Patents by Inventor Ching-Yeh Kuo

Ching-Yeh Kuo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and its manufacturing method
    Patent number: 7855383
    Abstract: A semiconductor device and its manufacturing method are disclosed. The nitrogen flow is gradually changed to form a semiconductor device with a gate or a source/drain having a nitrified gradient layer structure. Different extents of nitrification inside the nitrified gradient layer structure provide protection and buffering to prevent the undercut after etching due to different materials in the multilayer structure or the interface effect.
    Type: Grant
    Filed: November 7, 2007
    Date of Patent: December 21, 2010
    Assignee: ChungHwa Picture Tubes, Ltd.
    Inventors: Ching-Yeh Kuo, Tsung-Chi Cheng, Yu-Chou Lee, Yea-Chung Shih, Wen-Kuang Tsao, Hsiang-Hsien Chung, Hung-Yi Hsu, Jui-Chung Chang
  • Semiconductor device and its manufacturing method
    Publication number: 20080061327
    Abstract: A semiconductor device and its manufacturing method are disclosed. The nitrogen flow is gradually changed to form a semiconductor device with a gate or a source/drain having a nitrified gradient layer structure. Different extents of nitrification inside the nitrified gradient layer structure provide protection and buffering to prevent the undercut after etching due to different materials in the multilayer structure or the interface effect.
    Type: Application
    Filed: November 7, 2007
    Publication date: March 13, 2008
    Applicant: Chunghwa Picture Tubes., Ltd.
    Inventors: Ching-Yeh Kuo, Tsung-Chi Cheng, Yu-Chou Lee, Yea-Chung Shih, Wen-Kuang Tsao, Hsiang-Hsien Chung, Hung-Yi Hsu, Jui-Chung Chang
  • Semiconductor device and its manufacturing method
    Publication number: 20060197089
    Abstract: A semiconductor device and its manufacturing method are disclosed. The nitrogen flow is gradually changed to form a semiconductor device with a gate or a source/drain having a nitrified gradient layer structure. Different extents of nitrification inside the nitrified gradient layer structure provide protection and buffering to prevent the undercut after etching due to different materials in the multilayer structure or the interface effect.
    Type: Application
    Filed: March 3, 2005
    Publication date: September 7, 2006
    Applicant: Chunghwa Picture Tubes., Ltd.
    Inventors: Ching-Yeh Kuo, Tsung-Chi Cheng, Yu-Chou Lee, Yea-Chung Shih, Wen-Kuang Tsao, Hsiang-Hsien Chung, Hung-Yi Hsu, Jui-Chung Chang