Abstract: An organic semiconductor material is provided. The organic semiconductor material includes a compound represented by formula (1): wherein r and s each independently represent a positive integer of 1 to 20; n represents a positive integer of 2 to 10000; X1, X2 and X3 each independently represent O, S, Se, Te, NR, RCR, RSiR, RGeR or RSnR; Y1 and Y2 each independently represent H, F, Cl, CF3, haloalkyl, CN, R, OR, SR, COOR or COR; and Z1, Z2, Z3 and Z4 each independently represent H, F, Cl, CF3, haloalkyl, CN, R, OR, SR, COOR or COR, wherein R represents alkyl group.

Abstract: An organic semiconductor material is provided. The organic semiconductor material includes a compound represented by formula (1): wherein r and s each independently represent a positive integer of 1 to 20; n represents a positive integer of 2 to 10000; X1, X2 and X3 each independently represent O, S, Se, Te, NR, RCR, RSiR, RGeR or RSnR; Y1 and Y2 each independently represent H, F, Cl, CF3, haloalkyl, CN, R, OR, SR, COOR or COR; and Z1, Z2, Z3 and Z4 each independently represent H, F, Cl, CF3, haloalkyl, CN, R, OR, SR, COOR or COR, wherein R represents alkyl group.

Abstract: A pixel structure includes a thin film transistor device, an insulating layer disposed on the thin film transistor device, and a pixel electrode disposed on the insulating layer. The thin film transistor device includes a floating conductive pad disposed at one side of a semiconductor layer, and electrically connected to a source/drain electrode. The insulating layer has a first contact hole partially exposing the floating conductive pad. The pixel electrode is electrically connected to the floating conductive pad via the first contact hole.

Abstract: A pixel structure includes a thin film transistor device, an insulating layer disposed on the thin film transistor device, and a pixel electrode disposed on the insulating layer. The thin film transistor device includes a floating conductive pad disposed at one side of a semiconductor layer, and electrically connected to a source/drain electrode. The insulating layer has a first contact hole partially exposing the floating conductive pad. The pixel electrode is electrically connected to the floating conductive pad via the first contact hole.

Abstract: A simple and efficient method for transforming conformation of parts of chains in the amorphous phase in a conjugated polymer to extended conjugation length (termed as ? phase) is disclosed. The ? phase acts as a dopant and can be termed self-dopant. The generated self-dopant in the amorphous host allows an efficient energy transfer and charge trapping to occur and leads to more balanced charge fluxes and more efficient charge recombination. For example, a polyfluorene film was dipped into a mixed solvent/non-solvent, tetrahydrofuran/methanol in volume ratio of 1:1, to generate a ?-phase content up to 1.32%. A polymer light emitting diode with the dipped polyfluorene film as a light emitting layer therein provides a more pure and stable blue-emission (solely from the self-dopant) with CIE color coordinates x+y<0.3 and a performance of 3.85 cd A?1 (external quantum efficiency 3.33%) and 34326 cd m?2.

Abstract: A simple and efficient method for transforming conformation of parts of chains in the amorphous phase in a conjugated polymer to extended conjugation length (termed as ? phase) is disclosed. The ? phase acts as a dopant and can be termed self-dopant. The generated self-dopant in the amorphous host allows an efficient energy transfer and charge trapping to occur and leads to more balanced charge fluxes and more efficient charge recombination. For example, a polyfluorene film was dipped into a mixed solvent/non-solvent, tetrahydrofuran/methanol in volume ratio of 1:1, to generate a ?-phase content up to 1.32%. A polymer light emitting diode with the dipped polyfluorene film as a light emitting layer therein provides a more pure and stable blue-emission (solely from the self-dopant) with CIE color coordinates x+y<0.3 and a performance of 3.85 cd A?1 (external quantum efficiency 3.33%) and 34326 cd m?2.

Abstract: This invention provides new electroluminescent materials such as a conjugated polymer or a phosphorescent organometallic complex, which are grafted with multiple charge transport moieties with graded ionization potential or electrophilic property. The charge transport moieties can be all hole transport moieties or all electron transport moieties. The emissive electroluminescent materials covering the full visible range can be prepared. Organic light emitting diodes prepared with these materials can be used as indicators, light source and display for cellular phones, digital camera, pager, portable computer, personal data acquisition (PDA), watch, hand-held videogame, and billboard, etc.