Abstract: Interconnect structure packages (e.g., through silicon vias (TSV) packages, through interlayer via (TIV) packages) may be pre-manufactured as opposed to forming TIVs directly on a carrier substrate during a manufacturing process for a semiconductor die package at backend packaging facility. The interconnect structure packages may be placed onto a carrier substrate during manufacturing of a semiconductor device package, and a semiconductor die package may be placed on the carrier substrate adjacent to the interconnect structure packages. A molding compound layer may be formed around and in between the interconnect structure packages and the semiconductor die package.

Abstract: A method for producing ?-aminobutyric acid includes cultivating, in a culture medium containing glutamic acid or a salt thereof, a probiotic composition including at least one lactic acid bacterial strain selected from the group consisting of Bifidobacterium breve CCFM1025 which is deposited at the Guangdong Microbial Culture Collection Center under an accession number GDMCC 60386, Lactobacillus acidophilus TYCA06, Lactobacillus plantarum LPL28, and Bifidobacterium longum subsp. infantis BLI-02 which are deposited at the China General Microbiological Culture Collection Center respectively under accession numbers CGMCC 15210, CGMCC 17954, and CGMCC 15212, Lactobacillus salivarius subsp. salicinius AP-32 which is deposited at the China Center for Type Culture Collection under an accession number CCTCC M 2011127, and combinations thereof.

Abstract: Various embodiments of the present disclosure are directed towards a semiconductor processing system including an overlay (OVL) shift measurement device. The OVL shift measurement device is configured to determine an OVL shift between a first wafer and a second wafer, where the second wafer overlies the first wafer. A photolithography device is configured to perform one or more photolithography processes on the second wafer. A controller is configured to perform an alignment process on the photolithography device according to the determined OVL shift. The photolithography device performs the one or more photolithography processes based on the OVL shift.

Abstract: An example electronic device includes a controller to determine a user touch detection by a power adaptor coupled to the electronic device to operate the electronic device in an AC power mode. The power adaptor may comprise a proximity sensor to detect a user touch for detachment of the power adaptor from the electronic device, and a control circuit to operate a configuration pin in a low output mode to signal user touch detection. The controller may initiate central processing unit (CPU) throttling to reduce power consumption by the electronic device. The controller may further stop CPU throttling in response to detecting that the power adaptor has been detached from the electronic device. Further, the controller may switch the electronic device to a DC power mode to operate using DC power supplied by a battery of the electronic device in response to power adaptor detachment.

Abstract: The invention provides a method for dynamically adjusting user interface, an electronic device and a computer-readable storage medium. The method includes: displaying a user interface, wherein the user interface partially displays a first block, and the first block includes at least one layer; monitoring a first moving direction of a first specific object; in response to determining that the first specific object moves toward the first block, moving at least one of the at least one layer in the first block toward a reference point in the user interface.

Abstract: The invention provides a method for dynamically adjusting user interface, an electronic device and a computer-readable storage medium. The method includes: displaying a user interface, wherein the user interface partially displays a first block, and the first block includes at least one layer; monitoring a first moving direction of a first specific object; in response to determining that the first specific object moves toward the first block, moving at least one of the at least one layer in the first block toward a reference point in the user interface.

Abstract: An electronic device, method for displaying an augmented reality scene and non-transitory computer-readable medium are provided in this disclosure. The electronic device includes a camera unit, a displayer, and a processor. The processor electrically connected to the camera unit and the displayer. The camera unit is configured for capturing a plurality of images of the physical environment. The displayer is configured for displaying an AR image. The processor is configured for stitching the plurality of images to generate an environment image; calculating an environment light and a reflection of the physical environment corresponding to the virtual object according to the environment image; analyzing direction of a lighting to calculate a shadow corresponding to the virtual object according to the environment image; and rendering the virtual object on the AR image according to the environment light, the reflection, and the shadow.

Abstract: An electronic device, method for displaying an augmented reality scene and non-transitory computer-readable medium are provided in this disclosure. The electronic device includes a camera unit, a displayer, and a processor. The processor electrically connected to the camera unit and the displayer. The camera unit is configured for capturing a plurality of images of the physical environment. The displayer is configured for displaying an AR image. The processor is configured for stitching the plurality of images to generate an environment image; calculating an environment light and a reflection of the physical environment corresponding to the virtual object according to the environment image; analyzing direction of a lighting to calculate a shadow corresponding to the virtual object according to the environment image; and rendering the virtual object on the AR image according to the environment light, the reflection, and the shadow.

Abstract: The present disclosure provides a virtual reality (VR) device, an image processing method, and a non-transitory computer readable storage medium. The VR device includes a display and a processor. The display is configured to display a VR object. The processor is configured to receive a control instruction, and acquire, on the VR object, an indicating region according to the control instruction; acquire, on the indicating region, a control region associated with a 2D image; acquire a 3D normal mapping data corresponding to the indicating region; calibrate a range of the control region according to a position information of the control instruction and the 3D normal mapping data; and edit, on the calibrated range, the control region according to the received control instruction.

Abstract: A fan-out semiconductor package includes a layer of adhesive covering a temporary carrier, a first redistribution layer disposed on the layer of adhesive, the first redistribution layer including a first metal layer having recessed areas. Metal pillars are plated to a first group of the recessed areas in the first metal layer. A semiconductor chip next is bonded to a second group of the recessed areas and a molding compound covers the semiconductor chip. The molding compound is then ground to expose tops of the metal pillars. A second redistribution layer including a second passivation layer adhering to the molding compound and a second metal layer covering openings exposing the tops of the metal pillars are then added.

Abstract: A manufacturing method of a package structure is provided. The method includes the following steps. A redistribution circuit layer is formed on a first carrier. A die is disposed on the redistribution circuit layer. An encapsulant is formed to encapsulate the die. The first carrier is removed to expose a surface of the redistribution circuit layer. A plurality of recesses are formed on the surface of the redistribution circuit layer. A plurality of conductive terminals are formed corresponding to the recesses on the redistribution circuit layer. Another manufacturing method of a package structure is also provided.

Abstract: A three-terminal nano-electro-mechanical field-effect transistor (NEMFET) includes a source electrode, a gate electrode, a drain electrode and a nanoelectromechanically suspended channel bridging the source electrode and the drain electrode. The nanoelectromechanically suspended channel includes a moveable nanowire and a dielectric coating on a surface of the nanowire facing the gate electrode. A thickness of a gap between the nanowire and the gate electrode is determined by a thickness of the dielectric coating.

Abstract: A three-terminal nano-electro-mechanical field-effect transistor (NEMFET) includes a source electrode, a gate electrode, a drain electrode and a nanoelectromechanically suspended channel bridging the source electrode and the drain electrode. The nanoelectromechanically suspended channel includes a moveable nanowire and a dielectric coating on a surface of the nanowire facing the gate electrode. A thickness of a gap between the nanowire and the gate electrode is determined by a thickness of the dielectric coating.