract: The present invention provides a method of generating dummy patterns and calibration kits, including steps of generating devices-under-test (DUTs) using a point of said chip window layer as reference point in a unit cell, generating calibration kits corresponding to the DUTs using the point as reference point in corresponding unit cells, generating DUT dummy patterns for each DUTs individually in the unit cell, copying the DUT dummy patterns in the unit cell to the corresponding calibration kits in the corresponding unit cells using the point as reference point, and merging all of the unit cell and corresponding unit cells into a final chip layout.Type: GrantFiled: June 7, 2021Date of Patent: November 1, 2022Assignee: UNITED MICROELECTRONICS CORP.Inventors: Kuo-Liang Yeh, Jinn-Horng Lai, Ching-Wen Hung, Chien-Tung Yue, Chun-Li Lin
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Patent number: 11469368Abstract: A method for fabricating semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a metal interconnection in the first IMD layer; forming a bottom electrode layer and a pinned layer on the first IMD layer; forming a sacrificial layer on the pinned layer; patterning the sacrificial layer, the pinned layer, and the bottom electrode layer to form a first magnetic tunneling junction (MTJ); forming a second IMD layer around the first MTJ; and removing the sacrificial layer.Type: GrantFiled: December 3, 2018Date of Patent: October 11, 2022Assignee: UNITED MICROELECTRONICS CORP.Inventors: Ching-Wen Hung, Ya-Sheng Feng
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Publication number: 20220238677Abstract: A method for fabricating a nanowire transistor includes the steps of first forming a nanowire channel structure on a substrate, in which the nanowire channel structure includes first semiconductor layers and second semiconductor layers alternately disposed over one another. Next, a gate structure is formed on the nanowire channel structure and then a source/drain structure is formed adjacent to the gate structure, in which the source/drain structure is made of graphene.Type: ApplicationFiled: February 26, 2021Publication date: July 28, 2022Inventors: Po-Kuang Hsieh, Shih-Hung Tsai, Ching-Wen Hung, Chun-Hsien Lin
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Publication number: 20210391339Abstract: A method for fabricating a static random access memory (SRAM) includes the steps of: forming a gate structure on a substrate; forming an epitaxial layer adjacent to the gate structure; forming a first interlayer dielectric (ILD) layer around the gate structure; transforming the gate structure into a metal gate; forming a contact hole exposing the epitaxial layer, forming a barrier layer in the contact hole, forming a metal layer on the barrier layer, and then planarizing the metal layer and the barrier layer to form a contact plug. Preferably, a bottom portion of the barrier layer includes a titanium rich portion and a top portion of the barrier layer includes a nitrogen rich portion.Type: ApplicationFiled: July 8, 2020Publication date: December 16, 2021Inventors: Ching-Wen Hung, Chun-Hsien Lin, Chien-Hung Chen