Patents by Inventor Ching-Yang Cheng

Ching-Yang Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating pixel structure
    Patent number: 8652899
    Abstract: The present invention provides a pixel structure including a substrate, a patterned electrode disposed on the substrate, a first insulating layer disposed on the patterned electrode, a common electrode disposed on the first insulating layer, a second insulating layer disposed on the common electrode, and a drain disposed on the second insulating layer. The first insulating layer has a first through hole, and the second insulating layer has a second through hole. The drain includes a first portion electrically connected to the patterned electrode via the first through hole and the second through hole, and a second portion extending onto the common electrode. The common electrode is coupled with the patterned electrode to form a first storage capacitor and is coupled with the second portion to form a second storage capacitor.
    Type: Grant
    Filed: August 14, 2013
    Date of Patent: February 18, 2014
    Assignee: AU Optronics Corp.
    Inventors: Chien-Chih Lee, Pei-Yi Shen, Ching-Yang Cheng, Shu-Ming Huang
  • METHOD OF FABRICATING PIXEL STRUCTURE
    Publication number: 20130323889
    Abstract: The present invention provides a pixel structure including a substrate, a patterned electrode disposed on the substrate, a first insulating layer disposed on the patterned electrode, a common electrode disposed on the first insulating layer, a second insulating layer disposed on the common electrode, and a drain disposed on the second insulating layer. The first insulating layer has a first through hole, and the second insulating layer has a second through hole. The drain includes a first portion electrically connected to the patterned electrode via the first through hole and the second through hole, and a second portion extending onto the common electrode. The common electrode is coupled with the patterned electrode to form a first storage capacitor and is coupled with the second portion to form a second storage capacitor.
    Type: Application
    Filed: August 14, 2013
    Publication date: December 5, 2013
    Applicant: AU Optronics Corp.
    Inventors: Chien-Chih Lee, Pei-Yi Shen, Ching-Yang Cheng, Shu-Ming Huang
  • Pixel structure
    Patent number: 8575612
    Abstract: The present invention provides a pixel structure including a substrate, a patterned electrode disposed on the substrate, a first insulating layer disposed on the patterned electrode, a common electrode disposed on the first insulating layer, a second insulating layer disposed on the common electrode, and a drain disposed on the second insulating layer. The first insulating layer has a first through hole, and the second insulating layer has a second through hole. The drain includes a first portion electrically connected to the patterned electrode via the first through hole and the second through hole, and a second portion extending onto the common electrode. The common electrode is coupled with the patterned electrode to form a first storage capacitor and is coupled with the second portion to form a second storage capacitor.
    Type: Grant
    Filed: May 2, 2012
    Date of Patent: November 5, 2013
    Assignee: AU Optronics Corp.
    Inventors: Chien-Chih Lee, Pei-Yi Shen, Ching-Yang Cheng, Shu-Ming Huang
  • PIXEL STRUCTURE AND METHOD OF FABRICATING THE SAME
    Publication number: 20130015449
    Abstract: The present invention provides a pixel structure including a substrate, a patterned electrode disposed on the substrate, a first insulating layer disposed on the patterned electrode, a common electrode disposed on the first insulating layer, a second insulating layer disposed on the common electrode, and a drain disposed on the second insulating layer. The first insulating layer has a first through hole, and the second insulating layer has a second through hole. The drain includes a first portion electrically connected to the patterned electrode via the first through hole and the second through hole, and a second portion extending onto the common electrode. The common electrode is coupled with the patterned electrode to form a first storage capacitor and is coupled with the second portion to form a second storage capacitor.
    Type: Application
    Filed: May 2, 2012
    Publication date: January 17, 2013
    Inventors: Chien-Chih Lee, Pei-Yi Shen, Ching-Yang Cheng, Shu-Ming Huang